(b) Conferences

30. K. Shima, K. Furusawa, and S. F. Chichibu:

"Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process",
The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022) & The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), Nagoya Congress Center, Nagoya, Japan, Jan.11-13 (2022), No.S-I18, Hybrid Conference (Invited-oral).

29. S. F. Chichibu:

"Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO₂ films on a (0001) GaN template for optoelectronic applications",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO, Oxide-based Materials and Devices X, Session 5 Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth I San Francisco, USA, Feb.2-7, (2019), No.10919-10 (Invited-oral).

28. K. Shima, T. Kasuya, K. Furusawa, K. Kojima, and S. F. Chichibu:

"A comparative study on SiO₂/ZrO₂ and SiO₂/HfO₂ distributed Bragg reflectors for ZnO-based microcavities",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.ThO_7.6 (oral).

27. T. Kasuya, K. Shima, K. Kojima, K. Furusawa, and S. F. Chichibu:

"Fabrication of a ZnO-based microcavity using the reactive helicon-wave-excited-plasma sputtering method",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.ThO_7.3 (oral).

26. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:

"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping",
The 9th International Workshop on ZnO and Related Materials (IWZnO2016), Taipei, Taiwan, Oct.30-Nov.2, (2016), Session TD: Characterizations and Theories IV, No.TD1 (oral).

25. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:

"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping,
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), Nara, Japan, Mar. 28-31 (2016), No. Tu4 (oral).

24. S. F. Chichibu, S. Iwahashi, Y. Yamazaki, K. Kojima, K. Furusawa, and A. Uedono:

"Controlling the minority carrier lifetime of ZnO epitaxial thin films by transition metal doping",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-VII-1 (Invited-oral).

23. S. Iwahashi, K. Furusawa, Y. Yamazaki, K. Kojima, A. Uedono, and S. F. Chichibu:

"Homoepitaxy of ZnO films of reduced donor concentrations by the helicon- wave-excited-plasma sputtering epitaxy method using a ZnO target prepared by hydrothermal technique",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-V-3 (oral).

22. S. F. Chichibu:

"Helicon-wave-excited-plasma sputtering epitaxy of Zn-polar (Mg,Zn)O and (001) anatase / (100) rutile TiO₂ films for optoelectronic applications",
Materials Research Society, 2015 Spring Meeting, Symposium SS: Oxide thin films for advanced electrical, optical and magnetic applications, San Francisco, CA, USA, Apr.6-10 (2015) No. SS18.01 (Invited-oral).

21. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:

"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO₂ / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).

20, K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:

"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO₂ / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).

19, K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:

"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO₂ films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).

18. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:

"Local structure study of Mg_0.06Zn_0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).

17. S. F. Chichibu, A. N. Fouda T. Nakayama, A. Tanaka, and K. Hazu:

"Helicon-Wave-Excited-Plasma Sputtering Epitaxy of Nb-doped TiO₂ films on GaN",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.WeD2-7 (oral).

16. A. N. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu:

"Deposition of Anatase Nb-doped TiO₂ Thin Films on Glass Substrates by Helicon-Wave-Excited-Plasma Sputtering method",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.MoP48 (poster).

15. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:

"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).

14. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:

"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).

13. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:

"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008), No.AP24 (poster).

12. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:

"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).

11. S. Takahata, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:

"Helicon-wave-excited plasma sputtering and RF sputtering depositions of CuAlO₂ thin films",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.11 (oral).

10. S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:

"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).

9. S. Takahata, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:

"Helicon-wave-excited plasma sputtering deposition of CuAlO₂ thin films"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. MoC P39 (poster).

8. S. F. Chichibu, N. Shibata, A. N. Fouda, T. Iijima, and T. Koyama:

"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).

7. S. F. Chichibu, N. Shibata, and T. Koyama:

"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).

6. A. Murayama, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama and S. F. Chichibu:

"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).

5. N. Shibata, T. Ohmori, T. Koyama, T. Onuma, and S. F. Chichibu:

"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).

4. S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama and T. Onuma:

"Fabrication of p-CuGaS₂/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods"
The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), Denver, CO, USA Sep.27-Oct.1, (2004), Session I: Growth of Multinary Compounds No.11:20 (oral).

3. T. Koyama, T. Ohmori, N. Shibata, T. Onuma and S. F. Chichibu:

"Atomically flat ZnO and Mg_xZn_1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).

2. T. Koyama and S. F. Chichibu:

"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral & poster).

1. Y. Yamaki, K. Yamaya, H. Araya, H. Nakanishi and S. F. Chichibu:

"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.