3月14日にSixPoint Materials, Inc.の橋本氏をお招きして下記要領にて講演会を開催いたします。
日時： 平成28年3月14日（月）14時30分～
場所： 多元研科研S棟 2F セミナー室
講師： 橋本 忠朗（SixPoint Materials）
題目： GaN substrate by Near Equilibrium AmmonoThermal (NEAT) method
Abstract:
SixPoint Materials have been developing GaN substrates by near equlibrium ammonothermal (NEAT) method. With NEAT method, we can reduce cracks in bulk GaN crystals.
Currently, small-size (10x10mm) GaN substrates are fabricated for reseach of of high-power switching devices.
We will discuss various issues including microstructure, macro-defects, colorations, surface finishing in the seminar.
予約不要・無料
