Growth and characterizatoin of (Al,B,Ga,In)N nitride semiconductors

(a) Papers

Year Authors Title Journal Vol., Page Link
2019-7 H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda Theoretical Formulation of Experimentally Observed Quantum Efficiency of Radiation in Semiconducting Crystal Physical Review Applied 12
pp.014002 1-12
PRApplied
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2019-6 Y. Nagasawa, K. Kojima, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet light-emitting diodes grown on an AlN template having macrosteps Applied Physics Express 12
pp.064009 1-6
APEX
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2019-5 A. Uedono, H. Iguchi, T. Narita, K. Kataoka, W. Egger,T. Koschine, C. Hugenschmidt, M. Dickmann, K. Shima, K. Kojima, S. F. Chichibu, and S. Ishibashi Annealing Behavior of Vacancy-Type Defects in Mg- and H-Implanted GaN Studied Using Monoenergetic Positron Beams physica status solidi (b) 256
pp.1900104 1-12
pss(b)
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2019-4 K. Kojima, K. Ikemura, and S. F. Chichibu Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere Applied Physics Express 12
pp.062010 1-4
APEX
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2019-3 K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T. Nakano Impacts of growth temperature on the structural properties of BGaN films grown by metalorganic vapor phase epitaxy using trimethylboron Japanese Journal of Applied Physics 58
pp.SC1042 1-5
JJAP
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2019-2 S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures Japanese Journal of Applied Physics 58
pp.SC0802 1-10
JJAP
(pdf)

OPEN ACCESS
2019-1 K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps Applied Physics Letters 114
pp.011102 1-5
APL
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2018-7 冨田大輔, 斉藤真, 包全喜, 石黒徹, 秩父重英 "酸性アモノサーマル法によるGaN単結晶の育成", 日本セラミックス協会セラミックス誌 特集号「結晶材料・結晶育成技術のフロンティア」 セラミックス 第53巻
第12号
pp.874-877
2018-6 K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H Applied Physics Letters 113
pp.191901 1-5
APL
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2018-5 D. Tomida, Q. Bao, M. Saito, K. Kurimoto, F. Sato, T. Ishiguro, and S. F. Chichibu Effects of extra metals added in an autoclave during acidic ammonothermal growth of m-plane GaN single crystals using an NH4F mineralizer Applied Physics Express 11
pp.091002 1-4
APEX
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2018-4 S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, and A. Uedono Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate Applied Physics Letters 112
pp.211901 1-5
APL
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2018-3 A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi Carrier trapping by vacancy-type defects in Mg-implanted GaN studied using monoenergetic positron beams physica status solidi (b) 255
pp.1700521 1-9
pss(b)
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2018-2 S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN Journal of Applied Physics 123
pp.161413 1-13
JAP
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2018-1 S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals Journal of Applied Physics 123
pp.065104 1-8
JAP
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2017-6 T. Miyanaga, T. Azuhata, K. Nitta, and S. F. Chichibu Local structure around In atoms in coherently grown m-plane InGaN film Journal of Synchrotron Radiatin 24
pp.1012-1016
JSR
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2017-5 K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals Applied Physics Letters 111
pp.032111 1-4
APL
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2017-4 K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, A. Uedono, and S. F. Chichibu Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate Applied Physics Express 10
pp.061002 1-4
APEX
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2017-3 H. Nakai, M. Sugiyama, and S. F. Chichibu Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer Applied Physics Letters 110
pp.181102 1-5
APL
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2017-2 K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1-xN multiple quantum wells Applied Physics Express 10
pp.015802 1-4
APEX
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2017-1 S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato Defect-resistant radiative performance of m-plane immiscible Al1-xInxN epitaxial nanostructures for deep-ultraviolet and visible polarized-light emitters Advanced Materials 29
pp.1603644 1-9 (on-line Nov.24, 2016)
Adv.Mater.
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2016-4 K. Kojima, T. Otomo, K. Ikemura, Y. Yamazaki, M. Saito, H. Ikeda, K. Fujito, and S. F. Chichibu Determination of absolute value of quantum efficiency of radiation in high quality GaN single crystals using an integrating sphere Journal of Applied Physics 120
pp.015704 1-7
JAP
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2016-3 A. Uedono, Y. Tsukada, Y. Mikawa, T. Mochizuki, H. Fujisawa, H. Ikeda, K. Kurihara, K. Fujito, S. Terada, S. Ishibashi, and S. F. Chichibu Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam Journal of Crystal Growth 448
pp.117-121
JCG
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2016-2 K. Kojima, D. Kagaya, Y. Yamazaki, H. Ikeda, K. Fujito, and S. F. Chichibu Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate Japanese Journal of Applied Physics 55
pp.05FG04 1-5
JJAP
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2016-1 K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer Japanese Journal of Applied Physics 55
pp.05FA03 1-4
JJAP
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2015-5 S. F. Chichibu, Y. Ishikawa, K. Furusawa, H. Miyake, and K. Hiramatsu Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy IEEE Xplore Digital Library 2015 (pdf)
2015-4 S. F. Chichibu, H. Miyake, Y. Ishikawa, K. Furusawa, and K. Hiramatsu Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1-xN multiple quantum wells grown by metalorganic vapor phase epitaxy Applied Physics Letters 107
pp.121602 1-5
APL
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2015-3 K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method Applied Physics Express 8
pp.095501 1-4
APEX
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2015-2 Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, and K. Kakimoto Structural and optical properties of AlN grown by solid source solution growth method Japanese Journal of Applied Physics 54
pp.085501 1-5
JJAP
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2015-1 K. Furusawa, Y. Ishikawa, H. Ikeda, K. Fujito, and S. F. Chichibu Local excitation and emission dynamics of an isolated single basal-plane stacking-fault in GaN studied by spatio-time-resolved cathodoluminescence Japanese Journal of Applied Physics 54
pp.030303 1-4
JJAP
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2014-3 S. F. Chichibu, K. Hazu, K. Furusawa, Y. Ishikawa, T. Onuma, T. Ohtomo, H. Ikeda, and K. Fujito High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1-xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate Journal of Applied Physics 116
pp.213501 1-6
JAP
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2014-2 Q. Bao, M. Saito, K. Hazu, Y. Kagamitani, K. Kurimoto, D. Tomida, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu Ammonothermal growth of GaN on a self-nucleated GaN seed crystal Journal of Crystal Growth 404
pp.168-171
JCG
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2014-1 T. Miyanaga, T. Azuhata, K. Nakajima, H. Nagoya, K. Hazu, and S. F. Chichibu Polarized XAFS study of Al K-edge for m-plane AlGaN films Journal of Physics: Conference Series 502
pp.012031 1-4
JP(CS)
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2013-9 Q. Bao, M. Saito, K. Hazu, K. Furusawa, Y. Kagamitani, R. Kayano, D. Tomida, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu Ammonothermal Crystal Growth of GaN Using an NH4F Mineralizer Crystal Growth & Design 13
pp.4158-4161
CGD
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2013-8 S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters 103
pp.142103 1-5
APL
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2013-7 K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun Applied Physics Letters 103
pp.052108 1-4
APL
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2013-6 Q. Bao, T. Hashimoto, F. Sato, K. Hazu, M. Saito, Y. Kagamitani, T. Ishinabe, R. Kayano, D. Tomida, K. Qiao, S. F. Chichibu, T. Ishiguro and C. Yokoyama Acidic ammonothermal growth of GaN crystals using GaN powder as a nutrient CrystEngComm 15
pp.5382-5386
CEC
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2013-5 K. Shimada, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada, and T. Sota Electronic Structure and Spontaneous Polarization in ScxAlyGa1-x-yN Alloys Lattice-Matched to GaN: A First-Principles Study Japanese Journal of Applied Physics 52
pp.08JM04 1-4
JJAP
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2013-4 S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy Journal of Applied Physics 113
pp.213506 1-6
JAP
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2013-3 横山千昭、秩父重英、石黒徹、包全喜 GaN基板と結晶成長技術 電子ジャーナル別冊2013化合物半導体技術大全 第2編化合物半導体基板・デバイス技術第6章第1節 pp.70-74
2013-2 横山千昭、秩父重英、石黒徹、包全喜 GaN結晶成長技術の最新動向 電子ジャーナル別冊2013最先端ウェーハ&製造技術大全 第2編結晶成長技術第4章 pp.41-45
2013-1 S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys physica status solidi (c) 10
pp.501-506
pss(c)
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2012-11 Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and S. F. Chichibu Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence Applied Physics Letters 101
pp.212106 1-4
APL
(pdf)
2012-10 K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN Applied Physics Letters 101
pp.072107 1-4
APL
(pdf)
2012-9 K. Shimada, M. Takouda, Y. Hashiguchi, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada and T. Sota First-principles study of spontaneous polarization and band gap bowing in ScxAlyGa1-x-yN alloys lattice-matched to GaN Semiconductor Science & Technology 27
pp.105014 1-5
SST
(pdf)
2012-8 D. Tomida, Y. Kagamitani, Q. Bao, K. Hazu, H. Sawayama, S. F. Chichibu, C. Yokoyama, T. Fukuda, and T. Ishiguro Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer Journal of Crystal Growth 353
pp.59-62
JCG
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2012-7 秩父重英 酸性鉱化剤の気相合成によるアモノサーマル法成長GaN単結晶の高純度化 応用物理 (研究紹介) 第81巻, 第6号,
pp.502-505
応用物理
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2012-6 S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Namita, S. Nagao, K. Fujito, and A. Uedono Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by ydride vapor phase epitaxy Journal of Applied Physics 111
pp.103518 1-11
JAP
(pdf)
2012-5 D. Tomida, S. F. Chichibu, Y. Kagamitani, Q. Bao, K. Hazu, R. Simura, K. Sugiyama, C. Yokoyama, T. Ishiguro, and T. Fukuda Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis Journal of Crystal Growth 348
pp.80-84
JCG
(pdf)
2012-4 Q. Bao, H. Sawayama, T. Hashimoto, F. Sato, K. Hazu, Y. Kagamitani, T. Ishinabe, M. Saito, R. Kayano, D. Tomida, K. Qiao, S. F. Chichibu, C. Yokoyama, and T. Ishiguro Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I CrystEngComm 14
pp.3351-3354
CEC
(pdf)
2012-3 T. Onuma, Y. Kagamitani, K. Hazu, T. Ishiguro, T. Fukuda, and S. F. Chichibu Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN Review of Scientific Instruments 83
pp.043905 1-7
RSI
(pdf)
2012-2 S. F. Chichibu, M. Kagaya, P. Corfdir, J. D. Ganière, B. Deveaud-Plédran, N. Grandjean, S. Kubo, and K. Fujito Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth Semiconductor Science & Technology 27
pp.024008 1-7
SST
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2012-1 A. Uedono, S. Ishibashi, K. Tenjinbayashi, T. Tsutsui, K. Nakahara, D. Takamizu, and S. F. Chichibu Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam Journal of Applied Physics 111
pp.014508 1-6
JAP
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2011-6 M. Kagaya, P. Corfdir, J. -D. Ganièl, B. Deveaud-Plédran, N. Garndjean, and S. F. Chichibu Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate Japanese Journal of Applied Physics 50
pp.111002 1-5
JJAP
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2011-5 K. Shimada, A. Zenpuku, K. Fujiwara, K. Hazu, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada, and T. Sota Spontaneous polarization and band gap bowing in YxAlyGa1-x-yN alloys lattice-matched to GaN Journal of Applied Physics 110
pp.074114 1-5
JAP
(pdf)
2011-4 S. F. Chichibu, K. Hazu, T. Onuma, and A. Uedono Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions Applied Physics Letters 99
pp.051902 1-3
APL
(pdf)
2011-3 K. Hazu and S. F. Chichibu Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs Optics Express 19(S4)
pp.A1008-A1021
OPEX
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2011-2 S. F. Chichibu, K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, and T. Ishiguro Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates Applied Physics Express 4
pp.045501 1-3
APEX
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2011-1 K. Hazu, M. Kagaya, T. Hoshi, T. Onuma, and S. F. Chicihbu Impacts of anisotropic tilt mosaics of state-of-the-art m-plane freestanding GaN substrates on the structural and luminescent properties of m-plane AlxGa1-xN epilayers Journal of Vacuum Science & Technology B 29(2)
