Ⅱ-Ⅵ compound semiconductors (Mg,Zn)O, Zn(Se,Te), and CdS

(a) Papers

Year Authors Title Journal Vol., Page Link
2018-1 K. Koike, M. Yano, S. Gonda, A. Uedono, S. Ishibashi, K. Kojima, and S. F. Chichibu Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam Journal of Applied Physics 123
161562 pp.1-7
JAP
(pdf)
2017-1 M. Matsubara, W. Stevenson, J. Yabuki, X. Zeng, H. Dong, K. Kojima, S. F. Chichibu, K. Tamada, A. Muramatsu, G. Ungar, and K. Kanie A Low-Symmetry Cubic Mesophase of Dendronized CdS Nanoparticles and Their Structure-Dependent Photoluminescence Chem 2 (6),
pp.860-876
Chem
(pdf)
2016-1 S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping Applied Physics Letters 108
pp.021904 1-5
APL
(pdf)
2014-1 K. Furusawa, H. Nakasawa, Y. Ishikawa, and S. F. Chichibu Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique Japanese Journal of Applied Physics 53 (10),
pp.100301 1-4
JJAP
(pdf)
2012-3 S. -H. Jang and S. F. Chichibu Structural, elastic, and polarization paremeters and band structures of wurtzite ZnO and MgO Journal of Applied Physics 112
073503 pp.1-6
JAP
(pdf)
2012-2 A. Takagi, A. Nakamura, A. Yoshikaie, S. Yoshioka, S. Adachi, S. F. Chichibu, and T. Sota Signatures of Γ15 mixed-mode polaritons in polarized reflectance spectra of ZnO Journal of Physics: Condensed Matter 24
415801 pp.1-8
JPCM
(pdf)
2012-1 K. Hazu, S. F. Chichibu, S. Adachi, and T. Sota Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique Journal of Applied Physics 111
093522 pp.1-6
JAP
(pdf)
Year Authors Title Journal Vol., Page Link
2010-3 H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, Y. Nishimoto, D. Takamizu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0 ≤ x ≤ 0.12) Films on Zn-Polar ZnO Substrates Japanese Journal of Applied Physics 49
071104 pp.1-5
JJAP
(pdf)
2010-2 Y. Sawai, K. Hazu, and S. F. Chichibu Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method Journal of Applied Physics 108
063541 pp.1-8
JAP
(pdf)
2010-1 K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates Applied Physics Letters 97(1)
013501 pp.1-3
APL
(pdf)
2009-4 T. Yamada,T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima Local Structure Study of Mg0.06Zn0.94O Film by Polarized XAFS e-Journal of Surface Science and Nanotechnology 7
pp.596-600
ejssnt
(pdf)
2009-3 H. Amaike, K. Hazu, Y. Sawai, and S. F. Chichibu Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films Applied Physics Expres 2(10)
105503 pp.1-3
APEX
(pdf)
2009-2 S. Masaki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering Physica Status Solidi (c) 6(5)
pp.1109-1111
pss(c)
(pdf)
2009-1 S. Takahata, K. Saiki, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Fabrication of a n-type ZnO / p-type Cu-Al-O heterojunction diode by sputtering deposition methods Physica Status Solidi (c) 6(5)
pp.1105-1108
pss(c)
(pdf)
2008-3 Y. Nishimoto, K. Nakahara, D. Takamizu, A. Sasaki, K. Tamura, S. Akasaka, H. Yuji, T. Fujii, T. Tanabe, H. Takasu, A. Tsukazaki, A. Ohtomo, T. Onuma, S. F. Chichibu, and M. Kawasaki Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates Applied Physics Express 1(9)
091202 pp.1-3
APEX
(pdf)
2008-2 S. Masaki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering Physica Status Solidi (c) 5(9)
pp.3135-3137
pss(c)
(pdf)
2008-1 D. Takamizu, Y. Nishimoto, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Onuma, T. Tanabe, H. Takasu, M. Kawasaki, and S. F. Chichibu Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy Journal of Applied Physics 103
063502 pp.1-4
JAP
(pdf)
2007-2 T. Koyama, A. N. Fouda, N. Shibata, and S. F. Chichibu Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates Journal of Applied Physics 102
