Si and other materials and oxides (SiC, FeSi2, Fe2B2O5, defects, doping, metallization, nanoparticles, etc.)

(a) Papers

Year Authors Title Journal Vol., Page Link
2019-1 K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, and S. F. Chichibu Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy APL Materials 7
pp.071116 1-6
APL Mater.
(pdf)
2018-1 H. Imagawa, X. Wu, H. Itahara, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato Photocatalytic NO removal over calcium-bridged siloxenes under ultraviolet and visible light irradiation Dalton Transactions 47(20),
pp.7070-7076
Dalton Trans.
(pdf)
2017-4 M. Oishi, S. Shiomi, T. Yamamoto, T. Ueki, Y. Kai, S. F. Chichibu, A. Takatori, and K. Kojima High temperature degradation mechanism of a red phosphor, CaAlSiN3:Eu for solid-state lighting Journal of Applied Physics 122(11),
pp.113104 1-8
JAP
(pdf)
2017-3 H. Itahara, X. Wu, H. Imagawa, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato Photocatalytic activity of silicon-based nanoflakes for the decomposition of nitrogen monoxide Dalton Transactions 46(26),
pp.8643-8648
Dalton Trans.
(pdf)
2017-2 M. Matsubara, W. Stevenson, J. Yabuki, X. Zeng, H. Dong, K. Kojima, S. F. Chichibu, K. Tamada, A. Muramatsu, G. Ungar, and K. Kanie A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence Chem 2(6),
pp.860-876
Chem
(pdf)
2017-1 H. Nakai, M. Sugiyama, and S. F. Chichibu Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer Applied Physics Letters 110
pp.181102 1-5
APL
(pdf)
2016-1 M. Sugiyama, H. Nakai, G. Sugimoto, A. Yamada, and S. F. Chichibu Electrical properties of undoped and Li-doped NiO thin films deposited by using RF sputtering without intentional heating Japanese Journal of Applied Physics 55,
pp.088003 1-3
JJAP
(pdf)
2015-1 D. Kawade, K. Moriyama, F. Nakamura, S. F. Chichibu, and M. Sugiyama Fabrication of visible-light transparent solar cells composed of NiO/NixZn1-xO/ZnO heterostructures Physica Status Solidi (c) 12,
pp.785-788
pss(c)
(pdf)
2014-1 D. Kawade, S. F. Chichibu, and M. Sugiyama Experimental determination of band offsets of NiO-based thin film heterojunctions Journal of Applied Physics 116(16),
pp.163108 1-5
JAP
(pdf)
2013-1 M. Warasawa, Y. Watanabe, J. Ishida, Y. Murata, S. F. Chichibu, and M. Sugiyama Fabrication of Visible-Light-Transparent Solar Cells using p-type NiO Films by Low Oxygen Fraction Reactive RF Sputtering Deposition Japanese Journal of Applied Physics 52,
pp.021102 1-4
JJAP
(pdf)
2012-1 K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN Applied Physics Letters 101,
pp.072107 1-4
APL
(pdf)
2011-2 A. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu Helicon-wave-excited- plasma sputtering epitaxy of Nb-doped TiO2 films on GaN Physica Status Solidi (c) 8 (2),
pp.534-536
pss(c)
(pdf)
2011-1 A. Fouda, K. Hazu, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering Journal of Vacuum Science & Technology B 29 (1),
pp.011017 1-6
JVSTB
(pdf)
Year Authors Title Journal Vol., Page Link
2010 K. Hazu, A. Fouda, T. Nakayama, A. Tanaka, and S. F. Chichibu Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-doped TiO2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method Applied Physics Express 3 (9),
pp.091102 1-3
APEX
(pdf)
2009 T. Kawano, H. Morito, T. Yamada, T. Onuma, S. F. Chichibu, and H. Yamane Synthesis, crystal structure and characterization of iron pyroborate (Fe2B2O5) single crystals Journal of Solid State Chemistry 182,
pp.2004-2009
JSSC
(pdf)
2006 S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC Journal of Applied Physics 99,
pp.093108 1-4
JAP
(pdf)
