last update : February 10, 2012
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2012 -1 |
B.Gil, D.Felbacq, and S.F.Chichibu |
Exciton binding energies in chalcopyrite semiconductors |
Physical Review B |
85, pp.075205 1-5 |
PRB (pdf) |
| 2007 -1 |
秩父重英 |
カルコパイライト半導体のエピタキシャル成長 |
応用物理学会 多元系機能材料研究会
20周年記念誌「20年の歩み」 依頼原稿 |
pp.66-69 (2007年9月21日) |
|
| 2005 -1 |
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma |
Fabrication of p-CuGaS2/n-ZnO:Al
heterojunction light-emitting diode grown by metalorganic vapor phase
epitaxy and helicon-wave-excited-plasma sputtering methods |
Journal of Physics and Chemistry of Solids |
66, pp.1868-1871 |
JPCS (pdf) |
| 2004 -1 |
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma |
Greenish-white electroluminescence from
p-type CuGaS2 heterojunction diodes using n-type ZnO as an
electron injector |
Applied Physics Letters |
85, pp.4403-4405 |
APL (pdf) |
| 2003 -2 |
SF.Chichibu, Y.Harada, M.Sugiyama, and
H.Nakanishi |
Metalorganic vapor phase epitaxy of Cu(AlxGa1-x)(SySe1-y)2chalcopyrite
semiconductors and their band offsets |
Journal of Physics and Chemistry of Solids |
64, pp.1481-1489 |
JPCS (pdf) |
| 2003 -1 |
M.Sugiyama, R.Nakai, H.Nakanishi, and
SF.Chichibu |
Interface Fermi level pinning in a
Cu/p-CuGaS2 Schottly diode |
Journal of Physics and Chemistry of Solids |
64, pp.1787-1790 |
JPCS (pdf) |
| 2002 -3 |
M.Sugiyama, R.Nakai, H.Nakanishi, and
SF.Chichibu |
Fermi level pinning at the metal / p-type
CuGaS2 interfaces |
Journal of Applied Physics |
92, pp.7317-7315 |
JAP (pdf) |
| 2002 -2 |
Y.Harada, H.Nakanishi, and S.F.Chichibu |
Bandgap energy bowing and residual strain in CuAl(SxSe1-x)2
chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy. |
Journal of Applied Physics | 91, pp.5909-5914 |
JAP
(pdf) |
| 2002 -1 |
S.F.Chichibu, S.Shirakata, and H.Nakanishi | Metalorganic Vapor Phase Epitaxy of Cu(Al,Ga,In)(S,Se)2 Chalcopyrite Semiconductors | Institute of Pure and Applied Physics Books | 1, pp91-97 |
IPAP (pdf) |
| 2001 -3 |
Yoshiyuki Harada, Hisayuki Nakanishi, and Shigefusa F. Chichibu | Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy | Jounal of Crystal Growth | 336, pp.473-480 |
JCG
(pdf) |
| 2001 -2 |
Yoshiyuki Harada, Hisayuki Nakanishi, Shigefusa F. Chichibu |
Structural studies of Cu–III–VI2 chalcopyrite
semiconductor heteroepitaxial films grown by low-pressure metalorganic vapor phase epitaxy |
Journal of Applied Physics | 89, pp5406-5413 |
JAP
(pdf) |
| 2001 -1 |
Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu | Experimental Determination of Valence Band Discontinuities
at Cu(Al,Ga)(S,Se)2/GaAs(001) Heterointerfaces Using Ultraviolet Photoemission Spectroscopy |
Japanese Journal of Applied Physics |
40, pp.L428 - L430 |
JJAP
(pdf) |
| 2000 -3 |
Ravhi S.Kumar, A.Sekar, N.Victor Jaya, S.Natarajan and S.Chichibu | Structural studies of CuAlSe2 and CuAlS2 chalcopyrites at high pressures | Journal of Alloys and Compounds | 312, pp.4-8 |
JAC
(pdf) |
| 2000 -2 |
S.Shirakata, S.Chichibu, H.Miyake, and K.Sugiyama | Optical properties of CuGaSe2 and CuAlSe2
layers epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates |
Journal of Applied Physics | 87, pp.7294-7302 |