073505 pp.1-4
JAP
(pdf)
2007-1 M. Kubota, T. Onuma, A. Tsukazaki, A. Ohtomo, M. Kawasaki, T. Sota, and S. F. Chichibu Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy Applied Physics Letters 90
141903 pp.1-3
APL
(pdf)
2006-2 M. Sugiyama, A. Murayama, T. Imao, K. Saiki, H. Nakanishi, and S. F. Chichibu: Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films Physica Status Solidi (a) 203(11)
pp.2882-2886
pss(a)
(pdf)
2006-1 S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. Kawasaki Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects Journal of Applied Physics 99
pp.093505 1-6
JAP
(pdf)
2005-6 S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods Journal of Physics and Chemistry of Solids 66
pp.1868-1871
JPCS
(pdf)
2005-5 A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki Blue Light-Emitting Diode Based on ZnO Japanese Journal of Applied Physics 44
pp.L643-L645
JJAP
(pdf)
2005-4 K. Hazu, S. Adachi, T. Sota, and S. F. Chichibu Measurements of exciton-polariton dynamics in ZnO by using nonlinear spectroscopic techniques Journal of Luminescence 112
pp.7-10
JL
(pdf)
2005-3 S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Cantwell, C. W. Litton, T. Sota, and M. Kawasaki Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO Semiconductor Science and Technology 20
pp.S67-S77
SST
(pdf)
2005-2 S. Adachi, K. Hazu, T. Sota, S. Chichibu, G. Cantwell, D. C. Reynolds, and C. W. Litton Biexcitons and their dephasing processes in ZnO Physica Status Solidi (c) 2(2)
pp.890-895
pss(c)
(pdf)
2005-1 A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Nature Materials 4
pp.42-46
nmat
(pdf)
2004-11 T. Onuma, S. F. Chichibu, A. Uedono, Y. -Z. Yoo, T. Chikyow, T. Sota, M. Kawasaki, and H. Koinuma Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer Applied Physics Letters 85
pp.5586-5588
APL
(pdf)
2004-10 T. Koida, A. Uedono, A. Tsukazaki, T. Sota, M. Kawasaki, and S. F. Chichibu Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques Physica Status Solidi (a) 201(12)
pp.2841-2845
pss(a)
(pdf)
2004-9 S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector Applied Physics Letters 85
pp.4403-4405
APL
(pdf)
2004-8 T. Koyama, T. Ohmori, N. Shibata, T. Onuma, and S. F. Chichibu In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg0.06Zn0.94O films Journal of Vacuum Science & Technology B 22
pp.2220-2225
JVSTB
(pdf)
2004-7 K. Hazu, T. Sota, S. Adachi, SF. Chichibu, G. Cantwell, D. C. Reynolds and C. W. Litton Phonon scattering of excitons and biexcitons in ZnO Journal of Applied Physics 96
pp.1270-1272
JAP
(pdf)
2004-6 T. Koyama and SF. Chichibu Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO Journal of Applied Physics 95
pp.7856-7861
JAP
(pdf)
2004-5 K. Hazu, K. Torii, T. Sota, S. Adachi, SF. Chichibu, G. Cantwell, D. C. Reynolds and C. W. Litton Impact of the k-linear term on nonlinear optical response of the C-exciton manifold in ZnO Journal of Applied Physics 95
pp.5498-5501
JAP
(pdf)
2004-4 S. F. Chichibu and T. Sota Excitonic optical spectra of ZnO, a group-II oxide semiconductor 応用物理(研究紹介) 第73巻,第5号
pp.624-628
応用物理
(pdf)
2004-3 S. Adachi, K. Hazu, T. Sota, S. F. Chichibu, G. Cantwell, D. B. Eason, D. C. Reynolds, and C. W. Litton Biexciton formation and exciton-exciton correlation effects in bulk ZnO Semiconductor Science Technology 19
pp.S276-S278
SST
(abst)
2004-2 T. Koida, S. F. Chichibu, A. Uedono, T. Sota, A. Tsukazaki, and M. Kawasaki Radiative and nonradiative excitonic transitions in nonpolar (11-20) and polar(000-1) and (0001) ZnO epilayers Applied Physics Letters 84