pp.021208 1-9
JVSTB
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Year Authors Title Journal Vol., Page Link
2010-5 S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono Major impacts of point defects and impurities on the carrier recombination dynamics in AlN Applied Physics Letters 97
pp.201904 1-3
APL
(pdf)
2010-4 Y. Kagamitani, T. Kuribayashi, K. Hazu, T. Onuma, D. Tomida, R. Simura, S. F. Chichibu, K. Sugiyama, C. Yokoyama, T. Ishiguro, and T. Fukuda Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer Journal of Crystal Growth 312
pp.3384-3387
JCG
(pdf)
2010-3 T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. F. Kaeding, M. Iza, S. P. DenBaars, S. Nakamura, and S. F. Chichibu Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy Applied Physics Letters 96
pp.091913 1-3
APL
(pdf)
2010-2 T. Onuma, K. Hazu, A. Uedono, T. Sota, and S. F. Chichibu Identification of extremely radiative nature of AlN by time-resolved photoluminescence Applied Physics Letters 96
pp.061906 1-3
APL
(pdf)
2010-1 K. Hazu, T. Hoshi, M. Kagaya, T. Onuma, and S. F. Chichibu Light polarization characteristics of m-plane AlxGa1-xN films suffering from in-plane anisotropic tensile stresses Journal of Applied Physics 107
pp.033701 1-6
JAP
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2009-7 秩父重英, 上殿明良 III族窒化物半導体(Al,Ga)Nにおける発光特性と点欠陥の相関関係 =特集= 窒化物半導体結晶中の欠陥日本結晶成長学会誌 (総合報告) 日本結晶成長学会誌 (総合報告) 第36巻,第3号,
pp.20-31(pp.166-177)
2009-6 T. Onuma, T. Yamada, H. Yamane, S. F. Chichibu Structural, Optical, and Homoepitaxial Studies on the Bulk GaN Single Crystals Spontaneously Nucleated by the Na-flux Method Applied Physics Express 2
pp.091004 1-3
APEX
(pdf)
2009-5 J.S. Speck and S. F. Chichibu Nonpolar and Semipolar Group III Nitride-Based Materials MRS Bulletin 34
pp.304-309
MRS Bulletin
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2009-4 M. Kubota, T. Onuma, Y. Ishihara, A. Usui, A. Uedono, and S. F. Chichibu Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques Journal of Applied Physics 105
pp.083542 1-9
JAP
(pdf)
2009-3 A. Uedono, S. Ishibashi, S. Keller, C. Moe, P. Cantu, T. M. Katona, D. S. Kamber, Y. Wu, E. Letts, S. A. Newman, S .Nakamura, J. S. Speck, U. K. Mishra, S. P. DenBaars, T. Onuma, and S. F. Chichibu Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation Journal of Applied Physics 105
pp.054501 1-6
JAP
(pdf)
2009-2 T. Hoshi, K. Hazu, K. Ohshita, M. Kagaya, T. Onuma, K. Fujito, H. Namita, and S. F. Chichibu Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1-xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy Applied Physics Letters 94
pp.071910 1-3
APL
(pdf)
2009-1 T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono, and S. F. Chichibu Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy Journal of Applied Physics 105
pp.023529 1-7
JAP
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2008-8 尾沼猛儀, 秩父重英 非極性面窒化物半導体発光素子の最近の動向 マテリアルインテグレーション(特集:発光材料の新展開) 第21巻,
12月号, pp.53-63
マテリアルインテグレーション
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2008-7 S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy Applied Physics Letters 93
pp.151908 1-3
APL
(pdf)
2008-6 T. Onuma, K. Okamoto, H. Ohta, and S. F. Chichibu Anisotropic optical gain in m-plane InxGa1-xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates Applied Physics Letters 93
pp.091112 1-3
APL
(pdf)
2008-5 S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J.S.Speck, and S.Nakamura Impact of Point Defects on the Luminescence Properties of (Al,Ga)N Materials Science Forum 590
pp.233-248
FILE
(pdf)
2008-4 T. Hoshi, T. Koyama, M. Sugawara, A. Uedono, J. F. Kaeding, R. Sharma, S. Nakamura, and S. F. Chichibu Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Physica Status Solidi (c) 5(6)
pp.2129-2132
pss(c)
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2008-3 S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, and H. Ohta Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates Applied Physics Letters 92
pp.091912 1-3
Erratum
93
pp.129901 1
APL
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Erratum
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2008-2 Q. Sun, S. -Y. Kwon, Z. Ren, J. Han, T. Onuma, S. F. Chichibu, and S. Wang Microstructural evolution in m-plane GaN growth on m-plane SiC Applied Physics Letters 92
pp.051112 1-3
APL
(pdf)
2008-1 M. Takeuchi, S. Ooishi, T. Ohtsuka, T. Maegawa, T. Koyama, S. F. Chichibu, and Y. Aoyagi Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition Applied Physics Express 1
pp.021102 1-3
APEX
(pdf)
2007-12 T. Ishiguro, Y. Toda, S. Adachi, K. Hazu, T. Sota, and S. F. Chichibu Coherent manipulation of A and B excitons in GaN Physica Status Solidi (c) 4(7)
pp.2776-2779
pss(c)
(pdf)
2007-11 H. Ikeda, T. Okamura, K. Matsukawa, T. Sota, M. Sugawara, T. Hoshi, P. Cantu, R. Sharma, J. F. Kaeding, S. Keller, U. K. Mishra, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, J. S. Speck, S. P. DenBaars, S. Nakamura, T. Koyama, T. Onuma, and S. F. Chichibu Impact of strain on free-exciton resonance energies in wurtzite AlN Journal of Applied Physics 102
pp.123707 1-5
Erratum
103
pp.089901 1
JAP
(pdf)

Erratum
(pdf)
2007-10 S. F. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method Applied Physics Letters 91
pp.251911 1-3
APL
(pdf)
2007-9 T. Onuma, H. Amaike, M. Kubota, K. Okamoto, H. Ohta, J. Ichihara, H. Takasu, and S. F. Chichibu Quantum-confined Stark effects in the m-plane In0.15Ga0.85N/GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate Applied Physics Letters 91
pp.181903 1-3
APL
(pdf)
2007-8 T. Onuma, T. Koyama, A. Chakraborty, M. McLaurin, B. A. Haskell, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science & Technology B 25
pp.1524-1528
JVSTB
(pdf)
2007-7 T. Miyanaga, T. Azuhata, S. Matsuda, Y. Ishikawa, S. Sasaki, T. Uruga, H. Tanida, S. F. Chichibu, and T. Sota Atomic distribution in InxGa1-xN single quantum wells studied by extended x-ray absorption fine structure Physical Review B 76
pp.035314 1-5
PRB
(pdf)
2007-6 T. Koyama, M. Sugawara, T. Hoshi, A. Uedono, J. F. Kaeding, R. Sharma, S. Nakamura, and S. F. Chichibu Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy Applied Physics Letters 90
pp.241914 1-3
APL
(pdf)
2007-5 S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Philosophical Magazine 87
pp. 2019-2039
PM
(pdf)
2007-4 M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, T. Kinoshita, K. Takada, H. Murakami, Y. Kumagai, A. Koukitu, T. Koyama, S. F. Chichibu, and Y. Aoyagi Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD Jornal of Crystal Growth 305
pp. 360-365
JCG
(pdf)
2007-3 K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes Japanese Journal of Applied Physics 46
pp. L187-L189
JJAP
(pdf)
2007-2 C. Moe, T. Onuma, K. Vampola, N. Fellows, H. Masui, S. Newman, S. Keller, S. F. Chichibu, S. P. DenBaas, and D. Emerson Increased power from deep ultraviolet LEDs via precursor selection Jornal of Crystal Growth 298
pp. 710-713
JCG
(pdf)
2007-1 T. Onuma, T. Nozaka, H. Yamaguchi, T. Suzuki, and S. F. Chichibu Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates Jornal of Crystal Growth 298
pp. 193-197
JCG
(pdf)
2006-5 S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Nature Materials 5
pp. 810-816
nmat
(pdf)
2006-4 T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates Applied Physics Letters 89
pp. 091906 1-3
APL
(pdf)
2006-3 T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, and S. F. Chichibu Exciton dynamics in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Physica Status Solidi (c) 3(6)
pp.2082-2086
pss(c)
(pdf)
2006-2 T. Koyama, M. Sugawara, Y. Uchinuma, J. F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, and S. F. Chichibu Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates Physica Status Solidi (a) 203(7)
pp.1603-1606
pss(a)
(pdf)
2006-1 T. Onuma, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple quantum wells Applied Physics Letters 88
pp.111912 1-3
APL
(pdf)
2005-5 J. Su, M. Gherasimova, G. Cui, H. Tsukamoto, J. Han, T. Onuma, M. Kurimoto, S. F. Chichibu, C. Broadbridge, Y. He, and A. V. Nurmikko Growth of AlGaN nanowires by metalorganic chemical vapor deposition Applied Physics Letters 87
pp.183108 1-3
APL
(pdf)
2005-4 T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu Localized exciton dynamics in nonpolar (11-20) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Applied Physics Letters 86
pp.151918 1-3
APL
(pdf)
2005-3 S. F. Chichibu, T. Koida, M. D. Craven, B. A. Haskell, T. Onuma, T. Sota, J. S. Speck, S. P. DenBaars, and S. Nakamura Reduction of bound-state and nonradiative defect densities in nonpolar (11-20) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique Physica Status Solidi (c) 2(7)
pp.2700-2703
pss(c)
(pdf)
2005-2 A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira, and R. Suzuki Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular beam epitaxy probed using monoenergetic positron beams Journal of Applied Physics 97
pp.043514 1-5
JAP
(pdf)
2005-1 S. F. Chichibu, A. Uedono, T. Onuma, T. Sota, B. A. Haskell, S. P. DenBaars, J. S. Speck, and S. Nakamura Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Applied Physics Letters 86
pp.021914 1-3
APL
(pdf)
2004-6 S. F. Chichibu, M. Sugiyama, T. Nozaka,T. Suzuki, T. Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, and A. Uedono Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers Journal of Crystal Growth 272
pp.481-488
JCG
(pdf)
2004-5 T. Koida, Y. Uchinuma, J. Kikuchi, K. R. Wang, M. Terazaki, T. Onuma, J. F. Keading, R. Sharma, S. Nakamura, and S. F. Chichibu Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy Journal of Vacuum Science & Technology B 22
pp.2158-2164
JVSTB
(pdf)
2004-4 T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth Applied Physics Letters 84
pp.3768-3770
APL
(pdf)
2004-3 M. Sugiyama, T. Nosaka, T. Suzuki, T. Koida, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono, and S. F. Chichibu Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics 43
pp.958-965
JJAP
(pdf)
2004-2 T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Keading, S. Keller, U. K. Mishra, S. Nakamura, and S. P. DenBaars Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques Journal of Applied Physics 95
pp.2495-2504
JAP
(pdf)
2004-1 M. Sugiyama, T. Nosaka, T. Onuma, K. Nakajima, P. Ahmet, T. Aoyama, T. Chikyow, and S. F. Chichibu Critical Roles of Decomposition-Shielding Layer Deposited at Low-Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy Japanese Journal of Applied Physics 43
pp.106-110
JJAP
(pdf)
2003-13 T. Onuma, S. F. Chichibu, T. Aoyama, K. Nakajima, P. Ahmet, T. Azuhata, T. Chikyow, T. Sota, S. Nagahama and T. Mukai Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm Japanese Journal of Applied Physics 42
pp.7276-7283
JJAP
(pdf)
2003-12 S. P. Lepkowski, T. Suski, H. Teisseyre, T. Kitamura, Y. Ishida, H. Okumura, T. Onuma, T. Koida, and S. F. Chichibu Anomalous pressure dependence of light emission in cubic InGaN Physica Status Solidi (c) 0(7)
pp.2682-2685
pss(c)
(pdf)
2003-11 M. Sugiyama, T. Nosaka, K. Nakajima, P. Ahmet, T. Aoyama, T. Chikyow, S. F. Chichibu Effects of deposition parameters of low-temperature GaN layer on the structural and optical properties of cubic GaN epilayers grown on GaAs(001) substrates by MOVPE Physica Status Solidi (c) 0(7)
pp.2099-2102
pss(c)
(pdf)
2003-10 S. Adachi, H. Sasakura, S. Muto, K. Hazu, T. Sota, S. F. Chichibu, and T. Mukai Exciton-exciton correlation effects on FWM in GaN Physica Status Solidi (b) 240(2)
pp.348-351
pss(b)
(pdf)
2003-9 T. Onuma, Y. Uchinuma, E. Suh, H. Lee, T. Sota and S. F. Chichibu Improved Emission Efficiency in InGaN / GaN Quantum Wells with Compositionally-Graded Barriers Studied by Time-Resolved Photoluminescence Spectroscopy Japanese Journal of Applied Physics 42
L1369-L1371
JJAP
(pdf)
2003-8 N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, and G. Salviati Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope Journal of Applied Physics 94
4315-4319
JAP
(pdf)
2003-7 T. Onuma, S. F. Chichibu, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, and I. Akasaki Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy Journal of Applied Physics 94
pp.2449-2453
JAP
(pdf)
2003-6 S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate Journal of Vacuum Science & Technology B 21
pp.1856-1862
JVST
(pdf)
2003-5 S. Adachi, S. Muto, K. Hazu, T. Sota, K. Suzuki, S. F. Chichibu, T. Mukai Exciton-exciton interaction and heterobiexcitons in GaN Physical Review B 67
205212
PRB
(pdf)
2003-4 T. Azuhata, T. Homma, Y. Ishikawa and S. F. Chichibu InGaN-Based Single-Chip Multicolor Light-Emitting Diodes Japanese Journal of Applied Physics 42
L497-L498
JJAP
(pdf)
2003-3 S. F. Chichibu, T. Onuma, T. Sota S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells Journal of Applied Physics 93
pp.2051-2054
JAP
(pdf)
2003-2 T. Suski, H. Teisseyre, S. P. Lepkowski, P. Perlin, H. Mariette, T. Kitamura, Y. Ishida, H. Okumura, and S. F. Chichibu Light Emission Versus Energy Gap in Group-III Nitrides. Hydrostatic Pressure Studies Physica Status Solidi (b) 235(2)
pp.225-231
pss(b)
(pdf)
2003-1 K. Torii, N. Usukura, A. Nakamura, T. Sota, S. F . Chichibu, T. Kitamura, and H. Okumura Properties of optical phonons in cubic InxGa1-xN Applied Physics Letters 82
pp.54-56
APL
(pdf)
2002-6 T. Suski, H. Teisseyre, S. P. Lepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, and S. F. Chichibu Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells Physica Status Solidi (b) 234(3)