JAP
(pdf) |
| 2000 -1 |
S.Shirakata and S.Chichibu | Photoluminescence of CuGaS2 epitaxial layers grown by metalorganic vapor phase epitaxy | Journal of Applied Physics | 87, pp.3793-3799 |
JAP
(pdf) |
| 1997 -4 |
S.Shirakata, S.Chichibu, and S.Isomura | Room-Temperature Photoreflectance of CuAlxGa1-xSe2 Alloys | Japanese Journal of Applied Physics |
36, pp.7160-7161 |
JAP
(pdf) |
| 1997 -3 |
S.Shirakata, S.Chichibu, and S.Isomura | Crystal Growth and Optical Properties of CuAl(SxSe1-x)2 Alloys | Japanese Journal of Applied Physics |
36, pp.6645-6649 |
JJAP
(pdf) |
| 1997 -2 |
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, H.Miyake, and K.Sugiyama | Improved quality of CuGaSe2 and CuAlSe2
epilayers grown on CuGa0.96In0.04Se2 substrates |
Applied Physics Letters | 71, pp.533-535 |
APL
(pdf) |
| 1997 -1 |
S.Chichibu, S.Shirakata, S.Isomura, and H.Nakanishi | Visible and Ultraviolet Photoluminescence from Cu-III-VI2
Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy |
Japanese Journal of Applied Physics | 36, pp.1703-1714 |
JJAP
(pdf) |
| 1996 -10 |
S.Chichibu | Excitonic emissions from CuAlS2 and CuAlSe2 | OYO BUTSURI [in Japanese] | 65, pp.74-77 |
|
| 1996 -9 |
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, Y.Harada, S.Matsumoto, H.Higuchi, and T.Kariya | Preparation and characterization of CuAlxGa1-xSe2 alloy epilayers grown by low-pressure metalorganic vapor phase epitaxy |
Journal of Applied Physics | 80, pp.3338-3345 |
JAP
(pdf) |
| 1996 -8 |
M.Takahashi, A.Takahashi, R.Takei, N.Manba, H.Nakanishi, T.Irie, and S.Chichibu | Growth of ZnInGaS4 Single Crystals by Vertical
Bridgman Method |
Crystal Research and Technology | 31, pp.S73-76 |
|
| 1996 -7 |
S.Chichibu, M.Takahashi, N.Manba, A.Takahashi, R.Takei, H.Nakanishi, and T.Irie | X-Ray Photoelectron Spectroscopy Analysis of CdS/CdInGaS4 Heterointerface |
Crystal Research and Technology | 31, pp.S309-312 |
|
| 1996 -6 |
T.Wakiyama, S.Matsumoto, and S.Chichibu | Crystal Growth of AgGaS2 by the Vertical Bridgman Method | Crystal Research and Technology | 31, pp.S53-56 |
|
| 1996 -5 |
S.Shirakata, S.Chichibu, and S.Isomura | Photoluminescence of Heteroepitaxial CuGaS2 Layers | Crystal Research and Technology | 31, pp.S717-720 |
|
| 1996 -4 |
S.Chichibu, S.Shirakata, K.Haga, and H.Nakanishi | Low-Pressure Metalorganic Chemical Vapor Depiition of CuAlS2 Epilayers |
Crystal Research and Technology | 31, pp.S281-284 |
|
| 1996 -3 |
T.Azuhata, T.Terasako, K.Yoshida, T.Sota, K.Suzuki, and S.Chichibu | Lattice dynamics of CuAlS2 and CuAlSe2 | Physica B | 219/220, pp.496-498 |
PB
(pdf) |
| 1996 -2 |
A.Yamada, Y.Makita, S.Niki, A.Obara, P.Fons, H.Shibata, M.Kawai, S.Chichibu, and H.Nakanishi | Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy |
Journal of Applied Physics | 79, pp.4318-4322 |
JAP
(pdf) |
| 1996 -1 |
S.Shirakata and S.Chichibu | Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition | Journal of Applied Physics | 79, pp.2043-2054 |
JAP
(pdf) |
| 1995 -4 |
S.Chichibu, S.Shirakata, M.Uchida, Y.Harada, T.Wakiyama, S.Matsumoto, H.Higuchi, and S.Isomura | Heteroepitaxial Growth of CuGaS2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition |
Japanese Journal of Applied Physics | 34, pp.3991-3997 |
JJAP
(pdf) |
| 1995 -3 |
S.Chichibu, H.Nakanishi, and S.Shirakata | Ultraviolet photoluminescence from CuAlS2
heteroepitaxial layers grown by low-pressure metalorganic chemical vapor deposition |
Applied Physics Letters | 66, pp.3513-3515 |
APL
(pdf) |
| 1995 -2 |
S.Chichibu, S.Shirakata, S.Isomura, Y.Harada, M.Uchida, S.Matsumoto, and H.Higuchi | Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition | Journal of Applied Physics | 77, pp.1225-1232 |
JAP
(pdf) |
| 1995 -1 |
S.Chichibu and A.Kamata | Raman spectra of CuAlSe2 heteroepitaxial layers | Journal of Applied Physics | 77, pp.5470-5472 |
JAP
(pdf) |
| 1994 -4 |
S.Chichibu, Y.Harada, M.Uchida, T.Wakiyama, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi | Heteroepitaxy and characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical vapor deposition |
Journal of Applied Physics | 76, pp.3009-3015 |
JAP
(pdf) |
| 1994 -3 |
S.Chichibu, S.Shirakata, A.Ogawa, R.Sudo, M.Uchida, Y.Harada, T.Wakiyama, M.Shishikura, S.Matsumoto, and S.Isomura | Growth of Cu(AlxGa1-x)SSe penternary alloy crystals by iodine chemical vapor transport method | Journal of Crystal Growth | 140, pp.388-397 |
JCG
(abst) |
| 1994 -2 |
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura | Zn-related Donor-Acceptor Emission in CuAlSe2 Epitaxial Layers | Japanese Journal of Applied Physics | 33, pp.L345-L347 |
JJAP
(pdf) |
| 1994 -1 |
S.Chichibu, R.Sudo, N.Yoshida, Y.Harada, M.Uchida, S.Matsumoto, and H.Higuchi | Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe2/CuAlSe2 Heterostructure |
Japanese Journal of Applied Physics | 33, pp.L286-L289 |
JJAP
(pdf) |
| 1993 -10 |
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura | Photoreflectance Characterization of CuAlSe2
Heteroepitaxial Layer Grown by Metalorganic Chemical Vapor Deposition |
Japanese Journal of Applied Physics Supplment | 32-3, pp.494-496 |
JJAP (pdf) |
| 1993 -9 |
A.Ogawa, R.Sudo, A.Gupta, S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura | Preparation and Characterization of Cu(Al,Ga)(S,Se)2 Penternary Alloys |
Japanese Journal of Applied Physics Supplment | 32-3, pp.588-589 |
JJAP (pdf) |
| 1993 -8 |
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi, and S.Isomura | 2.51eV Donor-Acceptor Pair Photoluminescence from Zn-doped CuAlSe2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition |
Japanese Journal of Applied Physics Supplment | 32-3, pp.531-533 |
JJAP (pdf) |
| 1993 -7 |
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi, and S.Isomura | Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe2 Epitaxial Films |
Japanese Journal of Applied Physics Supplment | 32-3, pp.139-141 |
JJAP (pdf) |
| 1993 -6 |
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi | Excitonic photoluminescence in a CuAlSe2
chalcopyrite semiconductor grown by low-pressure metalorganic chemical vapor deposition |
Journal of Applied Physics | 74, pp.6446-6445 |
JAP
(pdf) |
| 1993 -5 |
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi | 2.51 eV photoluminescence from Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition | Applied Physics Letters | 62, pp.3306-3308 |
