Helicon-wave-excited-plasma sputtering methods

(a) Papers

Year Authors Title Journal Vol., Page Link
2016-1 S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping Applied Physics Letters 108
pp.021904 1-5
APL
(pdf)
2014-1 K. Furusawa, H. Nakasawa, Y. Ishikawa, and S. F. Chichibu Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique Japanese Journal of Applied Physics 53(10)
pp.100301 1-4
JJAP
(pdf)
2012-1 K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN Applied Physics Letters 101,
pp.072107 1-4
APL
(pdf)
2011-2 A. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu Helicon-wave-excited- plasma sputtering epitaxy of Nb-doped TiO2 films on GaN Physica Status Solidi (c) 8 (2),
pp.534-536
pss(c)
(pdf)
2011-1 A. Fouda, K. Hazu, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering Journal of Vacuum Science & Technology B 29 (1),
pp.011017 1-6
JVSTB
(pdf)
Year Authors Title Journal Vol., Page Link
2010-2 Y. Sawai, K. Hazu, and S. F. Chichibu Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method Journal of Applied Physics 108,
063541 1-8
JAP
(pdf)
2010-1 K. Hazu, A. Fouda T. Nakayama, A. Tanaka, and S. F. Chichibu Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-doped TiO2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method Applied Physics Express 3 (9),
pp.091102 1-3
APEX
(pdf)
2009-4 T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima Local Structural Study of Mg0.06Zn0.94O Film by Polarized XAFS e-Journal of Surface Science and Nanotechnology 7,
pp.596-600
ejssnt
(pdf)
2009-3 H. Amaike, K. Hazu, Y. Sawai, and S. F. Chichibu Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films Applied Physics Express 2 (10),
pp.105503 1-3
APEX
(pdf)
2009-2 S. Masaki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering Physica Status Solidi (c) 6,
1109-1111
pss(c)
(pdf)
2009-1 S. Takahata, K. Saiki, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Fabrication of a n-type ZnO / p-type Cu-Al-O heterojunction diode by sputtering deposition methods Physica Status Solidi (c) 6,
1105-1108
pss(c)
(pdf)
2008-2 S. Masaki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering Physica Status Solidi (c) 5 (9),
pp.3135-3137
pss(c)
(pdf)
2008-1 S. Takahata, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films Physica Status Solidi (c) 5 (9),
pp.3101-3103
pss(c)
(pdf)
2007-1 T. Koyama, A. N. Fouda, N. Shibata, and S. F. Chichibu Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates Journal of Applied Physics 102,
pp.073505 1-4
JAP
(pdf)
2006-2 M. Sugiyama, A. Murayama, T. Imao, K. Saiki, H. Nakanishi, and S. F. Chichibu Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films Physica Status Solidi (a) 203 (11),
pp.2882-2886
pss(a)
(pdf)
2006-1 S. F. Chichibu, T. Ohmori, N. Shibata, and T. Koyama Dielectric SiO2 /ZrO2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method Applied Physics Letters 88,
pp.161914 1-3
APL
(pdf)
2005-1 S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods Journal of Physics and Chemistry of Solids 66,
pp.1868-1871
JPCS
(pdf)
2004-3 S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, and T. Onuma Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector Applied Physics Letters 85,
pp.4403-4405
APL
(pdf)
2004-2 T. Koyama, T. Ohmori, N. Shibata, T. Onuma, and S. F. Chichibu In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg0.06Zn0.94O films Journal of Vacuum Science & Technology B 22,
pp.2220-2225
JVSTB
(pdf)
2004-1 T. Koyama, and S. F. Chichibu Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO Journal of Applied Physics 95,
pp.7856-7861
JAP
(pdf)
2003 T. Koyama, T. Onuma, and S. F. Chichibu In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO Applied Physics Letters 83,
pp.2973-2975
APL
(pdf)
2002 S. F. Chichibu, T. Yoshida, T. Onuma, and H. Nakanishi Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates Journal of Applied Physics 91,
pp.874-877
JAP
(pdf)
Year Authors Title Journal Vol., Page Link
1998 K. Yamaya, Y. Yamaki, H. Nakanishi, and S. F. Chichibu Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering Applied Physics Letters 72,
pp.235-237
APL
(pdf)