2002-2 K. Takarabe, R. Teranishi, J. Oinuma, Y. Mori, T. Suemasu, S. Chichibu, and F. Hasegawa Optical properties of b-FeSi2 under pressure Physical Review B 65,
pp.165215
PRB
(pdf)
2002-1 K. Takakura, N. Hiroi, T. Suemasu, S. F. Chichibu, and F. Hasegawa Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free b-FeSi2 films grown by molecular-beam epitaxy Applied Physics Letters 80,
pp.556-558
APL
(pdf)
2001 K. Takarabe, R. Teranishi, J. Oinuma, Y. Mori, T. Suemasu, S. Chichibu, and F. Hasegawa Optical Absorption Spectra of b-FeSi2 under Pressure Physica Status Solidi (b) 223,
pp.259-263
pss(b)
(pdf)
Year Authors Title Journal Vol., Page Link
1995-1 F. Ishihara, H. Uji, T. Kamimura, S. Matsumoto, H. Higuchi, and S. Chichibu Use of Tetraethylgermane in ArF Excimer Laser Chemical Vapor Deposition of Amorphous Silicon-Germanium Films Japanese Journal of Applied Physics 34,
pp.2229-2234
JJAP
(pdf)
1993-1 S. Chichibu, T. Nii, T. Akane, and S. Matsumoto Use of tertiarybutylarsine in ArF excimer laser doping of arsenic into silicon Journal of Vacuum Science and Technology B11,
pp.341-343
JVSTB
(pdf)
1992-1 S. Chichibu, N. Yoshida, H. Higuchi, and S. Matsumoto Chemical Vapor Deposition of Cu Film on SiO2 Using Cyclopentadienylcoppertriethylphosphine Japanese Journal of Applied Physics 31,
L1778-L1780
JJAP
(pdf)
Year Authors Title Journal Vol., Page Link
1988-1 S. Chichibu, T. Harada, and S. Matsumoto Effect of Dopant Concentration on Oxidation-Induced Stacking Faults in Boron-Doped CZ Silicon Japanese Journal of Applied Physics 27,
L1543-L1545
JJAP
(pdf)

(b) Conferences

22. S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO, Oxide-based Materials and Devices X, Session 5 Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth I San Francisco, USA, Feb.2-7, (2019), No.10919-10 (Invited-oral).
21. W. Zehua, H. Nakai, M. Sugiyama, and S. F. Chichibu:
"UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial epilayer",
Materials Research Society, 2017 Fall Meeting, Symposium EM4: Wide- and Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA, Nov.26-Dec.1 (2017) No.EM04.06.07 (oral).
20. H. Itahara, H. Imagawa, X. Wu, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato:
"Photocatalytic Activity of Silicon-based Nanoflakes for the Decomposition of Nitrogen Monoxide",
The 34th Japan-Korea International Seminar on Ceramics, Session G: Nanoceramics, Hamamatsu, Japan, Nov.22-25 (2017), No.G-6 (oral).
19. H. Nakai, W. Zehua, I. Khatri, S. F. Chichibu, and M. Sugiyama:
"Electrical properties of undoped or Li-doped NiO/ZnO heterojunction for visible-light-transparent solar cells",
The 26th International Photovoltaic Science and Engineering Conference (PVSEC-26), Marina Bay Sands, Sands Expo and Convention Centre, Singapore, October 24-28 (2016), Session 3.4.3: III-V and other thin-film solar cells, No.3.4.3a (oral).
18. H. Itahara, X. Wu, Y. Yamazaki, H. Imagawa, S. Yin, K. Kojima, S. F. Chichibu, and T. Sato:
"Optical and photocatalytic properties of nanocomposites composed of CaxSi2 nano-flakes and nickel silicide particles",
Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-SILICIDE 2016), Fukuoka, Japan, July 16-18, (2016), No.17-P17 (poster).
17. A. Yamada, H. Nakai, K. Moriyama, K. Kumagai, S. F. Chichibu, and M. Sugiyama:
"RF Reactive-Sputtering Deposition of Li-Doped NiO Thin Films for Visible-Light- Transparent Solar Cells",
Materials Research Society, 2015 Fall Meeting, Symposium NN: Thin-Film and Nanostructure Solar Cell Materials and Devices for Next-Generation Photovoltaics, Boston, MA, USA, Nov.30-Dec.5 (2015) No. NN5.55 (poster).