APL
(pdf) |
| 1993 -4 |
S.Chichibu, S.Shirakata, A.Iwai, S.Matsumoto, H.Higuchi and S.Isomura | CuAlSe2 chalcopyrite epitaxial layers grown by
low-pressure metalorganic chemical vapor deposition |
Journal of Crystal Growth | 131, pp.551-559 |
JCG
(abst) |
| 1993 -3 |
S.Shirakata, S.Chichibu, R.Sudo, A.Ogawa, S.Matsumoto and S.Isomura | Photoreflectance and Photoluminescence Studies of CuAlxGa1-xSe2 Alloys |
Japanese Journal of Applied Physics | 32, L1304-L1307 |
JJAP
(pdf) |
| 1993 -2 |
S.Chichibu, A.Iwai, S.Matsumoto and H.Higuchi | LP-MOCVD growth of CuAlSe2 epitaxial layers | Journal of Crystal Growth | 126, pp.635-642 |
JCG
(abst) |
| 1993 -1 |
S.Shirakata, S.Chichibu, S.Matsumoto and S.Isomura | Photoreflectance Study of CuAlSe2 Heteroepitaxial Layers | Japanese Journal of Applied Physics |
32, L167-L169 |
JJAP
(pdf) |
| 1991 -1 |
S.Chichibu, M.Shishikura, J.Ino and S.Matsumoto | Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transport | Journal of Applied Physics | 70, pp.1648-1655 |
JAP
(pdf) |
21. S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma: "Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods", The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), Denver, CO, USA Sep.27-Oct.1, (2004), Session I: Growth of Multinary Compounds No.11:20 (oral).
20. M.Sugiyama, R.Nakai, H.Nakanishi, and SF.Chichibu: "Interface Fermi level pinning in a Cu/p-CuGaS2 Schottly diode", The 13th International Conference on Ternary and Multinary Compounds (ICTMC-13), Paris, France Oct.14-16, (2002) O4-1 (poster)
19. SF.Chichibu, Y.Harada, M.Sugiyama, and H.Nakanishi: "Metalorganic vapor phase epitaxy of Cu(AlxGa1-x)(SySe1-y)2 chalcopyrite semiconductors and their band offsets", The 13th International Conference on Ternary and Multinary Compounds (ICTMC-13), Paris, France Oct.14-16, (2002) O4-1 (Invited-oral)
18. S.Chichibu, S.Shirakata, M.Sugiyama, and H.Nakanishi: "Ultraviolet Excitonic Photoluminescence from CuAlS2 Heteroepitaxial Films Grown by Metalorganic Vapor Phase Epitaxy", The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P40 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes
(Ohmsha Ltd., Tokyo, 1998) pp.596-599.
17. A.Bauknecht, U.Blieske, J.Bruns, T.Kampschulte, M.Saad, S.Chichibu, and M.Ch.Lux-Steiner: "Importance of the Interface Control for the Growth of High Quality CuGaSe2 Heteroepitaxial Layers using MOVPE", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. A10.3(oral); Institute of Physics Conference Series No.152 Section B P.269-272.16. S.Shirakata, S.Chichibu, H.Miyake, S.Isomura, H.Nakanishi, and K.Sugiyama: "Photoluminescence of CuGaSe2 and CuAlSe2 MOVPE Layers Grown on CuGa0.96In0.04Se2 Substrate", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. (poster) Institute of Physics Conference Series No.152 Section B: Thin Film Growth and Characterization PP.445-448
15. S.Chichibu, S.Shirakata, and H.Nakanishi: "Metalorganic vapor phase epitaxy of Cu-III-VI2 widegap chalcopyrite semiconductors", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. (Invited-oral) Institute of Physics Conference Series No.152 Section B: Thin Film Growth and Characterization PP.257-260.