(b) Conferences

29. S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO, Oxide-based Materials and Devices X, Session 5 Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth I San Francisco, USA, Feb.2-7, (2019), No.10919-10 (Invited-oral).
28. K. Shima, T. Kasuya, K. Furusawa, K. Kojima, and S. F. Chichibu:
"A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.ThO_7.6 (oral).
27. T. Kasuya, K. Shima, K. Kojima, K. Furusawa, and S. F. Chichibu:
"Fabrication of a ZnO-based microcavity using the reactive helicon-wave-excited-plasma sputtering method",
The 10th International Workshop on ZnO and Other Oxide Semiconductors (IWZnO2018), Warsaw, Poland, Sep.11-14, (2018), No.ThO_7.3 (oral).
26. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:
"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping",
The 9th International Workshop on ZnO and Related Materials (IWZnO2016), Taipei, Taiwan, Oct.30-Nov.2, (2016), Session TD: Characterizations and Theories IV, No.TD1 (oral).
25. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono:
"Carrier Lifetime Control of Nearly Dislocation-free ZnO Homoepitaxial Films by 3d Transition-metal Doping,
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), Nara, Japan, Mar. 28-31 (2016), No. Tu4 (oral).
24. S. F. Chichibu, S. Iwahashi, Y. Yamazaki, K. Kojima, K. Furusawa, and A. Uedono:
"Controlling the minority carrier lifetime of ZnO epitaxial thin films by transition metal doping",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-VII-1 (Invited-oral).
23. S. Iwahashi, K. Furusawa, Y. Yamazaki, K. Kojima, A. Uedono, and S. F. Chichibu:
"Homoepitaxy of ZnO films of reduced donor concentrations by the helicon- wave-excited-plasma sputtering epitaxy method using a ZnO target prepared by hydrothermal technique",
European Materials Research Society, 2015 Spring Meeting, Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films V, Grand Palais, Lille, France, May.11-15 (2015) No. N-V-3 (oral).
22. S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of Zn-polar (Mg,Zn)O and (001) anatase / (100) rutile TiO2 films for optoelectronic applications",
Materials Research Society, 2015 Spring Meeting, Symposium SS: Oxide thin films for advanced electrical, optical and magnetic applications, San Francisco, CA, USA, Apr.6-10 (2015) No. SS18.01 (Invited-oral).
21. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:
"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO2 / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).
20, K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).
19, K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).
18. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:
"Local structure study of Mg0.06Zn0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).
17. S. F. Chichibu, A. N. Fouda T. Nakayama, A. Tanaka, and K. Hazu:
"Helicon-Wave-Excited-Plasma Sputtering Epitaxy of Nb-doped TiO2 films on GaN",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.WeD2-7 (oral).
16. A. N. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Deposition of Anatase Nb-doped TiO2 Thin Films on Glass Substrates by Helicon-Wave-Excited-Plasma Sputtering method",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.MoP48 (poster).
15. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:
"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).
14. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:
"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).
13. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008), No.AP24 (poster).
12. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).
11. S. Takahata, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Helicon-wave-excited plasma sputtering and RF sputtering depositions of CuAlO2 thin films",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.11 (oral).
10. S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:
"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).
9. S. Takahata, T. Imao, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. MoC P39 (poster).
8. S. F. Chichibu, N. Shibata, A. N. Fouda, T. Iijima, and T. Koyama:
"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).
7. S. F. Chichibu, N. Shibata, and T. Koyama:
"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).
6. A. Murayama, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama and S. F. Chichibu:
"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).
5. N. Shibata, T. Ohmori, T. Koyama, T. Onuma, and S. F. Chichibu:
"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).
4. S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama and T. Onuma:
"Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods"
The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), Denver, CO, USA Sep.27-Oct.1, (2004), Session I: Growth of Multinary Compounds No.11:20 (oral).
3. T. Koyama, T. Ohmori, N. Shibata, T. Onuma and S. F. Chichibu:
"Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).
2. T. Koyama and S. F. Chichibu:
"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral & poster).
1. Y. Yamaki, K. Yamaya, H. Araya, H. Nakanishi and S. F. Chichibu:
"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.