pp.759-763
pss(b)
(pdf)
2002-5 S. F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S. P. DenBaars, S. Nakamura, and H. Okumura Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001) Physica Status Solidi (b) 234(3)
pp.746-749
pss(b)
(pdf)
2002-4 T. Onuma, S. F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, and M. Tanaka Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy Applied Physics Letters 81
pp.652-654
APL
(pdf)
2002-3 T. Suski, H. Teisseyre, S. P. Lepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, and S. F. Chichibu Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells Applied Physics Letters 81
pp.232-235
APL
(pdf)
2002-2 K. Hazu, A. Shikanai, T. Sota, K. Suzuki, S. Adachi, S. F. Chichibu, and T. Mukai Optical nonlinealities and phase relaxation of excitons in GaN Physical Review B 65
pp.195202
PRB
(pdf)
2002-1 S. F. Chichibu, T. Azuhata, H. Okumura, A. Tackeuchi, T. Sota, and T. Mukai Localized exciton dynamics in InGaN quantum well structures Applied Surface Science 190
pp.330-338
ASS
(pdf)
2001-12 T. Kitamura, Y .Suzuki, Y. Ishida, X. -Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, H. Okumura Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy Physica Status Solidi (a) 188(2)
p.705-709
pss(a)
(pdf)
2001-11 T. Kitamura, Y. Ishida, X. -Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, H. Okumura Electical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy Physica Status Solidi (b) 228(2)
pp.599-602
pss(b)
(pdf)
2001-10 S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, and H. Okumura Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells Applied Physics Letters 79
p.4319-4321
APL
(pdf)
2001-9 S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura, Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, and T. Mukai Optical and structural studies in InGaN quantum well structure laser diodes Journal of Vacuum Science & Technology B 19
pp.2177-2183
JVST
(pdf)
2001-8 S. F. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, S. P. DenBaars, S. Nakamura, Y. Ishida, and H. Okumura Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC(001) by rf molecular-beam epitaxy Applied Physics Letters 79
pp.3600-3602
APL
(pdf)
2001-7 K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota and S. Nakamura Excitonic polariton structures in Wurtzite GaN Physica B 302-303
pp268-276
PhysicaB
(pdf)
2001-6 T. Azuhata, T. Homma, Y. Ishikawa, S.F. Chichibu, T. Sota, and T. Mukai Current-modulated electroluminescence spectroscopy and its application to InGaN single-quantum-well blue and green light-emitting diodes Applied Physics Letters 79
pp.1100-1102
APL
(pdf)
2001-5 S. F. Chichibu, T. Azuhata, T. Sota, and T. Mukai Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm Applied Physics Letters 79
pp.341-343
APL
(pdf)
2001-4 T. Kitamura, S. H. Cho, Y. Ishida, T. Ide, X. Q. Shen, H. Nakanishi, S. Chichibu and H. Okumura Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE Journal of Crystal Growth 227-228
pp.471-475
JCG
(pdf)
2001-3 A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, and S. Nakamura Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams Journal of Applied Physics 90
pp.181-186
JAP
(pdf)
2001-2 S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, and S. Nakamura Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes Physica Status Solidi (a) 183(1)
pp.91-98
pss(a)
(pdf)
2001-1 S. F. Chichibu, A. Setoguchi, A. Uedono, K. Yoshimura, and M. Sumiya Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters 78
pp.28-30
APL
(pdf)
Year Authors Title Journal Vol., Page Link
2000-10 T. Azuhata, M. Ono, K. Torii, T. Sota, S. F. Chichibu, and S. Nakamua Forward Raman scattering by quasilongitudinal optical phonons in GaN Journal of Applied Physics 88
pp.5202-5205
JAP
(pdf)
2000-9 S. F. Chichibu, T. Azuhata, T. Sota, T. Mukai, and S. Nakamua Localized quantum-well excitons in InGaN single-quantum-well amber light emitting diodes Journal of Applied Physics 88
pp.5153-5157
JAP
(pdf)
2000-8 K. Torii, M. Ono, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamua Raman scattering from phonon-polaritons in GaN Physical Review B B62
pp.10861-10866
PRB
(pdf)
2000-7 M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, and M. Yoshimoto Structural analysis of InxGa1-xN single quantum wells by coaxial impact collision ion scattering spectroscopy Applied Physics Letters 77
pp.2512-2514
APL
(pdf)
2000-6 K. Torii, T. Koga, T. Sota, T. Azuhata, S. F. Chichibu, and S. Nakamua An attenuated-total-reflection study on the surface phonon-polariton in GaN Journal of Physics: Condensed Matter 12
pp.7041-7044
JPCM
(pdf)
2000-5 S. F. Chichibu, A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi,T. Sota, O. Brandt, K. H. Ploog, T. Mukai, and S. Nakamura Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction Physica Status Solidi(a) 180(1)
pp.321-325
pss(a)
(pdf)
2000-4 S. F. Chichibu, A. Shikanai, T. Deguchi, A. Setoguchi, R. Nakai, H. Nakanishi, K. Wada, S. P. DenBaars, T. Sota and S. Nakamura Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells Japanese Journal of Applied Physics 39
pp.2417-2424
JJAP
(pdf)
2000-3 S. F. Chichibu, K. Wada, J. Mullhauser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, and S. Nakamura Evidence of localization effects in InGaN single-quantum-well ultraviolet light emitting diodes Applied Physics Letters 76
pp.1671-1673
APL
(pdf)
2000-2 S. F. Chichibu, K. Torii, T. Deguchi, T. Sota, A. Setoguchi, H. Nakanishi, T. Azuhata, and S. Nakamura Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowt Appplied Physics Letters 76
pp.1576-1578
APL
(pdf)
2000-1 A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu, and S. Nakamura A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single quantum well structure Applied Physics Letters 76
pp.454-456
APL
(pdf)
1999-12 S. Keller, S. B. Fleischer, S. F. Chichibu, J. E. Bowers, U. K. Mishra, and S. P. DenBaars Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells Physica Status Solidi(b) 216(1)
pp.269-272
pss(b)
(pdf)
1999-11 S. F. Chichibu, T. Deguchi, T. Sota, K. Wada, S. P. DenBaars, T. Mukai, and S. Nakamura Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN /AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures Physica Status Solidi(a) 176(1)
pp.85-90
pss(a)
(pdf)
1999-10 T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, and S. Nakamura Two-photon absorption spectra in wurtzite GaN Applied Physics Letters 75
pp.2076-2078
APL
(pdf)
1999-9 T. Deguchi, K. Torii, K. Shimada, T. Sota, R. Matsuo, M. Sugiyama, A. Setoguchi, S. Chichibu, and S. Nakamura Optical Properties of an InGaN Active Layer in Ultraviolet Light Emitting Diode Japanese Journal of Applied Physics 38
pp.L975-L977

JJAP(pdf)
1999-8 T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura Quatum-confined Stark effect in an AlGaN/GaN/AlGaN Single Quantu m Well Structure Japanese Journal of Applied Physics 38
pp.L914-L916
JJAP
(pdf)
1999-7 K. Torii, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, and S. Nakamura Reflectance and emission spectra of excitonic polaritons in GaN Physical Review B B60
pp.4723-4730
PRB
(pdf)
1999-6 T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, and S. Nakamura Structural and vibrational properties of GaN Journal of Applied Physics 86
pp.1860-1866
JAP
(pdf)
1999-5 M. Yamaguchi, T. Yagi, A. Shimada, T. Sota, S. Chichibu, and S. Nakamura Brillouin scattering in GaN substrate Journal of Applied Physics 85
pp.8502-8504
JAP
(pdf)
1999-4 S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura Optical properties of InGaN quantum wells Materials Science and Engineering B 59
pp.298-306
MSEB
(pdf)
1999-3 S. F. Chichibu, T. Sota, K. Wada, S. P. DenBaars, and S. Nakamura Spectroscopic studies in InGaN quantum wells Materials Research Society Internet Journal Nitride Semiconductor Research 4S1
pp.G2.7
MRS Internet Journal
(pdf)
1999-2 T. Azuhata, K. Shimada, T. Deguchi, T. Sota, K. Suzuki, S. Chichibu, and S. Nakamura Infrared Lattice Absorption in Wurtzite GaN Japanese Journal of Applied Physics 38
pp.L151-L153
JJAP
(pdf)
1999-1 S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth Applied Physics Letters 74
pp.1460-1462
APL
(pdf)
1998-12 S. Keller, S. F. Chichibu, M. Minski, E. Hu, U. Mishra, and S. DenBaars Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells Journal of Crystal Growth 195
pp.258-264
JCG
(pdf)
1998-11 M. S. Minsky, S. Chichibu, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, U. K. Mishra, and S. P. DenBaars Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers Japanese Journal of Applied Physics 37
pp.L1362-L1364
JJAP
(pdf)
1998-10 S. F. Chichibu, A. Abare, M. Minsky, S. Keller, S. Fleischer, J. Bowers, E. Hu, U. Mishra, L. Coldren, S. DenBaars, and T. Sota Effective bandgap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Applied Physics Letters 73
pp.2006-2008
APL
(pdf)
1998-9 S. Chichibu, T. Sota, K. Wada, and S. Nakamura Exciton localization in InGaN quantum well devices Journal of Vacuum Science and Technology B16
pp.2204-2214
JVST
(pdf)
1998-8 H. Okumura, H. Hamaguchi, T. Koizumi, K. Balakrishnan, Y. Ishida, M. Arita, S. Chichibu, H. Nakanishi, T. Nagamoto, and S. Yoshida Growth of Cubic III-nitrides by gas source MBE using atomic nitrogen plasma :GaN, AlGaN and AlN Jounal of Crystal Growth 189-190
pp.390-394
JCG
(pdf)
1998-7 K. Iwata, H. Asahi, K. Asami, A. Ishida, R. Kuroiwa, H. Tampo, S. Gonda, and S. Chichibu Promising characteristics of GaN layers grown on amorphous silica substrates by gas source MBE Jounal of Crystal Growth 189-190
pp.218-222
JCG
(pdf)
1998-6 H. Okumura, K. Balakrishnan, H. Hamaguchi, T. Koizumi, S. Chichibu, H. Nakanishi, T. Nagamoto, and S. Yoshida Analysis of MBE growth mode for GaN epilayers by RHEED Jounal of Crystal Growth 189-190
pp.364-369
JCG
(pdf)
1998-5 S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars Effects of Si-doping in the barriers of InGaN multiquantum well purplish-bluelaser diodes Applied Physics Letters 73
pp.496-498
APL
(pdf)
1998-4 K. Wada, S. Chichibu, S. Nakamura, T. Sota, A. Kozen, and T. Murashita Cathodoluminescence study on quantum microstructures 応用物理 第67巻
pp.798-801
OYO BUTSURI
(pdf)
1998-3 T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, and S. Nakamura Luminescence spectra from InGaN multiquantum wells heavily doped with Si Applied Physics Letters 72
pp.3329-3331
APL
(pdf)
1998-2 S. Chichibu, M. Arita, H. Nakanishi, J. Nishio, L. Sugiura, Y. Kokubun, and K. Itaya Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition Journal of Applied Physics 83
pp.2860-2862
JAP
(pdf)
1998-1 T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, and S. Nakamura Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes Semiconductor Science & Technology 13
pp.97-101
SST
(pdf)
1997-10 T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, and S. Nakamura Gain spectra in cw InGaN/GaN MQW laser diodes Materials Science and Engineering B50
pp.251-255
MSEB
(pdf)
1997-9 T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, N. Sarukura, H. Ohtake, T. Yamanaka, and S. Nakamura Nanosecond pump-and-probe study of wurtzite GaN Materials Science and Engineering B50
pp.180-182
MSEB
(pdf)
1997-8 S. Chichibu, K. Wada, and S. Nakamura Spatially resolved cathodoluminescence spectra of InGaN quantum wells Applied Physics Letters 71
pp.2346-2348
APL
(pdf)
1997-7 S. Chichibu, T. Mizutani, T. Shioda, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sota, and S. Nakamura Urbach-Martienssen tails in a wurtzite GaN epilayer Applied Physics Letters 70
pp.3440-3442
APL
(pdf)
1997-6 H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida Growth and Characterization of cubic GaN Journal of Crystal Growth 178
pp.113-133
JCG
(pdf)
1997-5 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura Luminescences from localized states in InGaN epilayers Applied Physics Letters 70
pp.2822-2824
APL
(pdf)
1997-4 S. Chichibu, T. Azuhata, T. Sota, H. Amano, and I. Akasaki Optical properties of tensile-strained wurtzite GaN epitaxial layers Applied Physics Letters 70
pp.2085-2087
APL
(pdf)
1997-3 S. Chichibu, H. Okumura, S. Nakamura, G. Feuillet, T. Azuhata, T. Sota, and S. Yoshida Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films Japanese Journal of Applied Physics 36
pp.1976-1983
JJAP
(pdf)
1997-2 M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu, and S. Nakamura Brillouin scattering study of gallium nitride : elastic stiffness constants Journal of Physics: Condensed Matter 9
pp.241-248
JPCM
(pdf)
1997-1 A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura Biaxial strain dependence of exciton resonance energies in wurtzite GaN Journal of Applied Physics 81
pp.417-424
JAP
(pdf)
1996-3 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura Spontaneous emission of localized excitons in InGaN single and multiquantum well structures Applied Physics Letters 69
pp.4188-4190
APL
(pdf)
1996-2 S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers Applied Physics Letters 68
pp.3766-3768
APL
(pdf)
1996-1 S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura Excitonic emissions from hexagonal GaN epitaxial layers Journal of Applied Physics 79
pp.2784-2786
JAP
(pdf)

(b) International Conferences

277. S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono:
"Impact of vacancy complexes on the nonradiative recombination processes in III-N devices",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 12 (2019), No.PL02.02 (Plenary).