pp.1079-1081
APL
(pdf)
2004-1 Y. -Z. Yoo, T. Sekiguchi, T. Chikyow, M. Kawasaki, T. Onuma, S. F. Chichibu, H. K. Song, and H. Koinuma V-defect of ZnO thin films grown on Si as an ultraviolet optical path Applied Physics Letters 84
pp.502-504
APL
(pdf)
2003-8 Y. -Z. Yoo, T. Chikyow, M. Kawasaki, T. Onuma, SF. Chichibu, and H. Koinuma Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111) Japanese Journal of Applied Physics 42
pp.7029-7032
JJAP
(pdf)
2003-7 T. Koyama, T. Onuma,and SF. Chichibu In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO Applied Physics Letters 83
pp.2973-2975
APL
(pdf)
2003-6 A. Tsukazaki, A. Ohtomo, S. Yoshida, M. Kawasaki, C. H. Chia, T. Makino, Y. Segawa, T. Koida, S. F. Chichibu, and H. Koinuma Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer Applied Physics Letters 83
pp.2784-2786
APL
(pdf)
2003-5 K. Hazu, T. Sota, K. Suzuki, S. Adachi, SF. Chichibu, G. Cantwell, D. B. Eason, D. C. Reynolds, and C. W. Litton Strong biexcitonic effects and exciton-exciton correlations in ZnO Physical Review B 68
033205
PRB
(pdf)
2003-4 T. Azuhata, M. Takesada, T. Yagi, A. Shikanai, SF. Chichibu, K. Torii, A. Nakamura, T. Sota, G. Cantwell, D. B. Eason, and C. W. Litton Brillouin scattering study of ZnO Journal of Applied Physics 94
pp.968-972
JAP
(pdf)
2003-3 A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, SF. Chichibu, and H. Koinuma Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam Journal of Applied Physics 93
pp.2481-2485
JAP
(pdf)
2003-2 T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO Applied Physics Letter 82
pp.532-534
APL
(pdf)
2003-1 SF. Chichibu, T. Sota, G. Cantwell, D. B. Eason, and C. W. Litton Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal Journal of Applied Physics 93
pp.756-758
JAP
(pdf)
2002-4 S. F. Chichibu, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, and S. Niki Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy Japanese Journal of Applied Physics 41
pp.L935-L937
JJAP
(pdf)
2002-3 S. F. Chichibu, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, and S. Niki Photoreflectance and Photoluminescence of Exciton-Polaritons in a ZnO Epilayer Grown on the a-Face Sapphire by Radical-Source Molecular-Beam-Epitaxy Physica Status Solidi (a) 192(1)
pp.171-176
pss(a)
(pdf)
2002-2 S. F. Chichibu, A. Tsukazaki, M. Kawasaki, K. Tamura, Y. Segawa, T. Sota,and H. Koinuma Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam-epitaxy Applied Physics Letters 80
pp.2860-2862
APL
(pdf)
2002-1 S. F. Chichibu, T. Yoshida, T. Onuma, and H. Nakanishi Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates Journal of Applied Physics 91
pp.874-877
JAP
(pdf)
2001-1 Y. -Z. Yoo, Y. Osaka, T. Fukumura, Z. Jin, M. Kawasaki, H. Koinuma, T. Chikyow, P. Ahmet, A. Setoguchi, and S. F. Chichibu High temperature growth of ZnS films on bare Si and transformation of ZnS to ZnO by thermal oxidation Applied Physics Letters 78
pp.616-618
APL
(pdf)
Year Authors Title Journal Vol., Page Link
1998-1 K. Yamaya, Y. Yamaki, H. Nakanishi, and S. Chichibu Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering Applied Physics Letters 72,
pp.235-237
APL
(pdf)
1997-1 A. Kamata, H. Yoshida, S. Chichibu, and H. Nakanishi Growth and doping characteristics of ZnSeTe epilayers by MOCVD Journal of Crystal Growth 170
pp.518-522
JCG
(pdf)

(b) International Conferences

40. K. Kojima and S. F. Chichibu:
"Relationship between internal quantum efficiency of radiation and photoluminescence lifetime in a ZnO single crystal",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.TuO_1.4 (oral).
