last update : August 29, 2014
(a) Papers| Year | Authors | Title | Journal | Vol., Page | Link |
| 2013 | M.Warasawa, Y.Watanabe, J.Ishida, Y.Murata, S.F.Chichibu, M.Sugiyama | Fabrication of Visible-Light-Transparent Solar Cells using p-type NiO Films by Low Oxygen Fraction Reactive RF Sputtering Deposition | Japanese Journal of Applied Physics | 52, pp.021102 1-4 |
JJAP (pdf) |
| 2012 | K.Hazu, T.Ohtomo, T.Nakayama, A.Tanaka, and S.F.Chichibu | Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN | Applied Physics Letters | 101, pp.072107 1-4 |
APL (pdf) |
| 2011-2 | A.Fouda, K.Hazu, T.Nakayama, A.Tanaka, and S.F.Chichibu | Helicon-wave-excited- plasma sputtering epitaxy of Nb-doped TiO2 films on GaN | Physica Status Solidi (c) | 8 (2), pp.534-536 |
pss(c) (pdf) |
| 2011-1 | A.Fouda, K.Hazu, M.Haemori, T.Nakayama, A.Tanaka, and S.F.Chichibub | Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering | Journal of Vacuum Science & Technology B | 29 (1), pp.011017 1-6 |
JVSTB (pdf) |
| 2010 | K.Hazu, A.Fouda, T.Nakayama, A.Tanaka, and S.F.Chichibu | Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-doped TiO2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method | Applied Physics Express | 3 (9), pp.pp.091102 1-3 |
APEX (pdf) |
| 2009 | T.Kawano, H.Morito, T.Yamada, T.Onuma, S.F.Chichibu, and H.Yamane | Synthesis, crystal structure and properties of iron pyroborate (Fe2B2O5) single crystals | Journal of Solid State Chemistry | 182, pp.2004-2009 |
JSSC (pdf) |
| 2006 |
S.Kamiyama, T.Maeda, Y.Nakamura, M.Iwaya, H.Amano, I.Akasaki,
H.Kinoshita, T.Furusho, M.Yoshimoto, T.Kimoto, J.Suda, A.Henry,
I.G.Ivanov, J.P.Bergman, B.Monemar, T.Onuma, and S.F.Chichibu |
Extremely high quantum efficiency of donor-acceptor-pair
emission in N-and-B-doped 6H-SiC |
Journal of Applied Physics |
99, pp.093108 1-4 |
JAP
(pdf) |
| 2002 -2 |
K.Takarabe, R.Teranishi, J.Oinuma, Y.Mori, T.Suemasu, S.Chichibu, and F.Hasegawa | Optical properties of b-FeSi2 under pressure | Physical Review B | 65, pp.165215 | PRB
(pdf) |
| 2002 -1 |
K.Takakura, N.Hiroi, T.Suemasu, S.F.Chichibu, F.Hasegawa | Investigation of direct and indirect band gaps of
[100]-oriented
nearly strain-free b-FeSi2 films grown by molecular-beam epitaxy |
Applied Physics Letters | 80,pp.556-558 | APL
(pdf) |
| 2001 | K.Takarabe, R.Teranishi, J.Oinuma, Y.Mori, T.Suemasu, S.Chichibu, and F.Hasegawa | Optical Absorption Spectra of b-FeSi2 under Pressure | Physica Status Solidi (b) | 223, pp.259-263 | pss(b)
Abstract (pdf) |
| 1995 | F.Ishihara, H.Uji, T.Kamimura, S.Matsumoto, H.Higuchi, and S.Chichibu | Use of Tetraethylgermane in ArF Excimer Laser Deposition of Amorphous Silicon-Germanium Films | Japanese Journal of Applied Physics | 34, pp.2229-2234 | JJAP (pdf) |
| 1993 |
S.Chichibu, T.Nii, T.Akane, and S.Matsumoto | Use of tertiarybutylarsine in ArF excimer laser doping of arsenic into silicon | Journal of Vacuum Science and Technology | B11, pp.341-343 | JVSTB (pdf) |
| 1992 | S.Chichibu, N.Yoshida, H.Higuchi, and S.Matsumoto | Chemical Vapor Deposition of Cu Film on SiO2 Using clopentadienylcoppertriethylphosphine | Japanese Journal of Applied Physics |
31, L1778-L1780 | JJAP (pdf) |
| 1988 | S.Chichibu, T.Harada and S.Matsumoto | Effect of Dopant Concentration on Oxidation-Induced Stacking Faults in Boron-Doped CZ Silicon | Japanese Journal of Applied Physics |
27, L1543-L1545 | JJAP (pdf) |
9. D. Kawade, K. Moriyama, F. Nakamura, S. F. Chichibu, and M. Sugiyama:
" Fabrication of visible-light-transparent solar cells composed of NiO/NixZn1-xO/ZnO heterostructures ",
The 19th International Conference on Ternary and Multinary Compounds (ICTMC-19), Niigata, Japan, Sep. 1-5, (2014), No.Thu-O-12B (oral).