276. Y. Nagasawa, R. Sugie, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu:
"Microscopic nonuniformities in AlGaN-based 260 and 285 nm light-emitting multiple quantum wells grown on AlN templates with dense macrosteps analyzed by cathodoluminescence spectroscopy",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 8 (2019), No.A01.06 (oral).
275. D. Tomida, Q. Bao, M. Saito, K. Kurimoto, M. Ito, T. Ishiguro, and S. F. Chichibu:
"Effects of an extra Al metal added during the acidic ammonothermal growth of GaN crystals",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 8 (2019), No.F01.02 (oral).
274. S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A. Uedono:
"Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.BP01.30 (poster). Selected as Best Poster Award of ICNS13
273. H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda:
"Analytical formula for quantum efficiency of radiation considering self-absorption process",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 7-12 (2019), No.JP02.03 (poster).
272. K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu:
"Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 10 (2019), No.E01.04 (oral).
271. K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, and S. F. Chichibu:
"Dependences of external quantum efficiency of radiation and photoluminescence lifetime on the carbon concentration in GaN on GaN structures",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 10 (2019), No.G08.06 (oral).
270. S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara:
"Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors",
The 13th International Conference on Nitride Semiconductors (ICNS-13), Bellevue, Washington, USA, July 10 (2019), No.A10.06 (oral).
269. K. Hara, N. Umehara, K. Shima, K. Kojima, and S. F. Chichibu:
"Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate",
The 4th International Conference on Physics of 2D Crystals (ICP2C4), Hangzhou, China, Jun.10-15 (2019), No. Technology of Thin Crystals 11:30 (Invited-oral).
268. K. Kojima, K. Watanabe, T. Taniguchi, and S. F. Chichibu:
"Quantification of external quantum efficiency for near-band-edge emission of freestanding h-BN crystals under photo-excitation",
Compound Semiconductor Week 2019 (CSW 2019), Spectroscopy & growth of h-BN II, Kasugano International Forum, Nara, Japan, May 19-23 (2019), No.TuE3-3 (oral).
267. K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu:
"Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes",
19th International Workshop on Junction Technology (IWJT2019), Kyoto University (Uji Campus), Kyoto, Japan, June 6,7 (2019) No.S5-2 (oral). Selected as Best Paper Award of IWJT2019
266. Y. Yoshida, K. Kojima, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, S. Chichibu, A. Hirano, and M. Ippommatsu:
"An outdoor evaluation of 1-Gbps optical wireless communication using AlGaN-based LED in 280-nm Band",
Conference on Lasers and Electro-Optics (CLEO) 2019, Laser Science to Photonic Applications, Session Free-Space & Underwater Communication, San Jose, California, USA, May 05-10, (2019), (oral).
265. S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima,and T. Ishiguro:
"Recent progress in acidic ammonothermal growth of GaN crystals",
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPLasma2019), Nagoya Institute of Technology, Nagoya, Japan, March 17-21 (2019), No.18pF04I (Invited-oral).
264. Y. Nagasawa, K. Kojima, R. Sugie, A. Hirano, M. Ippommatsu, H. Amano, I. Akasaki, and S. F. Chichibu:
"Different nonradiative recombination between on the terraces and macrosteps of uneven QW for 285 nm-LED grown on AlN template with dense macrosteps",
The International Workshop on UV Materials and Devices, Kunming, China, Dec.9-12 (2018). No.LEO-6 (oral).
263. S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara:
"Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sappire substrate",
Materials Research Society, 2018 Fall Meeting, Symposium EP08:Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA, Nov.25-30 (2017). No.EP08.08.07 (oral).
262. M. Saito, Q. Bao, K. Shima, D. Tomida, K. Kojima, T. Ishiguro, and S. F. Chichibu:
"Recent progress of large size bulk GaN crystal growth by acidic ammonothermal method",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session Liquid Growth, No.GR4-1 (Invited-oral).
261. S. Sakai, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi:
"Determination of Deformation Potentials in InGaN-Alloy Material for Theoretical Prediction of Optical Gain Characteristics in Semipolar and Nonpolar InGaN Quantum Wells Laser Diodes",
IEEE 26th International Semiconductor Laser Conference (ISLC2018), Santa Fe, New Mexico, USA, Sep.16-19, (2018), No.TuP11 (poster).
260. K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S. Chichibu:
"1.6-Gbps LED-based ultraviolet communication at 280 nm in direct sunlight",
44th European Conference on Optical Communication (ECOC 2018), Roma, Italy, Sep.23-27, (2018), (oral).
259. N. Yamada, K. Mochizuki, T. Maruyama, K. Ebara, Y. Takahashi, H. Nakagawa, S. Usami, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, and T. Nakano:
"Radiation detection characteristic of BGaN semiconductor detectors",
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD), International Convention Centre Sydney, Sydney, Australia, Nov.10-17, (2018), Session R-05 RTSD (Poster)
258. K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu:
"Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrosteps",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session Monday Poster, No.MoP-OD-4 (poster).
257. S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono:
"Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session Carrier and Phonon Dynamics in GaN, No.CR6-6 (oral).
256. K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S. F. Chichibu:
"Multi-gigabit-class deep ultraviolet wireless communication at 280 nm based on an AlGaN light emitting diode",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session New Optical Devices I, No.OD7-3 (oral).
255. T. Maruyama, Y. Takahashi, N. Yamada, K. Ebara, H. Nakagawa, S. Usami, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, and T. Nakano:
"Fabrication and evaluation of thick BGaN neutron detection diodes",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session Epitaxial Growth II, No.GR10-4 (oral).
254. K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T. Nakano:
"Kinetics analysis of desorption process in BGaN MOVPE",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session Epitaxial Growth II, No.GR10-5 (oral).
253. S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara:
"Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session BN, No.J6-3 (oral).
252. Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu:
"Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grown on macrosteps",
International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa, Japan, Nov.11-16, (2018), Session DUV LED I, No.OD14-2 (oral).
251. S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, and T. Ishiguro:
"Recent progress in acidic ammonothermal growth of GaN crystals",
The 7th International Symposium of Growth of III-Nitrides (ISGN-7), Warsaw, Poland, Aug. 5-10 (2018), No.Tu1.1 (Invited-oral).
250. K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T. Nakano:
"Evaluation of cubic phase formation in wurtzite type BGaN by MOVPE",
The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19), Nara, Japan, June 3-8, (2018), No.P2-8 (poster).
249. T. Tanikawa, T. Fujita, K. Kojima, S. F. Chichibu, and T. Matsuoka:
"Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN",
The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19), Nara, Japan, June 3-8, (2018), No.7C-3.5 (oral).
248. S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara:
"Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate",
The 3rd International Conference on Physics of 2D Crystals (ICP2C3), La Valletta, Malta, May 29-Jun.2 (2018), No. Characterization 11:30 (Invited-oral).
247. A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi:
"Carrier trapping properties of defects in Mg-implanted GaN probed by monoenergetic positron beams",
The 45th International Symposium on Compound Semiconductors (ISCS 2018), Massachusetts Institute of Technology, Cambridge, MA, USA, May 29-June 1 (2018), No.We5PP‐WBG.3 (poster).
246. Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, and S. F. Chichibu:
"Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE",
The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18), Yokohama, Japan, Apr.23-27 (2018), No.LEDIA6-1 (Upgraded Invited-oral).
245. T. Narita, K. Kataoka, H. Iguchi, K. Shima, K. Kojima, S. F. Chichibu, M. Kanechika, T. Uesugi, and T. Kachi:
"P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation",
The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18), Yokohama, Japan, Apr.23-27 (2018), No.LEDIA7-5 (Invited-oral).
244. K. Kojima and S. F. Chichibu:
"Quantum efficiency of radiation in wide bandgap semiconductors",
19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Chengdu, China, May 15-19 (2018), No.INVITED-SESSION1 (Invited-oral).
243. T. Nakano, K. Mochizuki, T. Maruyama, N. Yamada, H. Nakagawa, S. Usami, Y. Honda, H. Amano, S. F. Chichibi, Y. Inoue, and T. Aoki:
"Fabrication of BGaN solid state detector for neutron imaging",
International Workshop on Position Sensitive Neutron Detectors (PSND 2018 workshop), Julich, Germany, May 15-17 (2018), No.PT-13 (poster).
242. M. Winkler, M. Feneberg, S. F. Chichibu, R. Collazo, Z. Sitar, M. D. Neumann, N. Esser, and R. Goldhahn:
"Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20 eV",
German Physical Society (DPG) Spring Meeting, Session HL 27, Nitrides: Preparation and Characterization II, Berlin, Germany, Mar.11-26 (2018), No. HL27.10 (oral).
241. K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018, Gallium Nitride Materials and Devices XIII (OE107), San Francisco, USA, Jan.27-Feb.1, (2018), No.10532-61 (Invited-oral).
240. S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara:
"Spatio-time-resolved cathodoluminescence of h-BN microcrystals",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018, Gallium Nitride Materials and Devices XIII (OE107), San Francisco, USA, Jan.27-Feb.1, (2018), No.10532-18 (Invited-oral).
239. W. Zehua, H. Nakai, M. Sugiyama, and S. F. Chichibu:
"UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial epilayer",
Materials Research Society, 2017 Fall Meeting, Symposium EM4: Wide- and Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA, Nov.26-Dec.1 (2017) No.EM04.06.07 (oral).
238. S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, and S. Ishibashi:
"Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO",
Materials Research Society, 2017 Fall Meeting, Symposium EM4: Wide- and Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA, Nov.26-Dec.1 (2017) No.EM04.04.06 (Invited-oral).
237. N. Umehara, T. Kouno, H. Kominami, K. Kojima, S. F. Chichibu, and K. Hara:
"Cathodoluminescence characterization of the hexagonal boron nitride thin films grown on c-plane sapphire substrates",
International Workshop on UV Materials and Devices (IWUMD) 2017, Fukuoka, Japan, Nov.14-18 (2017). No.Th-P31 (poster).
236. S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara:
"Spatio-time-resolved cathodoluminescence studies of hexagonal BN microcrystals",
International Workshop on UV Materials and Devices (IWUMD) 2017, Fukuoka, Japan, Nov.14-18 (2017). No.Th-P23 (poster).
235. T. Nakano, K. Mochizuki, T. Nakamura, T. Aoki, Y. Inoue, K. Kojima, and S. F. Chichibu:
"Study of Boron metal organic sources for BGaN growth using MOVPE",
International Workshop on UV Materials and Devices (IWUMD) 2017, Fukuoka, Japan, Nov.14-18 (2017). No.Th-P15 (poster).
234. Y. Inatomi, Y. Kangawa, S. F. Chichibu, and K. Kakimoto:
"Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE",
International Workshop on UV Materials and Devices (IWUMD) 2017, Fukuoka, Japan, Nov.14-18 (2017). No.Th-P8 (poster).
233. K. Kojima, Y. Hayashi, K. Hiramatsu, H. Miyake, and S. F. Chichibu:
"Compositional modulation for high AlN mole fraction AlxGa1-xN multiple quantum wells to enhance overlap integral of carrier wavefunctions",
International Workshop on UV Materials and Devices (IWUMD) 2017, Fukuoka, Japan, Nov.14-18 (2017). No.We-P41 (poster).
232. T. Nakano, T. Arikawa, K. Mochizuki, H. Nakagawa, S. Usami, M. Kushimoto, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, H. Mimura, Y. Inoue, and T. Aoki:
"Fabrication and evaluation of vertical type BGaN neutron detection diodes",
2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD), Hyatt Regency, Atlanta, Georgia, USA, Oct.21-28 (2017). No.R-17-4 (oral).
231. S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato:
"Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures",
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017), Session: Th-3 - Novel Devices and Structures 1, Banff, Canada, Oct.8-12 (2017), No.Th3.1 (Invited-oral).
230. S. Usami, Y. Honda, K. Kojima, M. Kushimoto, M. Deki, S. Nitta, S. F. Chichibu, and H. Amano:
"Internal quantum efficiency evaluation of LED by photocurrent measurement",
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017), Session: W-5 - UV materials and characterization, Banff, Canada, Oct.8-12 (2017), No.W5.4 (Late News oral).
229. S. F. Chichibu, K. Kojima, and A. Uedono:
"Optical and defect characteristics of m-plane Al1-xInxN epitaxial nanostructures",
8th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2017), Qingdao, China, Sep 24-27 (2017) No.MOCRI1 (Invited-oral).
228. S. F. Chichibu and K. Kojima:
"Periodic compositional undulation in the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a GaN substrate",
European Materials Research Society, 2017 Fall Meeting, Session P: Group III-Nitrides: fundamental research, optoelectronic devices and sensors, Warsaw University of Technology, Warsaw, Poland, Sep.18-21 (2017), No. P.10.2 (Invited-oral).
227. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"Recent progress of acidic ammonothermal growth of GaN",
10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X), Nuuksio Natinoal Park, Espoo, Finland, Sept.18.-22 (2017), No.11:00 (Invited-oral).
226. S. F. Chichibu, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono:
"Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in GaN",
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31-Aug. 4 (2017), No.TuB3-1 (Invited-oral).
225. S. F. Chichibu, K. Kojima, K. Furusawa, Y. Yamazaki, K. Hiramatsu, and H. Miyake:
"A way to achieve more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlGaN MQWs",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.B.8.2 (oral).
224. S. Sakai, T. Minami, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi:
"Quantum-Wire-Like Density of States in c-plane AlGaN Quantum Wells in Polarization-Crossover Composition Regionn",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.E.1.6 (poster).
223. K. Mochizuki, T. Nakamura, T. Arikawa, Y. Inoue, S. Usami, M. Kushimoto, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, H. Mimura, T. Aoki, and T. Nakano:
"Fabrication and evaluation of vertical type BGaN diodes by MOVPE using trimethylboron",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.D.1.12 (poster).
222. S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara:
"Spatio-Time-Resolved Cathodoluminescence studies of h-BN microcrystals",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.A.1.24 (poster).
221. S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono:
"Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.A.1.23 (poster).
220. K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
"A high internal quantum efficiency of the emission in GaN single crystals observed by omnidirectional photoluminescence (ODPL)",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.E.1.6 (oral).
219. K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu:
"Optical characteristics of c-plane AlGaN multiple-quantum-well light-emitting diode structures with macro-size steps",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.B.2.1 (oral).
218. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28 (2017), No.A2.2 (oral).
217. K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu:
"A theoretical proposal for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells",
The 18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN18), Wuerzburg, Germany, Jul.9-14 (2017), No.P3-008 (poster).
216. S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara:
"Spatio-time-resolved cathodoluminescence studies on hexagonal BN microcrystals",
The 2nd International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Apr.25-30 (2017), No.2-16h45 (Invited-oral).
215. K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
"IQE Quantification of Nitride Semiconductors - Omnidirectional photoluminescence (ODPL) measurement utilizing an integrating sphere - Recent progress of ammonothermal growth of GaN using acidic mineralizers",
The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'17), Yokohama, Japan, Apr.18-21 (2017), No.LED-LDC1-1 (Invited-oral).
214. M. Winkler, S. F. Chichibu, R. Collazo, Z. Sitar, M. D. Neumann, N. Esser, R. Goldhahn, and M. Feneberg:
"Anisotropic dielectric function of nonpolar AlGaN up to 20eV",
German Physical Society (DPG) Spring Meeting, Dresden, Germany,Session HL 50: Nitrides: Preparation and Characterization, Mar.19-24 (2017), No. HL 50.10 (oral).
213. S. F. Chichibu, M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, and T. Ishiguro:
"Recent progress of ammonothermal growth of GaN using acidic mineralizers",
Workshop on Frontier Photonic and Electronic Materials and Devices - 2017 German-Japanese-Spanish Joint Workshop, Hotel Punta Rotja, Mallorca, Spain, Mar.5-8 (2017) No. Mo-7 (Invited-oral).
212. S. F. Chichibu, K. Kojima, and A. Uedono:
"Origin of Shockley-Read-Hall nonradiative recombination centers in (Al,Ga)N",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2017, OE127 Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, San Francisco, USA, Jan.28-Feb.2, (2017), No.10124-20 (Invited-oral).
211. S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono:
"Photoluminescence characterization of ion-implanted and epitaxial Mg-doped GaN prepared on freestanding GaN substrates",
Materials Research Society, 2016 Fall Meeting, Symposium EM11: Wide-Bandgap Materials for Energy Efficiency-Power Electronics and Solid-State Lighting, Boston, MA, USA, Nov.27-Dec.2 (2016) No.EM11.2.03 (oral).
210. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orland, Florida, USA, Oct. 2-7 (2016), Session A1.1: Bulk Growth I: Bulk Crystal Growth, No.A1.1.07 (Invited-oral).
209. S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato:
"Defect-resistant emission properties of nonpolar m-plane Al1-xInxN epilayers for deep-ultraviolet to visible polarized-light-emitting vacuum fluorescent display devices",
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orland, Florida, USA, Oct. 2-7 (2016), Session B2.1: UV Devices I: UV Emitters, No.B2.1.06 (oral).
208. K. Kojima, T. Ohtomo, M. Saito, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Quantifying absolute value of quantum efficiency of radiation in high quality GaN single crystals",
International Workshop on Nitride Semiconductors 2016 (IWN2016), Orland, Florida, USA, Oct. 2-7 (2016), Session D1.5: Materials Characterization V: Characterization of GaN and InN, No.D1.5.01 (oral).
207. S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato:
"Defect-resistant luminescent probability of m-plane AlInN alloy films for deep ultraviolet and visible polarized light-emitters",
European Materials Research Society, 2016 Fall Meeting, Session F: AlN and AlGaN materials and devices, Warsaw University of Technology, Warsaw, Poland, Sep.19-22 (2016), No. F.08.1 (Invited-oral).
206. A. A. Yamaguchi, T. Minami, S. Sakai, K. Kojima, and S. F. Chichibu:
"Alloy-Compositional-Fluctuation Effects on Optical Gain Characteristics in AlGaN and InGaN Quantum-Well Laser Diodes",
The 25th International Semiconductor Laser Conference (ISLC2016), Kobe, Japan, Sep.12-15, (2016), No.WE60 (poster).
205. S. F. Chichibu, K. Kojima, Y. Yamazaki, and K. Furusawa:
"Metalorganic vapor phase epitaxy of pseudomorphic m-plane Al1-xInxN alloy films on a low defect density m-plane GaN substrate",
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya Congress Center, Nagoya, Japan, Aug. 7-12 (2016), No.Tu2-T09-5 (oral).
204. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya Congress Center, Nagoya, Japan, Aug. 7-12 (2016), No.Th1-T01-6 (oral).
203. S. M. Islam, V. Protasenko, H. (Grace) Xing, Debdeep Jena, K. Kojima, and S. F. Chichibu:
"Cathodoluminescence Spectroscopy of GaN/AlN Quantum Structures for sub-280 nm emission",
The International Workshop on UV Materials and Devices (IWUMD-2016), Peking, China, July 27-31 (2016), No.P-42 (poster).
202. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
9th International Conference on High Temperature Ceramic Matrix Composites (HTCMC-9) and Global Forum on Advanced Materials and Technologies for Sustainable Development (GFMAT 2016), G5: Advanced materials, technologies, and devices for electro-optical and medical applications, Tronto, Canada, Jun.26-30, (2016), No.G5-002-2016 (Invited-oral).
201. S. F. Chichibu, Y. Ishikawa, K. Furusawa, A. Uedono, H. Miyake, and K. Hiramatsu:
"Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1-xN structures grown by metalorganic vapor phase epitaxy on GaN and AlGaN structures",
The 43rd International Symposium on Compound Semiconductors (ISCS 2016), Toyama International Conference Center, Toyama, Japan, June 26-30 (2016), No.TuB2-1 (Invited-oral).
200. Q. Bao, M. Saito, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The 43rd International Symposium on Compound Semiconductors (ISCS 2016), Toyama International Conference Center, Toyama, Japan, Jun. 26-30 (2016), No.ThD2-3 (oral).
199. K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Recombination dynamics of hot carriers excited in a highly-doped m-plane GaN single crystal",
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), Nara, Japan, Mar. 28-31 (2016), No. TuP34 (poster).
198. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2016, OPTO, Gallium Nitride Materials and Devices XI, San Francisco, USA, Feb.13 -18, (2016), No.9748-9 (Invited-oral).
197. K. Shimada, D. Ito, K. Iwasaki, and S. F. Chichibu:
"First-principles calculations of structural, elastic, and piezoelectric properties in wurtzite InxAl1-xN",
The Sixth International Symposium on Growth of III-Nitrides (ISGN-6), Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13 (2015), No.We-B43 (oral+poster).
196. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, H. Ikeda, and K. Fujito:
"Metalorganic vapor phase epitaxy and time-resolved luminescence studies of pseudomorphic m-plane Al1-xInxN epitaxial films on a low defect density m-plane GaN substrate",
The Sixth International Symposium on Growth of III-Nitrides (ISGN-6), Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13 (2015), No.We-A43 (oral+poster).
195. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The Sixth International Symposium on Growth of III-Nitrides (ISGN-6), Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13 (2015), No.Tu-A28 (oral+poster).
194. K. Kojima, D. Kagaya, Y. Yamazaki, H, Ikeda, K. Fujito, and S. F. Chichibu:
"Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate",
The Sixth International Symposium on Growth of III-Nitrides (ISGN-6), Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13 (2015), No.Tu-B19 (oral+poster).
193. K. Kojima, K. Furusawa, E. Furukawa, M. Saito, Y. Tsukada, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu:
"Low resistivity m-plane freestanding GaN substrate with very low point defect concentration grown by hydride vapor phase epitaxy on an ammonothermal GaN seed crystal",
The Sixth International Symposium on Growth of III-Nitrides (ISGN-6), Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13 (2015), No.I-We-B2 (Upgraded Invited-oral).
192. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, T. Ishiguro, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method",
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, Aug.30-Sep.4 (2015), No.TuGO10 (oral).
191. S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, H. Ikeda, and K. Fujito:
"Time-resolved and spatially-resolved luminescence studies on ultraviolet to green luminescence peaks of m-plane Al1-xInxN epilayers grown on a low defect density m-plane GaN substrate",
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, Aug.30-Sep.4 (2015), No.TuBO5 (oral).
190. S. F. Chichibu, M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, and T. Ishiguro:
"High-Quality Bulk Crystal Growth of GaN by the Ammonothermal Method in a Supercritical NH3 Using Acidic Mineralizers",
Workshop on Frontier Photonic and Electronic Materials and Devices - 2015 German -Japanese-Spanish Joint Workshop, Shiran Kaikan, Kyoto University, Kyoto, Japan, July 11-14 (2015), No. Mo-14 (Invited-oral).
189. S. F. Chichibu:
"Wide bandgap III-nitride semiconductors for short wavelength light emitters",
UK Semiconductors 2015, Sheffield Hallam University, Sheffield, United Kingdom, July 1-2 (2015), Plenary Talk.
188. S. F. Chichibu, Y. Ishikawa, K. Furusawa, H. Miyake, and K. Hiramatsu:
"Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy",
15th International Workshop on Junction Technology (IWJT2015), Kyoto University (Uji Campus), Kyoto, Japan, June 11-12 (2015) No.S3-1 (Invited-oral).
187. S. F. Chichibu, Y. Ishikawa, S. Mita, J. Xie, R. Collazo, and Z. Sitar:
"Spatio-time-resolved cathodoluminescence studies on AlN epitaxial films",
Materials Research Society, 2014 Fall Meeting, Symposium AA: Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials for Energy Applications, Boston, MA, USA, Nov.30-Dec.5 (2014), No. AA10.01/T9.01 (Invited-oral).
186. Y. Yamazaki, K. Furusawa, K. Kojima, K. Nakahama, H. Miyake, K. Hiramatsu, and S.F. Chichibu:
"A strategy to improve the emission efficiency of Si-doped AlGaN multiple quantum wells by out-of-plane compositional modulations",
Materials Research Society, 2014 Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, Boston, MA, USA, Nov.30-Dec.5 (2014), No. T3.07 (oral).
185. S. F. Chichibu, Y. Ishikawa, T. Ohtomo, K. Furusawa, H. Miyake, and K. Hiramatsu:
"Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1-xN multiple quantum wells grown on an AlN template",
Materials Research Society, 2014 Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, Boston, MA, USA, Nov.30-Dec.5 (2014), No. T3.08 (oral).
184. K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Optical polarization properties of Al1-xInxN epilayers grown on m-plane freestanding GaN substrates",
Materials Research Society, 2014 Fall Meeting, Symposium AA: Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials for Energy Applications, Boston, MA, USA, Nov.30-Dec.5 (2014), No. AA10.03/T9.03 (oral).
183. M. Saito, Q. Bao, K. Kurimoto, D. Tomida, K. Kojima, Y. Yamazaki, Y. Kagamitani, R. Kayano, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Growth by Acidic Ammonothermal Method",
Materials Research Society, 2014 Fall Meeting, Symposium AA: Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials for Energy Applications, Boston, MA, USA, Nov.30-Dec.5 (2014), No. AA11.05/T10.05 (oral).
182. S. F. Chichibu, K. Furusawa, K. Hazu, Y. Ishikawa, T. Onuma, T. Ohtomo, Y. Yamazaki, K. Kojima, H. Ikeda, and K. Fujito:
"Epitaxial growth of thick m-plane Al1-xInxN epilayers exhibiting a dominant ultraviolet to green near-band-edge luminescence peak on a low defect density m-plane GaN substrate",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. WeGI21 (Invited-oral).
181. S. F. Chichibu, Y. Ishikawa, T. Ohtomo, K. Furusawa, A. Uedono, H. Miyake, K. Hiramatsu, S. Mita, J. Xie, R. Collazo, and Z. Sitar:
"Spatio-time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlxGa1-xN alloys",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. WeBI13 (Invited-oral).