39. S. F. Chichibu, K. Kojima, K. Koike, M. Yano, S. Gonda, S. Ishibashi, and A. Uedono:
"The origin and properties of intrinsic nonradiative recombination centers in the bulk and epitaxial ZnO",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.TuO_1.1 (oral).
38. K. Koike, W. Kuwagata, H. Mito, M. Yano, S. Gonda, A. Uedono, S. Ishibashi, K. Kojima, and S. F. Chichibu:
"Polarity-dependent defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam",
9th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31-Aug. 4 (2017), No.TuB1-3 (oral).
37. K. Kojima, T. Harada, A. Tsukazaki, and S. F. Chichibu:
"Quantification of absolute value of quantum efficiency of radiation in ZnO single crystals using an integrating sphere",
The 9th International Workshop on ZnO and Related Materials (IWZnO2016), Taipei, Taiwan, Oct.30-Nov.2, (2016), Session MA: Characterizations and Theories I, No.MA5 (oral).
36. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:
"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping",
The 9th International Workshop on ZnO and Related Materials (IWZnO2016), Taipei, Taiwan, Oct.30-Nov.2, (2016), Session TD: Characterizations and Theories IV, No.TD1 (oral).
35. K. Kanie, M. Matsubara, W. Stevenson, J. Yabuki, X. Zeng, H. Dong, K. Kojima, S. F. Chichibu, K. Tamada, A. Muramatsu, and G. Ungar:
"Structure-Dependent Photoluminescence Behavior of Liquid-Crystalline Self-Organized Organic-Inorganic Hybrid Dendrimer with a CdS Nano-Core ",
90th American Chemical Society Colloid & Surface Science Symposium, Harvard University, Cambridge, MA USA, June 5-8 (2016). No.143 (oral).
34. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:
"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping",
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), Nara, Japan, Mar. 28-31 (2016), No. Tu4 (oral).
33. S. F. Chichibu, S. Iwahashi, Y. Yamazaki, K. Kojima, K. Furusawa, and A. Uedono:
"Controlling the minority carrier lifetime of ZnO epitaxial thin films by transition metal doping",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-VII-1 (Invited-oral).
32. S. Iwahashi, K. Furusawa, Y. Yamazaki, K. Kojima, A. Uedono, and S. F. Chichibu:
"Homoepitaxy of ZnO films of reduced donor concentrations by the helicon-wave-excited-plasma sputtering epitaxy method using a ZnO target prepared by hydrothermal technique",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-V-3 (oral).
31. S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of Zn-polar (Mg,Zn)O and (001) anatase / (100) rutile TiO2 films for optoelectronic applications",
Materials Research Society, 2015 Spring Meeting, Symposium SS: Oxide thin films for advanced electrical, optical and magnetic applications, San Francisco, CA, USA, Apr.6-10 (2015) No. SS18.01 (Invited-oral).
30. S. F. Chichibu and A. Uedono:
"Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.17 (2013), Symposium H: Smart Materials Design for Ultimate Functional Materials: Functional Core Concept, No.17p-M4-5 (Invited-oral).
29. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:
"Local structure study of Mg0.06Zn0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).
28. K. Hazu, T. Sota, S. Adachi, and S. F. Chichibu:
"Valence band ordering in ZnO identified using the four-wave-mixing technique",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.P14 (poster).
27. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:
"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).
26. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:
"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method"
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).
25. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizsu, A. Sasaki, T. Tanabe, A. KamisawaH. Amaike, T. Onuma, S. F. Chichibu, M. Nakano, T. Fukumura, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"Molecular beam epitaxy of ZnO based heterostructures for advanced optoelectronic devices",
The 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, Sep. 21-24 (2008) (Invited-oral).
24. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),No.AP24 (poster).
23. K. Hazu, T. Sota, S. Adach, and S. F. Chichibu:
"Dephasing dynamics of excitons and biexcitons in ZnO",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),No.DP6 (poster).
22. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).
