III-V compound semiconductors (MOVPE growth, characterization, processing of GaAs and InP)

(a) Papers

Year Authors Title Journal Vol., Page Link
1993-3 S. Chichibu, A. Iwai, Y. Nakahara, S. Matsumoto, H. Higuchi, L. Wei and S. Tanigawa Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine Journal of Applied Physics 73
pp.3880-3885
JAP
(pdf)
1993-2 N. Yoshida, S. Chichibu, T. Akane, M. Totsuka, H. Uji, S. Matsumoto and H. Higuchi Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient Applied Physics Letters 63
pp.3035-3037
APL
(pdf)
1993-1 J. Ogata, A. Iwai, S. Chichibu, and S. Matsumoto EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs Japanese Journal of Applied Physics 32
pp.5059-5061
JJAP
(pdf)
1992 S. Chichibu, A. Iwai, S. Matsumoto and H. Higuchi Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane Applied Physics Letters 60
pp.489-491
APL
(pdf)
1990 S. Chichibu, M. Kushibe, K. Eguchi, M. Funemizu and Y. Ohba High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition Journal of Applied Physics 68
pp.859-861
JAP
(pdf)
1989 S. Chichibu, N. Ohkubo and S. Matsumoto Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals Japanese Journal of Applied Physics 28
pp.1750-1755
JJAP
(pdf)
1988-2 N. Ohkubo, S. Chichibu and S. Matsumoto Effect of carbon concentration on the thermal conversion of liquid-encapsulated Czochralski semi-insulating GaAs Applied Physics Letters 53
pp.1054-1055
APL
(pdf)
1988-1 S. Chichibu, N. Ohkubo and S. Matsumoto Effects of controlled As pessure annealing on deep levels of liquid encapsulated Czochralski GaAs single cryatals Journal of Applied Physics 64
pp.3987-3993
JAP
(pdf)
1987 S. Chichibu, S. Matsumoto and T. Obokata Effect of carbon concentration on the electrical properties of liquid-encapsulated Czochralski semi-insulating GaAs Journal of Applied Physics 62
pp.4316-4318
JAP
(pdf)
Year Authors Title Journal Vol., Page Link
1990 S. Chichibu, M. Kushibe, K. Eguchi, M. Funemizu and Y. Ohba High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition Journal of Applied Physics 68
pp.859-861
JAP
(pdf)
1989 S. Chichibu, N. Ohkubo and S. Matsumoto Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals Japanese Journal of Applied Physics 28
pp.1750-1755
JJAP
(pdf)
1988-2 N. Ohkubo, S. Chichibu and S. Matsumoto Effect of carbon concentration on the thermal conversion of liquid-encapsulated Czochralski semi-insulating GaAs Applied Physics Letters 53
pp.1054-1055
APL
(pdf)
1988-1 S. Chichibu, N. Ohkubo and S. Matsumoto Effects of controlled As pessure annealing on deep levels of liquid encapsulated Czochralski GaAs single cryatals Journal of Applied Physics 64
pp.3987-3993
JAP
(pdf)
1987 S. Chichibu, S. Matsumoto and T. Obokata Effect of carbon concentration on the electrical properties of liquid-encapsulated Czochralski semi-insulating GaAs Journal of Applied Physics 62
pp.4316-4318
JAP
(pdf)

(b) International Conferences

4. M. Totsuka, N. Yoshida, S. Chichibu, T. Akane, H. Uji, H. Higuchi, and S. Matsumoto:
"Dry Sulfur Passivation of GaAs Surface Using ArF Excimer Laser with H2S",
Extended Abstracts of 1993 International Conference on Solid State Devices and Materials, Tsukuba, Japan, 1993,p.739.
3. S. Chichibu, A. Iwai, S. Matsumoto, H. Higuchi, L. Wei and S. Tanigawa:
"Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine",
5th International Conference on Shallow Impurities in Semiconductors, Physics and Control of Impurities. Kobe, Japan August 5-8 1992: Materials Science Forum 117-118,pp.315-320(1993).
2. S. Chichibu, N. Ohkubo and S. Matsumoto:
"EL2 Deep Level Distribution Under Controlled As Pressure Annealing of LEC GaAs",
5th Conference on Semi-Insulating III-V Materials. Malmo, Sweden, June 1-3 1988. (Adam Hilger,Bristol and Philadelphia, 1988), Chap.1, p.25.
1. S. Chichibu and S. Matsumoto:
"The Effect of As Pressure Controlled Annealing on Deep Levels of LEC GaAs Crystals",
172nd Meeting of The Electrochemical Society,Inc. Honoruru,Hawaii Oct 18-23 1987: Journal of Electrochemical Society 134,p.576C(1987).