180. H. Sumiyoshi, Y. Kangawa, S. F. Chichibu, M. Knetzger, E. Meissner, Y. Iwasaki, and K. Kakimoto:
"Cathodoluminescence studies of AlN/AlN(0001) grown by solid source solution growth method",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. TuGP57 (poster).
179. M. Saito, Q. Bao, D. Tomida, K. Furusawa, Y. Kagamitani, R. Kayano, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Growth by Acidic Ammonothermal Method",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. MoG04 (oral).
178. S. F. Chichibu, Y. Ishikawa, and K. Furusawa:
"Spatio-time-resolved cathodoluminescence studies on wide bandgap wurtzite AlN and GaN",
International Conference on Metamaterials and Nanophysics (METANANO2014) , Varadero, Cuba, Apr.22-May.1 (2014), No. Thu 24.04.2014 10:00 (Invited-oral).
177. S. F. Chichibu, H. Miyake, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hiramatsu, and A. Uedono:
"Effects of Si-doping on the near-band- edge emission dynamics of Al0.6Ga0.4N epilayers grown on AlN templates by metalorganic vapor phase epitaxy",
The IUMRS International Conference in Asia 2013 (IUMRS-ICA-2013), Indian Isntitute of Science, Bangalore, India, Dec. 16-20 (2013), No. Invited Talk (4) (Invited-oral).
176. S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, and K. Furusawa:
"Spatio-time-resolved cathodoluminescence studies on group-III-nitride semiconductors",
The 2nd International Conference on Advanced Electromaterials (ICAE2013), ICC Jeju, Jeju, Korea, Nov. 12-15 (2013), Symposium 4: Advanced LED and Lighting Technology, No. LT-3356 (Invited-oral).
175. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Local carrier dynamics in and around the sub-surface stacking faults in GaN studied using spatio-time-resolved cathodoluminescence equipped with a front-excitation configuration femtosecond pulsed photoelectron gun",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.16-20 (2013), Symposium J, No.18p-M6-12 (oral).
174. S. F. Chichibu and A. Uedono:
"Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.17 (2013), Symposium H: Smart Materials Design for Ultimate Functional Materials: Functional Core Concept, No.17p-M4-5 (Invited-oral).
173. D. Tomida, Q. Bao, M. Saito, Y. Kagamitani, K. Hazu, K. Qiao, T. Ishiguro, S. F. Chichibu, and C. Yokoyama:
"Effect of mineralizer species on the crystal growth of gallium nitride by the acidic ammonothermal method",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep. 16-20 (2013), Symposium J, No.17a-M6-3 (Invited-oral).
172. T. Miyanaga, T. Azuhata, K. Nakajima, H. Nagoya, K. Hazu, and S. F. Chichibu:
"Polarized XAFS study of Al K-edge for m-plane AlGaN films",
Light and Particle Beams in Materials Science 2013 (LPBMS2013), Ibaraki, Japan, Aug.29-31 (2013), No.P023 (Poster).
171. M. Saito, Q. Bao, D. Tomida, K. Hazu, K. Furusawa, Y. Kagamitani, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu:
"Effect of mineralizer species on the crystal growth of GaN in supercritical acidic ammonia",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.28 (2013), No.A6.09 (oral).
170. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:
"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO2 / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).
169. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Local emission dynamics in and around the sub-surface basal-plane stacking faults in GaN studied by the spatio-time-resolved cathodoluminescence method using a front-excitation photoelectron gun",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.AP2.36 (poster).
168. S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Furusawa, K. Hazu, S. Mita, J. Xie, R. Collazo, and Z. Sitar:
"Spatio-time-resolved cathodoluminescence studies on AlN epitaxial films grown on low dislocation density bulk AlN substrates prepared by the physical vapor transport method",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.C4.02 (oral).
167. S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Hazu, K. Furusawa, K. Hiramatsu, and A. Uedono:
"Effects of Si-doping on the recombination dynamics of excitons in AlGaN alloys studied by time-resolved cathodoluminescence",
European Materials Research Society, 2013 Spring Meeting, Session L: Group III nitrides, Congress Center, Strasbourg, France, May 29 (2013), No. L-91 (Invited-oral).
166. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Spatio-time-resolved cathodoluminescence studies on local exciton dynamics of a freestanding GaN substrate grown by hydride vapor phase epitaxy",
The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013), No. TuA1-4 (oral).
165. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu:
"Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan, Oct.14-19 (2012), No. MoP-GR-54 (poster).
164. C. Yokoyama, Q. Bao, H. Sawayama, T. Hashimoto, F. Sato, K. Hazu, Y. Kagamitani, T. Ishinabe, M. Saito, R. Kayano, D. Tomida, K. Qiao, S. F. Chichibu, and T. Ishiguro:
"Powder synthesis and ammonothermal crystal growth of GaN using Ga metal as a starting material",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session GR1 (Bulk I), No. GR1-4 (oral).
163. K. Shimada, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada, and T. Sota:
"Electronic structure and spontaneous polarization in ScxAlyGa1-x-yN alloys lattice-matched to GaN: A first-principles study",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), No. TuP-PR-41 (poster).
162. K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).
161. S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono:
"Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session PR6 (Defects), No. PR6-2 (oral).
160. S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono:
"Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy",
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), Joint international meeting: 222nd Meeting of ECS, The Electrochemical Society and 2012 Fall Meeting of The Electrochemical Society of Japan, Session J3: Materials for Solid State Lighting, Hawaii Convention Center and the Hilton Hawaiian Village, Honolulu, Hawaii, USA, Oct. 7-12 (2012), No.J3-3956 (Invited-oral).
159. S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono:
"Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy",
The 39th International Symposium on Compound Semiconductors (ISCS 2012), Santa Barbara, CA, USA, Aug.27-30 (2012), No. We-2B.2 (oral).
158. S. F. Chichibu and A. Uedono:
"Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Th-1i (Invited-oral).
157. K. Hazu, Y. Ishikawa, M. Tashiro, H. Namita, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu:
"Time-resolved photoluminescence studies on HVPE freestanding GaN substrates exhibiting record-long positron diffusion length",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Mo-51p (poster).
156. C. Yokoyama, Q. Bao, S. F. Chichibu, T. Ishiguro, and K. Qiao:
"Powder synthesis of GaN using Ga metal as a starting material",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Mo-17p (poster).
154. K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).
153. S. F. Chichibu, T. Onuma, K. Hazu, T. Sota, and A. Uedono:
"Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. E3.4 (oral).
152. H. Matsumoto, K. Suzaki, K. Fujito, S. Nagao, M. Shigeiwa, Y. Ishikawa, K. Hazu, and S. F. Chichibu:
"Annealing effects of thick-GaN crystals",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. PA1.11 (poster).
151. S. F. Chichibu, K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, and T. Ishiguro:
"Ammonothermal growth of low oxygen concentration GaN using a dry acidic mineralizer and fabrication of an Al0.2Ga0.8N/GaN heterostructure",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. A3.2 (oral).
150. Y. Ishikawa, K. Hazu, H. Matsumoto, K. Suzaki, K. Fujito, S. Nagao, M. Shigeiwa, and S. F. Chichibu:
"Spatio-time-resolved cathodoluminescence study on a freestanding GaN substrate grown by halide vapor phase epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. A2.5 (oral).
149. Y. Kagamitani, Q. Bao, S. F. Chichibu, K. Sugiyama, T. Fukuda, T. Ishiguro, and C. Yokoyama:
"GaN Growth by the Ammonothermal Method Using an Acidic Mineralizer",
The 5th Asian Conference on Crystal Growth and Crystal Technology (CGCT-5) - International Conference on Materials for Advanced Technologies (ICMAT-2011), International Convention and Exhibition Centre, Singapore, Jun.26 - Jul.1 (2011), No. EE5-9 (oral).
148. S. F. Chichibu, K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, and T. Ishiguro:
"Optical properties of GaN films and an AlGaN/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using gas-phase synthesized NH4Cl mineralizer",
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), Ise-Shima National Park, Toba, Mie, Japan, May 22-26 (2011) No. We-B4 (oral).
147. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys",
European Materials Research Society 2011 Spring Meeting (E-MRS2011), Nice, France, May9-13 (2011), No.F53 (Invited-oral).
146. K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, T. Ishiguro, and S. F. Chichibu:
"Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using acidic mineralizers",
European Materials Research Society 2011 Spring Meeting (E-MRS2011), Nice, France, May9-13 (2011), No.F24 (Oral).
145. A. Uedono, S. Ishibashi, S. F. Chichibu, and K. Akimoto:
"Point defects in GaN and related group-III nitrides studied by means of positron annihilation",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2011, OPTO, Gallium Nitride Materials and Devices VI, San Francisco, USA, Jan.22-27, (2011), No.7939-31 (Invited-oral); Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices VI, Edited by J.-I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, and E. Yoon, Vol. 7939, pp. 79390I 1-10 DOI: 10.1117/12.871611 (2011).
144. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Identification of extremely radiative nature of AlN by timeresolved photoluminescence and time-resolved cathodoluminescence measurements",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2011, OPTO, Gallium Nitride Materials and Devices VI, San Francisco, USA, Jan.22-27, (2011), No.7937-34 (Invited-oral).
143. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.C4.2 (oral).
142. M. Kagaya, P. Corfdir, J. -D. Ganièl, B. Deveaud-Plédran, N. Garndjean, and S. F. Chichibu:
"Spatio-Time-Resolved Cathodoluminescence Studies on the m-plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate by Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.A2.9 (oral).
141. K. Hazu, Y. Kagamitani, T. Onuma, T. Ishiguro, T. Fukuda, and S. F. Chichibu:
"Optical Properties of GaN Crystals Grown by Ammonothermal Method Using Acidic Mineralizers and Homoepitaxial Films Grown by Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.B1.10 (oral).
139. K. Hazu, M. Kagaya, T. Hoshi, T. Onuma, and S. F. Chichibu:
"Identification of cathodoluminescence peaks in m-plane AlxGa1-xN epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy",
The Third International Symposium on Growth of III-Nitrides (ISGN-3), Montpellier, France, Jul. 4-7 (2010), No.TU2-5 (oral).
138. S. F. Chichibu, Y. Kagamitani, K. Hazu, T. Onuma, T. Ishiguro, and T. Fukuda:
"Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy",
The Third International Symposium on Growth of III-Nitrides (ISGN-3), Montpellier, France, Jul. 4-7 (2010), No.MO2-4 (oral).
137. S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura:
"Impacts of point defects on the luminescence properties of (Al,Ga)N",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2010, OPTO, Gallium Nitride Materials and Devices V, San Francisco, USA, Jan.25-28, (2010), No.7620-7 (Invited-oral).
136. 尾沼猛儀, 羽豆耕治, 宗田孝之, 上殿明良, 秩父重英
「AlNエピタキシャル薄膜における励起子発光機構」
電子情報通信学会 レーザ・量子エレクトロニクス研究会/電子デバイス研究会/電子部品・材料研究会2009年11月19-20日 No.(7)
135. T. Onuma, T. Yamada, H. Yamane, and S. F. Chichibu:
"Capability of the bulk GaN single crystals spontaneously nucleated by the Na-flux method as an homoepitaxial substrate",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.B4 (oral).
134. K. Hazu, T. Hoshi, M. Kagaya, T. Onuma, and S. F. Chichibu:
"Polarization properties of m-plane AlxGa1-xN films suffering from in-plane anisotropic stress",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.Z6 (oral).
133. T. Onuma, K. Hazu, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, and S. F. Chichibu:
"Time-resolved photoluminescence study of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.JJ3 (oral).
132. S. F. Chichibu, K. Hazu, T. Hoshi, M. Kagaya, and T. Onuma:
"Spatially-resolved cathodoluminescence study on m-plane AlxGa1-xN films grown on m-plane free-standing GaN substrates",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.ThP41 (poster).
131. Y. Kagamitani, S. F. Chichibu, T. Onuma, K. Hazu, T. Fukuda, and T. Ishiguro:
"High purity GaN growth by the ammonothermal method using an acidic mineralizer",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.12.2 (oral).
130. T. Onuma, K. Hazu, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, and S. F. Chichibu:
"Time-resolved photoluminescence studies of excitons in AlN epilayers grown by metalorganic vapor phase epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.19.7 (oral).
129. T. Onuma, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta, and S. F. Chichibu:
"Optical Properties of m-plane (In,Ga)N Films Grown by Metalorganic Vapor Phase Epitaxy",
International Symposium of post-silicon materials and devices research alliance project, Osaka, Japan, Sep. 5-6 (2009), No.P-03 (poster).
128. K. Hazu, T. Hoshi, M. Kagaya, T. Onuma, K. Fujito, H. Namita, and S. F. Chichibu:
"Polarization properties of m-plane AlxGa1-xN films suffering from in-plane anisotropic stress",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-1 (oral).
127. S. F. Chichibu:
"Growth issues and optical properties of nonpolar (Al,In,Ga)N films and quantum wells",
The 3rd Japan-Germany Joint Workshop on Nanoelectronics 2009, Kyoto, Japan, Jan.21-23 (2009), Session 1-1 (Invited-oral).
126. K. Hazu, T. Hoshi, K. Oshita, M. Kagaya, K. Fujito, H. Namita, T. Onuma, and S. F. Chichibu:
"Polarized and spatially-resolved cathodoluminescence studies of m-plane AlxGa1-xN films grown on low defect density free-standing GaN substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. We5-B1: Opto 1: Materials and physics (Invited-oral).