21. D. Takamizu, Y. Nishimoto, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, H. Takasu, M. Kawasaki, T. Onuma, and S. F. Chichibu:
"Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.M1 (Invited-oral).
20. K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, A. Sasaki, Y. Nishimoto, D. Takamizu, T. Fujii, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"Homoepitaxial MgZnO grown by molecular beam epitaxy toward ultraviolet light-emitting diodes"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008, Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-17 (Invited-oral).
19. H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008, Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-10 (oral).
18. S. Masaki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).
17. M. Kubota, A. Tsukazaki, T. Onuma, A. Ohtomo, T. Sota, M. Kawasaki, and S. F. Chichibu:
"Effects of High-Temperature-Annealed self-Buffer layer (HITAB) insertion on the photoluminescence properties of Mg0.15Zn0.85O alloy films grown by laser-assisted molecular-beam epitaxy"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Poster I, No.P137 (poster).
16. S. F. Chichibu, N. Shibata, A. N. Fouda, T. Iijima, and T. Koyama:
"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).
15. S. F. Chichibu, N. Shibata, and T. Koyama:
"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).
14. A. Murayama, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama and S. F. Chichibu:
"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).
13. A. Tsukazaki, A. Ohtomo, M. Kawasaki, M. Kubota, T. Onuma, S. F. Chichibu, M. Sumiya, S. Fuke, T. Kita, K. Ohtani, Y. Ohno, H. Ohno, T. Makino, Y. Segawa and H. Koinuma:
"Advances in ZnO thin film growth by laser molecular-beam epitaxy"
MRS 2005 Fall Meeting, Nov 28- Dec 2 (2005), Boston, USA, Proc p. 727 (Invited-Oral).
12. S. F. Chichibu et al.:
"Defect studies of ZnO by time-resolved photoluminescence and positron annihilation spectroscopy"
"Defect studies of ZnO by time-resolved photoluminescence and positron annihilation spectroscopy"
11. N. Shibata, T. Ohmori, T. Koyama, T. Onuma, and S. F. Chichibu:
"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).
10. S. F. Chichibu, A. Tsukazaki, T. Onuma, A. Ohtomo, T. Sota, A. Uedono, and M. Kawasaki:
"Record long room-temperature spontaneous emission lifetime in ZnO epilayers grown by laser-assisted molecular beam epitaxy on ScAlMgO4 substrates using high-temperature-annealed self-buffer and proper defect management",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. O6 (oral).
9. A. Tsukazki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki:
"A homoepitaxial ZnO p-i-n light emitting diode"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 9, No.11:00 (oral).
8. T. Koyama, T. Ohmori, N. Shibata, T. Onuma, and S. F. Chichibu:
"Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).
7. S. F. Chichibu, T. Onuma, A. Tsukazaki, M. Kubota, A. Ohtomo, A. Uedono, Y. Segawa, T. Sota, and M. Kawasaki:
"Record long room-temperature photoluminescence lifetime in ZnO epilayers grown by laser-assisted MBE using appropriate defect management"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-29 (poster).
6. T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, and H.Koinuma:
"Reduction in the nonradiative defect density in ZnO films grown on Si substrates by the use of ZnS epitaxial buffer layers"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 2, No.11:40 (oral)
5. A. Tsukazki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki:
"Electroluminescent ZnO p-i-n homostructural-junction"
11th International Workshop on Oxide Electronics (WOE11), Hakone, Japan, Oct, 3-5 (2004).
4. T. Koyama and S. F. Chichibu:
"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral&poster).
3. S. F. Chichibu, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, and S. Niki:
"Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam-epitaxy",
Fourth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2002), Cordoba, Spain, Mar.10-15, (2002), No.TuC6 (oral).
2. Y. Yamaki, K. Yamaya, H. Araya, H. Nakanishi, and S. Chichibu:
"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.
1. A. Kamata, H. Yoshida, S. Chichibu, and H. Nakanishi:
"Growth and Doping Characteristics of ZnSeTe Epilayers by MOCVD",
8th International Conference on Metal Organic Vapour Phase Epitaxy(ICMOVPE-8), Wales, England, Jun.9-13,1996. No. OOSP.7