発表論文及び国際学会Proceedingsリスト
目次
主要論文のcitation数データ (Clarivate Web of Science Core Coll.) (総引用 17,350回) (個人h-index 60、第1機関h-index 49)
(1) 本研究室が1stAuthorの論文
| Rank | Times Cited | Title, Journal |
|---|---|---|
| 1. | 1182 | S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura: "Spontaneous emission of localized excitons in InGaN single and multi-quantum well structures", Applied Physics Letters 69 (27), pp.4188-4190 (1996). |
| 2. | 612 | S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota: "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors", Nature Materials 5 (10), pp.810-816 (2006). |
| 3. | 446 | S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota: "Effective bandgap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures", Applied Physics Letters 73 (14), pp.2006-2008 (1998). |
| 4. | 404 | S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura: "Luminescences from localized states in InGaN epilayers", Applied Physics Letters 70 (21), pp.2822-2824 (1997). |
| 5. | 385 | S. Chichibu, K. Wada, and S. Nakamura: "Spatially-resolved cathodoluminescence spectra of InGaN quantum wells", Applied Physics Letters 71 (16), pp.2346-2348 (1997). |
| 6. | 248 | S. Chichibu, T. Sota, K. Wada, and S. Nakamura: "Exciton localization in InGaN quantum well devices", Journal of Vacuum Science and Technology B 16 (4), pp.2204-2214 (1998). |
| 7. | 226 | T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma: "Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO", Applied Physics Letters 82 (4), pp.532-534 (2003). |
| 8. | 172 | S. F. Chichibu, H. Marchand, M. S. Minski, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura: "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied Physics Letters 74 (10), pp.1460-1462 (1999). |
| 9. | 169 | S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura: "Optical properties of InGaN quantum wells", Materials Science and Engineering B 59, pp.298-306 (1999). |
| 10. | 163 | S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura: "Excitonic emissions from hexagonal GaN epitaxial layers", Journal of Applied Physics 79 (5), pp.2784-2786 (1996). |
| 11. | 141 | S. F. Chichibu, A. Uedono, T. Onuma, T. Sota, B. A. Haskell, S. P. DenBaars, J. S. Speck, and S. Nakamura: "Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques", Applied Physics Letters 86 (2), pp.021914 1-3 (2005). |
| 12. | 126 | S. Chichibu, T. Mizutani, K. Murakami, T. Shioda, T. Kurafuji, H. Nakanishi, S. Niki, P. J. Fons, and A. Yamada: "Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2", Journal of Applied Physics 83 (7), pp.3678-3689 (1998). |
| 13. | 119 | S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi: "The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN", Journal of Applied Physics 123 (16), pp.161413 1-13 (2018). |
| 14. | 109 | S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura: "Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers", Applied Physics Letters 68 (26), pp.3766-3768 (1996). |
| 15. | 106 | S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. Kawasaki: "Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects", Journal of Applied Physics 99 (9), pp.093505 1-6 (2006). |
| 16. | 103 | S. F. Chichibu, T. Sota, G. Cantwell, D. B. Eason, and C. W. Litton: "Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal", Journal of Applied Physics 93 (1), pp.756-758 (2003). |
(2)共同研究先が1stAuthorの論文
| Rank | Times Cited | Title, Journal |
|---|---|---|
| 1. | 1997 | A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki: "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO", Nature Materials 4 (1), pp.42-46 (2005). |
| 2. | 403 | A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki: "Blue light-emitting diode based on ZnO", Japanese Journal of Applied Physics 44, Part 2, pp.L643-L645 (2005). |
| 3. | 247 | A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura: "Biaxial strain dependence of exciton resonance energies in wurtzite GaN", Journal of Applied Physics 81 (1), pp.417-424 (1997). |
| 4. | 215 | J. S. Speck and S. F. Chichibu: "Nonpolar and Semipolar Group III Nitride-Based Materials", MRS Bulletin 34 (5), pp.304-309 (2009). |
| 5. | 192 | K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A.Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki: "Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates", Applied Physics Letters 97 (1), pp.013501 1-3 (2010). |
| 6. | 172 | T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura: "Quatum-confined Stark effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure", Japanese Journal of Applied Physics 38, Part 2 (8B), pp. L914-L916 (1999). |
| 7. | 169 | H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida: "Growth and Characterization of cubic GaN", Journal of Crystal Growth 178 (1-2), pp.113-133 (1997). |
| 8. | 147 | K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu: "Continuous-Wave Operation of m-plane InGaN Multiple Quantum Well Laser Diodes", Japanese Journal of Applied Physics 46, Part 2 (9), pp. L187-L189 (2007). |
| 9. | 114 | M.Yamaguchi, T.Yagi, T.Azuhata, T.Sota, K.Suzuki, S.Chichibu, and S.Nakamura: "Brillouin Scattering Study of Gallium Nitride : Elastic Stiffness Constants", Journal of Physics: Condensed Matter 9, pp.241-248 (1997). |
| 10. | 106 | A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. Chichibu, and H. Koinuma: "Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam", Journal of Applied Physics 93 (5), pp.2481-2485 (2003). |
(3) 参考(著書)
| Rank | Times Cited | Title, Journal |
|---|---|---|
| 1. | 532 | S. Nakamura and S. F. Chichibu: "Introduction to Nitride Semiconductor Blue Lasers and Light emitting Diodes", (Taylor and Francis, London and New York, 2000) ISBN 0-7484-0836-3. |