125. S. F. Chichibu, H. Yamaguchi, Lu Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta:
"Optical properties of nearly stacking-fault-free m-plane GaN and InGaN films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Plenary Mo-III3 (oral).
124. S. F. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura:
"Impacts of dislocation bending and growth polar direction on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Mo1-P13: Substrates for nitride epitaxy (poster).
123. T. Onuma, K. Okamoto, H. Ohta, and S. F. Chichibu:
"Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers lased at 400 nm and 426 nm",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. We6-A5: Opto 2: Technology and devices (oral).
122. T. Hoshi, K. Oshita, M. Kagaya, K. Fujito, H. Namita, K. Hazu, T. Onuma, and S. F. Chichibu:
"Ammonia source molecular beam epitaxy of m-plane AlxGa1-xN films exhibiting negligible deep emission bands on low defect density free-standing GaN substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland,Oct.6-10 (2008), No. We2b-6: Challenging materials issues: AlN and high Al content alloys (oral).
121. T. Ishiguro, Y. Toda, S. Adachi, and S. F. Chichibu:
"Study on dephasing dynamics of exciton fine structures in GaN",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Th5-E4 : Opto 1: Materials and physics (oral).
120. S. F. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura:
"Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth"
The Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Izu, Japan, Jul. 6-9 (2008), No.Tu-55 (oral+poster).
119. S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta:
"Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates"
The Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Izu, Japan, Jul. 6-9 (2008), No.Tu-9 (oral+poster).
118. T. Onuma, K. Okamoto, H. Ohta, and S. F. Chichibu:
"Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers"
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2007), No.BB2 (oral).
117. S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta:
"Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates"
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2008), No.AA1 (oral).
116. S. F. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura:
"Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2008), No.H4 (oral).
115. S. F. Chichibu, T. Onuma, and A. Uedono:
"Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N"
The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, Japan, May 21-24 (2008), No. A-23PM1-I-1-BB-1K (Keynote-oral).
114. T. Onuma, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, T. Sota, A. Uedono, and S. F. Chichibu:
"Exciton fine structures in AlN epilayers grown by metalorganic vapor phase epitaxy",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.L1 (Invited-oral).
113. T. Onuma, H. Amaike, M. Kubota, K. Okamoto, H. Ohta, J. Ichihara, H. Takasu, and S. F. Chichibu:
"Built-in and external bias-induced quantum-confined Stark effects in a nonpolar m-plane In0.15Ga0.85N/GaN multiple quantum well light-emitting diode",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.G1 (Invited-oral).
112. K. Okamoto, T. Tanaka, M. Kubota, S. F. Chichibu, and H. Ohta:
"Present status of LEDs and LDs based on m-plane Gallium Nitride",
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. GaN optical devices No. ThA II-1 (Invited-oral).
111. S. F. Chichibu, T. Koyama, M. Sugawara, T. Hoshi, J. F. Kaeding, R. Sharma, S. Nakamura, and A. Uedono:
"Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by NH3 source molecular beam epitaxy",
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 7. GaN and related semiconductors No. WeA I-3 (oral).
110. S. F. Chichibu:
"Origin of defect-insensitive emission probability in (Al,In,Ga)N alloy films containing In",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.GG1 (Invited-oral).
109. J. Han, S. Chichibu, and H. Tang:
"III-Nitride Nanowires and Networks: Growth, Heterostructures, Epitaxial Alignment, and Applications",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.FF1 (Invited-oral).
108. K. Okamoto, H. Ohta, S. F. Chichibu, T. Tanaka, T. Tanabe, and H. Takasu:
"Progress of nonpolar m-plane InGaN/GaN laser diodes",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.CC1 (Invited-oral).
107. S. F. Chichibu, M. Kubota, H. Yamaguchi, L. Zhao, K. Okamoto, and H. Ohta:
"Homoepitaxial growth of nearly stacking-fault-free m-plane (In,Ga)N films by metalorganic vapor phase using low defect density free-standing substrates",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.W1 (oral).
106. T. Onuma, H. Amaike, M. Kubota, K. Okamoto, H. Ohta, J. Ichihara, H. Takasu, and S. F. Chichibu:
"Quantum-confined Stark effects in nonpolar m-plane InxGa1-xN/GaN multiple quantum well light-emitting diodes fabricated on low defect density free-standing substrates",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.U1 (oral).
105. T. Koyama, M. Sugawara, T. Hoshi, J. F. Kaeding, R. Sharma, S. Nakamura, A. Uedono, and S. F. Chichibu:
"Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by NH3 source molecular beam epitaxy",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), (poster).
104. T. Onuma, T. Koyama, K. Kosaka, K. Asai, S. Sumiya, T. Shibata, M. Tanaka, T. Sota, A. Uedono, and S. F. Chichibu:
"Observation of well-resolved bound, free, and higher order excitons in AlN epilayers grown by metalorganic vapor phase epitaxy",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.I4 (oral).
103. Q. Sun, S. -Y. Kwon, Z. Ren, J. Han, T. Onuma, and S. F. Chichibu:
"Microstructural Evolution in the Initial Growth Stage of m-Plane GaN on m-Plane SiC with a High-Temperature Grown AlN Buffer",
49th Electronic Materials Conference (EMC-49), University of Notre Dame, Indiana, USA, Jun.20-22 (2007), No.FF3 (oral).
102. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota:
"Raditive and nonradiative processes in (Al,In,Ga)N alloy films",
14th Semiconducting and Insulating Materials Conference (SIMC-XIV), Fayetteville, Arkansas, USA, May.15-20, (2007), No.W1222042 (Invited-oral).
101. J. Han, Z. Ren, T. Henry, Q. Sun, S. -Y. Kwon, Y. K. Song, A. V. Nurmikko, T. Onuma, S. F. Chichibu, and H. Tang:
"III-Nitride Nanowires: Growth, Heterostructures, Epitaxial Alignment, and Applications",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.We1330 (Invited-oral & poster).
100. T. Onuma, A. Chakraborty, M. McLaurin, B. A. Haskell, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu:
"Impacts of morphological features of GaN templates on the In-incorporation efficiency in nonpolar m-plane InxGa1-xN / GaN multiple quantum wells",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Tu1115 (oral & poster).
99. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota:
"Defect-insensitive emission probability universally seen in In-containing group-III nitride alloys",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Tu1030 (Invited-oral & poster).
98. T. Koyama, M. Sugawara, T. Hoshi, P. Cantu, J. F. Kaeding, R. Sharma, T. Onuma, S. Keller, U. K. Mishra, S. P. DenBaars, S. Nakamura,T. Sota, A. Uedono, and S. F. Chichibu:
"Relation between the near-band-edge emission intensity and structural defects in AlN epilayers",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Mo1125 (oral & poster).
97. S. F. Chichibu, T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars:
"Recombination dynamics and in-plane polarization of the emission in an m-plane InxGa1-xN/GaN blue light-emitting-diode fabricated on the free-standing GaN substrate",
International Workshop on Nitride Semiconductors 2006 (IWN2006), Kyoto, Japan, Oct.22-27 (2006), No.WeOD3-2 (oral).
96. T. Ishiguro, Y. Toda, S. Adachi, K. Hazu, T. Sota, and S. F. Chichibu:
"Coherent manipulation of A and B excitons in GaN",
International Workshop on Nitride Semiconductors 2006 (IWN2006), Kyoto, Japan, Oct.22-27 (2006), No.TuP2-10 (poster).
95. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota:
"Point defects and their influence on the luminescence efficiency in AlInGaN materials",
The IUMRS International Conference in Asia 2006 (IUMRS-ICA-2006), Hotel Shilla, Jeju, Korea, Sep. 10-14, (2006) No. 2-I-1 (Invited-oral).
94. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota:
"Defect-insensitive emission probability in group-III nitride alloys containing In",
International Symposium on Compound Semiconductors 2006 (ISCS 2006), Vancouver, Canada, Aug.13-17 (2006) No. T7 (Invited-oral).
93. M. Kubota, A. Uedono, Y. Ishihara, T. Onuma, A. Usui, and S. F. Chichibu:
"Thermally stable semi-insulating properties of Fe-doped GaN grown by hydride vapor phase epitaxy characterized by photoluminescence and positron annihilation techniques",
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), Miyazaki, Japan, May 22-25, (2006), No.Fr-B1.5 (oral).
92. T. Onuma, H. Yamaguchi, T. Suzuki, T. Nozaka, and S. F. Chichibu:
"Cross-sectional spatially-resolved cathodoluminescence study of cubic GaN grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates",
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), Miyazaki, Japan, May 22-25, (2006), No.We-A1.1 (oral).
91. M. Sugawara, T. Koyama, J. F. Kaeding, R. Sharma, Y. Uchinuma, T. Araya, T. Onuma, S. Nakamura, and S. F. Chichibu:
"Observation of a 208 nm emission at room temperature from AlN epilayers grown at high temperature by NH3-source molecular-beam epitaxy on GaN templates using low-temperature interlayers",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.D3.03 (oral).
90. T. Onuma, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, and S. F. Chichibu:
"Recombination dynamics of a 268 nm emission peak in strained Al0.53In0.11Ga0.36N multiple quantum wells grown on AlGaN templates on (0001) Al2O3",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.P1.33 (poster).
89. T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu:
"Prospective emission efficiency and in-plane light polarization of nonpolar (1-100) InxGa1-xN / GaN blue light-emitting-diodes fabricated on free-standing GaN substrates",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B1.05 (oral)
88. S. F. Chichibu, A. Uedono, T. Onuma, A. Chakraborty, B. A. Haskell, P. T. Fini, S. Keller, T. Sota, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura:
"Relation between the point defect density and quantum efficiency in (Al,In,Ga)N studied by time-resolved photoluminescence and slow positron annihilation techniques: defect-resistant emission of localized excitons in InGaN",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Tu-OP2-4 (oral).
87. T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, and S. F. Chichibu:
"Exciton dynamics in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Tu-P-103 (poster).
86. T. Koyama, M. Sugawara, Y. Uchinuma, J. F. Keading, R. Sharma, T. Onuma, S. Nakamura, and S. FChichibu:
"Strain-relaxation in NH3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Mo-P-033 (poster).
85. T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, and S. F. Chichibu:
"Recombination dynamics in nonpolar (11-20) InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. LL3 (oral).
84. T. Hashimoto, K. Fujito, F. Wu, B. A. Haskell, T. Onuma, S. F. Chichibu, J. S. Speck, and S. Nakamura:
"Characterization of GaN films grown on free-standing GaN seeds by ammonothermal growth",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. CC1 (oral).
83. J. Su, M. Gherasimova, G. Cui, J. Han, C. Broadbridge, A. Lehman, T. Onuma, S. F. Chichibu, Y. He, and A. V. Nurmikko:
"Epitaxially aligned GaN nanowires and nanobridges by MOCVD",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. Q7 (oral).
82. Y. Uchinuma, M. Sugawara, T. Koyama, J. F. Keading, R. Sharma, T. Onuma, S. Nakamura, and S. F. Chichibu:
"Atomically-flat AlN epitaxial layers grown on MOVPE GaN templates by NH3-source molecular-beam epitaxy"
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), Bozeman, Montana, USA, Jan.23-27, SESSION: Wide Bandgap Semiconductors (2005) No.We1505 (oral & poster).
81. T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, and S. F. Chichibu:
"Emission mechanisms in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth"
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), Bozeman, Montana, USA, Jan.23-27, SESSION: Wide Bandgap Semiconductors (2005) No.We1455 (oral & poster).
80. S. F. Chichibu, A. Uedono, T. Onuma, T. Koida, M. Sugiyama, B. A. Haskell, M. Sumiya, H. Okumura, T. Sota, J. S. Speck, S. P. DenBaars, and S. Nakamura:
"Direct comparison of defect density and photoluminescence lifetime in polar and nonpolar wurtzite and zincblende GaN studied by time-resolved photoluminescence and slow positron annihilation techniques"
International Workshop on Nitride Semiconductors 2004 (IWN2004), Pittsburg, USA, Jul.19-23, (2004), No.A10.3 (Oral).
79. T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura:
"Reduction of bound-state and nonradiative defect densities in nonpolar (11-20) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique"
International Workshop on Nitride Semiconductors 2004 (IWN2004), Pittsburg, USA, Jul.19-23, (2004), No.A10.5 (Oral).
78. T. Nosaka, M. Sugiyama, T. Suzuki, T. Koida, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono, and S. F. Chichibu:
"Reduction of point defect in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers"
The 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-12), Lahaina, Maui, Hawai, May 30-June 4, (2004), Wide Gap Nitrides No.31 (poster).
77. T. Koida, S. F. Chichibu, Y. Uchinuma, J. Kikuchi, K. R. Wang, M. Terazaki, T. Onuma, J. F. Keading, R. Sharma, and S. Nakamura:
"Reduction of surface crevice density in GaN homoepitaxial layers grown by NH3-source molecular beam epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NITRIDE GROWTH AND INTERFACES (2004) No.We0920 (oral & poster).