8. K. Moriyama, D. Kawade, F. Nakamura, S. F. Chichibu, and M. Sugiyama:
" Fabrication of Visible-Light-Transparent Solar Cells Composed of NiO/ NixZn1-xO /ZnO heterojunctions",
Materials Research Society, 2014 Spring Meeting, Symposium E: Earth-Abundant Inorganic Solar-Energy Conversion, San Francisco, CA, USA, Apr.21-25 (2014) No. E15.17 (poster).
7. D. Kawade, T. Yamashita, J. Ishida, S. F. Chichibu, and M. Sugiyama:
" Control of carrier concentration for wide-bandgap p-type NiO thin film as a multifunctional window",
Materials Research Society, 2013 Spring Meeting, Symposium XX: Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies, San Francisco, CA, USA, Apr.1-5 (2013) No. XX3.20 (poster).
6, M. Warasawa, J. Ishida, S. F. Chichibu, and M. Sugiyama:
" Fabrication of a novel solar cell using p-type oxide semiconductors deposited using RF reactive sputtering method",
Materials Research Society, 2011 Fall Meeting, Symposium M: Oxide Semiconductors - Defects, Growth, and Device Fabrication Boston, MA, USA, Nov.28-Dec.2 (2011) No. M13-28 (poster).
5, K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).
4. J. Ishida, H. Kudo, Y. Murata, M. Sugiyama, and S. F. Chichibu:
"Fabrication of NiO related solar cells by RF sputtering method",
Materials Research Society 2011 Spring Meeting, Symposium D: Compound Semiconductors for Energy Applications and Environmental Sustainability, San Francisco, CA, USA, Apr.25-29, (2011), No.D16.15 (poster).
3. Y. Murata, M. Sugiyama, and S. F. Chichibu:
"Effects of air-annealing on structural and optical properties of p-type nickel oxide films deposited by the RF reactive sputtering method",
Materials Research Society, 2010 Fall Meeting, Session MM: Transparent Conducting Oxides and Applications, Boston, MA, USA, Nov.30-Dec.4 (2010) No. MM6.13 (poster).
2. S.Chichibu, N.Yoshida, H.Higuchi and S.Matsumoto
"CuCVD on SiO2 Using Cyclopentadienylcoppertriethyl- phosphine",
183rd Meeting of The Electrochemical Society,Inc., Honoruru, Hawaii May.16-21, 1993. No.305.
1. S.Chichibu, T.Nii, T.Akane and S.Matsumoto:
"Heavily Arsenic Doping into Si by ArF Excimer Laser Doping Using Tertiarybutylarsine (tBAs)",
5th International Conference on Shallow Impurities in Semiconductors, Physics and Control of Impurities.Kobe, Japan August 5-8 1992: Materials Science Forum 117-118,pp.243-248(1993).