III-V compound semiconductors (MOVPE growth, characterization, processing of GaAs and InP)
(a) Papers
| Year | Authors | Title | Journal | Vol., Page | Link |
|---|---|---|---|---|---|
| 1993-3 | S. Chichibu, A. Iwai, Y. Nakahara, S. Matsumoto, H. Higuchi, L. Wei and S. Tanigawa | Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine | Journal of Applied Physics | 73 pp.3880-3885 |
JAP (pdf) |
| 1993-2 | N. Yoshida, S. Chichibu, T. Akane, M. Totsuka, H. Uji, S. Matsumoto and H. Higuchi | Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient | Applied Physics Letters | 63 pp.3035-3037 |
APL (pdf) |
| 1993-1 | J. Ogata, A. Iwai, S. Chichibu, and S. Matsumoto | EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs | Japanese Journal of Applied Physics | 32 pp.5059-5061 |
JJAP (pdf) |
| 1992 | S. Chichibu, A. Iwai, S. Matsumoto and H. Higuchi | Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane | Applied Physics Letters | 60 pp.489-491 |
APL (pdf) |
| 1990 | S. Chichibu, M. Kushibe, K. Eguchi, M. Funemizu and Y. Ohba | High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition | Journal of Applied Physics | 68 pp.859-861 |
JAP (pdf) |
| 1989 | S. Chichibu, N. Ohkubo and S. Matsumoto | Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals | Japanese Journal of Applied Physics | 28 pp.1750-1755 |
JJAP (pdf) |
| 1988-2 | N. Ohkubo, S. Chichibu and S. Matsumoto | Effect of carbon concentration on the thermal conversion of liquid-encapsulated Czochralski semi-insulating GaAs | Applied Physics Letters | 53 pp.1054-1055 |
APL (pdf) |
| 1988-1 | S. Chichibu, N. Ohkubo and S. Matsumoto | Effects of controlled As pessure annealing on deep levels of liquid encapsulated Czochralski GaAs single cryatals | Journal of Applied Physics | 64 pp.3987-3993 |
JAP (pdf) |
| 1987 | S. Chichibu, S. Matsumoto and T. Obokata | Effect of carbon concentration on the electrical properties of liquid-encapsulated Czochralski semi-insulating GaAs | Journal of Applied Physics | 62 pp.4316-4318 |
JAP (pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
|---|---|---|---|---|---|
| 1990 | S. Chichibu, M. Kushibe, K. Eguchi, M. Funemizu and Y. Ohba | High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition | Journal of Applied Physics | 68 pp.859-861 |
JAP (pdf) |
| 1989 | S. Chichibu, N. Ohkubo and S. Matsumoto | Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals | Japanese Journal of Applied Physics | 28 pp.1750-1755 |
JJAP (pdf) |
| 1988-2 | N. Ohkubo, S. Chichibu and S. Matsumoto | Effect of carbon concentration on the thermal conversion of liquid-encapsulated Czochralski semi-insulating GaAs | Applied Physics Letters | 53 pp.1054-1055 |
APL (pdf) |
| 1988-1 | S. Chichibu, N. Ohkubo and S. Matsumoto | Effects of controlled As pessure annealing on deep levels of liquid encapsulated Czochralski GaAs single cryatals | Journal of Applied Physics | 64 pp.3987-3993 |
JAP (pdf) |
| 1987 | S. Chichibu, S. Matsumoto and T. Obokata | Effect of carbon concentration on the electrical properties of liquid-encapsulated Czochralski semi-insulating GaAs | Journal of Applied Physics | 62 pp.4316-4318 |
JAP (pdf) |
(b) International Conferences
- 4. M. Totsuka, N. Yoshida, S. Chichibu, T. Akane, H. Uji, H. Higuchi, and S. Matsumoto:
-
"Dry Sulfur Passivation of GaAs Surface Using ArF Excimer Laser with H2S",
Extended Abstracts of 1993 International Conference on Solid State Devices and Materials, Tsukuba, Japan, 1993,p.739. - 3. S. Chichibu, A. Iwai, S. Matsumoto, H. Higuchi, L. Wei and S. Tanigawa:
-
"Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine",
5th International Conference on Shallow Impurities in Semiconductors, Physics and Control of Impurities. Kobe, Japan August 5-8 1992: Materials Science Forum 117-118,pp.315-320(1993). - 2. S. Chichibu, N. Ohkubo and S. Matsumoto:
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"EL2 Deep Level Distribution Under Controlled As Pressure Annealing of LEC GaAs",
5th Conference on Semi-Insulating III-V Materials. Malmo, Sweden, June 1-3 1988. (Adam Hilger,Bristol and Philadelphia, 1988), Chap.1, p.25. - 1. S. Chichibu and S. Matsumoto:
-
"The Effect of As Pressure Controlled Annealing on Deep
Levels of LEC GaAs Crystals",
172nd Meeting of The Electrochemical Society,Inc. Honoruru,Hawaii Oct 18-23 1987: Journal of Electrochemical Society 134,p.576C(1987).