16. H. Nakai, A. Ogasawara, R. Maeda, D. Kawade, S. F. Chichibu, and M. Sugiyama:
"Fabrication of visible-transparent solar cells composed of NiO/α-Zn-Sn-O heterojunctions",
Materials Research Society, 2015 Spring Meeting, Symposium SS: Oxide thin films for advanced electrical, optical and magnetic applications, San Francisco, CA, USA, Apr.6-10 (2015) No. SS10.46 (poster).
15. D. Kawade, K. Moriyama, F. Nakamura, S. F. Chichibu, and M. Sugiyama:
"Fabrication of visible-light-transparent solar cells composed of NiO/NixZn1-xO/ZnO heterostructures",
The 19th International Conference on Ternary and Multinary Compounds (ICTMC-19), Niigata, Japan, Sep. 1-5, (2014), No.Thu-O-12B (oral).
14. K. Moriyama, D. Kawade, F. Nakamura, S. F. Chichibu, and M. Sugiyama:
"Fabrication of Visible-Light-Transparent Solar Cells Composed of NiO/ NixZn1-xO /ZnO heterojunctions",
Materials Research Society, 2014 Spring Meeting, Symposium E: Earth-Abundant Inorganic Solar-Energy Conversion, San Francisco, CA, USA, Apr.21-25 (2014) No. E15.17 (poster).
13. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:
"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO2 / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).
12. D. Kawade, T. Yamashita, J. Ishida, S. F. Chichibu, and M. Sugiyama:
"Control of carrier concentration for wide-bandgap p-type NiO thin film as a multifunctional window",
Materials Research Society, 2013 Spring Meeting, Symposium XX: Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies, San Francisco, CA, USA, Apr.1-5 (2013) No. XX3.20 (poster).
11. K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan, Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).
10. M. Warasawa, J. Ishida, S. F. Chichibu, and M. Sugiyama:
"Fabrication of a novel solar cell using p-type oxide semiconductors deposited using RF reactive sputtering method",
Materials Research Society, 2011 Fall Meeting, Symposium M: Oxide Semiconductors - Defects, Growth, and Device Fabrication Boston, MA, USA, Nov.28-Dec.2 (2011) No. M13-28 (poster).
9. K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).
8. J. Ishida, H. Kudo, Y. Murata, M. Sugiyama, and S. F. Chichibu:
"Fabrication of NiO related solar cells by RF sputtering method",
Materials Research Society 2011 Spring Meeting, Symposium D: Compound Semiconductors for Energy Applications and Environmental Sustainability, San Francisco, CA, USA, Apr.25-29, (2011), No.D16.15 (poster).
7. Y. Murata, M. Sugiyama, and S. F. Chichibu:
"Effects of air-annealing on structural and optical properties of p-type nickel oxide films deposited by the RF reactive sputtering method",
Materials Research Society, 2010 Fall Meeting, Session MM: Transparent Conducting Oxides and Applications, Boston, MA, USA, Nov.30-Dec.4 (2010) No. MM6.13 (poster).
6. A. N. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Deposition of Anatase Nb-doped TiO2 Thin Films on Glass Substrates by Helicon-Wave-Excited-Plasma Sputtering method",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.MoP48 (poster).
5. S. F. Chichibu, A. N. Fouda T. Nakayama, A. Tanaka, and K. Hazu:
"Helicon-Wave-Excited-Plasma Sputtering Epitaxy of Nb-doped TiO2 films on GaN",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.WeD2-7 (oral).
4. S. Takahata, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Helicon-wave-excited plasma sputtering and RF sputtering depositions of CuAlO2 thin films",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.11 (oral).
3. S. Takahata, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Helicon- wave-excited plasma sputtering deposition of CuAlO2 thin films",
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. MoC P39 (poster).
2. S. Chichibu, N. Yoshida, H. Higuchi, and S. Matsumoto:
"CuCVD on SiO2 Using Cyclopentadienylcoppertriethyl- phosphine",
183rd Meeting of The Electrochemical Society,Inc., Honoruru, Hawaii May.16-21, 1993. No.305.
1. S. Chichibu, T. Nii, T. Akane, and S. Matsumoto:
"Heavily Arsenic Doping into Si by ArF Excimer Laser Doping Using Tertiarybutylarsine (tBAs)",
5th International Conference on Shallow Impurities in Semiconductors, Physics and Control of Impurities.Kobe, Japan August 5-8 1992: Materials Science Forum 117-118,pp.243-248(1993).