14. T.Kampschulte, J.Albert, A.Bauknecht, U.Blieske, S.Chichibu, M.Saad, and M.Ch.Lux-Steiner: "Heteroepitaxial Growth of CuGaSe2 on GaAs", 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Berlin, Germany, Jun.8-11, 1997.
13. S.Chichibu, S.Shirakata, S.Isomura, and H.Nakanishi: "Visible and Ultraviolet Photoluminescence from Cu-III-VI2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy", International Conference on Solid State Devices and Materials, Yokohama, Japan, Aug.26-29, 1996, PD-7(6), Extended Abstract pp.733-735.
12. M.Takahashi, A.Takahashi, R.Takei, N.Manba, H.Nakanishi, T.Irie, and S.Chichibu: "Growth of ZnInGaS4 Single Crystals by Vertical Bridgman Method", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POII.42.
11. S.Chichibu, M.Takahashi, N.Manba, A.Takahashi, R.Takei, H.Nakanishi, and T.Irie: "X-Ray Photoelectron Spectroscopy Analysis of CdS/CdInGaS4 Heterointerface", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POI.82.
10. T.Wakiyama, S.Matsumoto, and S.Chichibu: "Crystal Growth of AgGaS2 by the Vertical Bridgman Method", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POI.43.
9. S.Shirakata, S.Chichibu, and S.Isomura: "Photoluminescence of Heteroepitaxial CuGaS2 Layers", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany Sep.18-22,1995. POI.13.
8. S.Chichibu, S.Shirakata, K.Haga, and H.Nakanishi: "Low-Pressure Metalorganic Chemical Vapor Depiition of CuAlS2 Epilayers", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany Sep.18-22,1995. 4A.1.
7. T.Azuhata, T.Terasako, K.Yoshida, T.Sota, K.Suzuki, and S.Chichibu: "Lattice dynamics of CuAlS2 and CuAlSe2", Phonons '95, Jul.24-28,1995. No.P41Th.6. A.Ogawa, R.Sudo, A.Gupta, S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura: "Preparation and Characterization of Cu(Al,Ga)(S,Se)2 Penternary Alloys", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993.?12aP44.p.315.
5. S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura: "Photoreflectance Characterization of CuAlSe2 Heteroepitaxial Layer Grown by Metalorganic Chemical Vapor Deposition", The 9th International Conference on Ternary and Multinary Compounds(ICTMC-9) Yokohama, Japan Aug.8-12 1993.12pA2.p.348.
4. S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi and S.Isomura: "2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe2 Epilayer Grown by LP-MOCVD", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993. 10pP18. p.129.
3. S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi and S.Isomura: "LP-MOCVD of CuAlSe2 Epitaxial Films", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993. 10aA3. p.91.
2. S.Shirakata, S.Isomura, and S.Chichibu: "Photoreflectance Characterization of Lattice Strain in Wide-Gap Cu-III-VI2 Epitaxial Layers", International Symposium-R of The Materials Research Society of Japan, Makuhari, Japan, May 22-23,1996. RP37. Proceedings of MRS-J Symposium R; Novel Semiconductor Materials, edited by H.Oyanagi, (1996), pp.113-116. Transactions of the Materials Research Society of Japan, 20,pp.782-785(1996).
1. S.Chichibu, K.Yamaya, H.Nakanishi, S.Shirakata, and S.Isomura: "Metalorganic Vapor Phase Epitaxy of CuAlxGa1-xSe2 Alloys", International Symposium-R of The Materials Research Society of Japan, Makuhari, Japan, May 22-23,1996. RP10, Proceedings of MRS-J Symposium R; Novel Semiconductor Materials, edited by H.Oyanagi, (1996), pp.62-65; Transactions of the Materials Research Society
of Japan, 20,pp.727-730(1996).
(c) Others
S.Chichibu : Powder Diffraction File Set.44 (for CuAlSe2) International Centre for Diffraction Data.