76. SF. Chichibu, T. Onuma, T. Koida, T. Kitamura, K. Nakajima, P. Ahmet, T. Aoyama, T. Chikyow, Y. Ishida, T. Sota, S. P. DenBaars, S. Nakamura, and H. Okumura:
"Recombination dynamics of localized excitons in cubic InxGa1-xN / GaN multiple quantum wells on 3C-SiC (001) substrates grown by rf-MBE"

combined with

SF. Chichibu, T. Onuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, and I. Akasaki:

"Recombination dynamics of localized excitons in Al1-xInxN epitaxial films grown by metalorganic vapor phase epitaxy",
International Conference on Materials for Advanced Technologies (ICMAT-2003), Singapore, Dec. 7-12, (2003), No. H-4-1-I (Invited-oral).
75. T. Shibata, M. Tanaka, K. Asai, S. Sumiya, M. Sakai, H. Katsukawa, O. Oda, H. Miake, K. Hiramatsu, H. Ishikawa, T. Egawa, T. Jimbo, and S. Chichibu:
"High-Quality AlN Epitaxial Films Grown using MOVPE and Their Applications",
Materials Research Society, 2003 Fall Meeting, Session Y: GaN and Related Alloys, Boston, MA, USA, Dec.1-5, (2003), No.Y3.6 (Invited-oral).
74. T. Nagata, P. Ahmet, T. Onuma, T. Koida, S. F. Chichibu, and T. Chikyow:
"Position Controlled GaN Nano-Structures Fabricated by Low Energy Focused Ion Beam System",
Materials Research Society, 2003 Fall Meeting, Session R: Radiation Effects and Ion Beam Processing of Materials, Boston, MA, USA, Dec.1-5, (2003) No.R9.39 (poster).
73. S. P. Lepkowski, T. Suski, H. Teisseyre, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, T.Onuma, T.Koida, and SF.Chichibu:
"Nonlinear elastic properties of cubic InGaN",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Th-B9.2 (oral).
72. T. Onuma, SF. Chichibu, Y. Uchinuma, T. Sota, S. Yamaguchi, S. Kamiyama, H. Amano, and I. Akasaki:
"Bandgap bowing and emission mechanisms in AI1-xInxN epitaxial films grown by metalorganic vapor phase epitaxy",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.We-A6.6 (oral).
71. T. Onuma, T. Koida, P. Cantu, J. F. Keading, S. Keller, T. Sota, S. P. DenBaars, U. K. Mishra, S. Nakamura, and S. F. Chichibu:
"Emission mechanisms in AIxGa1-xN films grown on sapphire (0001) substrates by low-pressure metalorganic vapor phase epitaxy",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Tu-P2.039 (poster).
70. A. Uedono, SF. Chichibu, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, and T. Mukai:
"Vacancy-type defects in GaN grown along different polar directions by MOVPE probed using monoenergetic positron beams",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.089 (poster).
69. T. Onuma, SF. Chichibu, T. Kitamura, K. Nakajima, P. Ahmet, T. Aoyama, T. Chikyow, Y. Ishida, T. Sota, S. P. DenBaars, S. Nakamura, and H. Okumura:
"Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN quantum wells grown on 3C-SiC (001) substrates by rf-MBE",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.067 (poster).
68. T. Onuma, Y. Uchinuma, E. -K. Suh, H. J. Lee, T. Sota, and SF. Chichibu:
"Carrier dynamics in InGaN/GaN quantum wells with composition-graded walls"
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.066 (poster).
67. S. Adachi, K. Hazu, T. Sota, S. F. Chichibu, S. Muto, K. Suzuki, and T. Mukai:
"Exciton-exciton correlation effects on FWM in GaN",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.053 (poster).
66. M. Sugiyama, T. Nosaka, K. Nakajima, P. Ahmet, T. Aoyama, T. Chikyow, and SF. Chichibu:
"Effects of deposition parameters of low-temperature GaN buffer layer on the structural and optical properties of cubic GaN epilayers on GaAs (001) substrates grown by MOVPE"
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Tu-P2.016 (poster).
65. S. F. Chichibu, A. Uedono, T. Onuma, T. Sota, P. Cantu, T. M. Katona, J. F. Keading, S. Keller, U. K. Mishra, S. Nakamura, and S. P. DenBaars:
"Recombination Dynamics in Strain-free AlxGa1-xN Alloys Studied by Time-Resolved Photoluminescence and Slow Positron Annihilation Techniques"
Materials Research Society, 2003 Fall Meeting, Session Y: GaN and Related Alloys, Boston, MA, USA, Dec.1-5, (2003), No.Y6.9 (oral).
64. SF. Chichibu, T. Onuma, T. Kitamura, Y. Ishida, T. Sota, S. P. DenBaars, S. Nakamura, and H. Okumura:
"Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN multiple quantum wells grown by rf-MBE on 3C-SiC substrate"
30th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-30), Salt Lake City, Utah, USA, Jan.19-23, SESSION: III-NITRIDES (2003) No.Mo1415 (oral & poster).
63. T. Suski, H. Teisseyre, S. P. Lepkowski, P. Perlin, T. Kitamura, Y. Ishida, H. Okumura, and S. F. Chichibu:
"Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells",
International Workshop on Nitride Semiconductors 2002 (IWN2002), Aachen, Germany, Jul.22-25, (2002), No.P3-354(poster). Physica Status Solidi (b) 234 (3), pp.759-763 (2002).
62. T. Suski, H. Teisseyre, S. P. Lepkowski, P. Perlin, H. Mariette, T. Kitamura, Y. Ishida, H. Okumura, and SF. Chichibu:
"Light Emission Versus Energy Gap in Group-III Nitrides. Hydrostatic Pressure Studies",
10th International Conference on High Pressure in Semiconductor Physics, Surrey, August, 5-8, (2002). (Invited-Oral); Physica Status Solidi (b) 235 (2), pp.225-231 (2003).
61. S. F. Chichibu, T. Onuma, T. Kitamura, T. Sota, S. P. DenBaars, S. Nakamura, and H. Okumura:
"Recombination dynamics of localized excitons in cubic phase InxGa1-xN/GaN multiple quantum wells on 3C-SiC/Si (001)",
International Workshop on Nitride Semiconductors 2002 (IWN2002), Aachen, Germany, Jul.22-25, (2002), No.A06-046(oral).
60. T. Suski, P. Perlin, S. P. Lepkowski, H. Teisseyre, I. Gorczyca, P. Prystawko, M. Leszczynski, N. Grandjean, J. Massies, T. Kitamura, Y. Ishida, S. F. Chichibu, and H. Okumura:
"Piezoelectric Field and its influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA, USA, Nov.26-Nov.30, (2001) No. (Oral); Materials Research Society Symposium Proceedings Series Vol.693, pp.487-499 (2002).
59. T. Onuma, S. F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, and M. Tanaka:
"Exciton Spectra of AlN Epitaxial Films",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA, USA, Nov.26-Nov.30, (2001) No.I8.6 (Oral); Materials Research Society Symposium Proceedings Series Vol.693, pp.515-520 (2002).
58. S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kuroda, A. Tackeuchi, T. Sota, T. Kitamura, H. Nakanishi, Y. Ishida, H. Okumura, S. Keller, S. P. DenBaars, U. K. Mishra, and S. Nakamura:
"Similarities in the Optical Properties of hexagonal and cubic InGaN Quantum Wells",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA, USA, Nov.26-Nov.30, (2001) No.I7.5 (Oral); Materials Research Society Symposium Proceedings Series Vol.693, pp.481-486 (2002).
57. S. F. Chichibu, M. Sugiyama, T. Azuhata, T. Kuroda, A. Tackeuchi, T. Sota, T. Kitamura, Y. Ishida, H. Okumura, H. Nakanishi, T. Mukai, S. P. DenBaars, and S. Nakamura,
"OPTICAL AND STRUCTURAL STUDIES IN WURTZITE AND ZINCBLENDE InGaN QUANTUM WELL STRUCTURES",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, USA, Jul.16-20 (2001), No. A13.5 (oral).
56. T. Kitamura, Y. Suzuki, Y. Ishida, X. -Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, and H. Okumura,
"Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, USA, Jul.16-20 (2001), No. P4.31 (poster). Physica Status Solidi (2001) (submitted).
55. T. Kitamura, Y. Ishida, X. -Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, and H. Okumura,
"Achievement of two-dimensional electron gas at cubic GaN/AlN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, USA, Jul.16-20 (2001), No. A2.2 (oral). Physica Status Solidi (2001) (submitted).
54. S. F. Chichibu, T. Azuhata, H. Okumura, A. Tackeuchi, T. Sota and T. Mukai:
"Localized exciton dynamics in InGaN quantum well structures",
8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), Sapporo, Hokkaido, Japan, Jun. 10-15 (2001), No. Fr2-2 (Invited-oral). Applied Surface Science (in press).
53. S. F. Chichibu, T. Azuhata, M. Sugiyama, T. Kitamura, Y. Ishida, H. Okumura, H. Nakanishi, T. Sota, T. Mukai, and S. Nakamura:
"Optical and structural studies in InGaN quantum well structure laser diodes",
28th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-28), Orlando, Florida, USA, Jan. 7-11 (2001), No.Mo0905 (Invited).
52. M. Sumiya, K. Mizuno, M. Furuwasa, M. Yoshimoto, S. Chichibu, and S. Nakamura:
"STRUCTURAL ANALYSIS IN REAL SPACE OF INxGAxN SINGLE QUANTUM WELLS BY COAXIAL IMPACT IONIZATION SCATTERING SPECTROSCOPY",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G11.43 (Poster).
51. A. Setoguchi, K. Yoshimura, M. Sumiya, A. Uedono, and S. F. Chichibu :
"IMPACT OF THE GROWTH POLAR DIRECTION ON THE EMISSION MECHANISMS OF GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G11.6 (Poster); Materials Research Society Symposium Proceedings Series Vol.639, pp.G.11.6.1-6 (2001).
50. S. F. Chichibu, T. Sota, and S. Nakamura:
"ROLE OF LOCALIZED QUANTUM WELL EXCITONS IN InGaN QUANTUM WELL STRUCTURE CORRELATED WITH MICROSTRUCTURAL ANALYSIS",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G9.3 (Oral); Materials Research Society Symposium Proceedings Series Vol.639, pp.G.9.3.1-6 (2001).
49. Y. Ito, T. Mita, N. Yamamoto, S. F. Chichibu, and S. P. DenBaars:
"Cathodoluminescence characterization of defects in GaN using a transmission electron microscope"
Proceedings of 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (Fukuoka, Japan) p.10 (2000).
48. T. Kitamura, S. H. Cho, Y. Ishida, T.I de, X. Q. Shen, H. Nakanishi, S. F. Chichibu, and H. Okumura:
"Growth and characterization of cubic InGaN/GaN multiquantum wells on 3C-SiC by RF MBE"
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, WA-1-6 (oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp. 93-96 (2000).
47. M. Sumiya, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto, and S. Nakamura:
"Correlation between Electroluminescence and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TA-2-6(oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp.575-578 (2000).
46. K. Torii, S. F. Chichibu, T. Deguchi, H. Nakanishi, T. Sota, and S. Nakamura:
"Photoreflectance spectra of excitonic polaritons in wurtzite GaN",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TA-1-4 (oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp.548-551 (2000).
45. S. F. Chichibu, T. Azuhata, T. Sota, T. Mukai, and S. Nakamura:
"Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TM-2-5 (oral); Institute of Pure and Applied Physics Conference Series Vol.1, pp.528-531 (2000).
44. T. Kitamura, S. H. Cho, Y. Ishida, T. Ide, X. Q. Shen, H. Nakanishi, S. Chichibu, and H. Okumura:
"Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE",
Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, Sept.10-15 (2000).
43. S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, and S. Nakamura:
"Impacts of internal electric field and localization of quantum well excitons in AlGaN/GaN/InGaN light emitting diodes",
International workshop on Physics of light-Matter Coupling in Nitrides, Saint-Nectaire, Clearmont-Ferrand, France, Oct.8-12, (2000) No.W-5 (Invited-oral).
42. S. F. Chichibu, A. Setoguchi, T. Azuhata, T. Deguchi, T. Sota, and S. Nakamura:
"Efficient emission against the internal piezoelectric field of InGaN/GaN/AlGaN single-quantum-well amber light-emitting diodes",
42th Electronic Materials Conference (EMC-42), Session C, Polarization and Piezoelectric Effects in Nitrides, Denver, Colorado, USA, Jun.21-Jun.23, 2000, No.C5 (oral).
41. S. F. Chichibu, A. Setoguchi, T. Azuhata, J. Mullhauser, M. Sugiyama, T. Mizutani, T. Deguchi, H. Nakanishi, T. Sota, O. Brandt, K. H. Ploog, T. Mukai, and S. Nakamura:
"Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction",
International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000), Berlin, Germany, Mar.6-10, 2000, No.ThC1 (oral).
40. S. Chichibu, T. Deguchi, A. Setoguchi, M. Sugiyama, H. Nakanishi, T. Sota, T. Mukai and S. Nakamura:
"Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells",
International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep.21-24, 1999, C-4-1, (oral) Extended Abstracts of SSDM'99 pp.198-199 (1999).
39. S. F. Chichibu, A. Shikanai, T. Deguchi, A. Setoguchi, R. Nakai, K. Wada, S. P. DenBaars, T. Sota, T. Mukai, and S. Nakamura:
"Comparison of optical properties in GaN and InGaN quantum well structures",
International Symposium on Photonics and Applications (ISPA'99), Design, Fabrication, and Characterization of Photonic Devices, Singapore, sponsered by SPIE, Nov.29-Dec.3, 1999, (oral) ; Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Vol. 3896, pp. 98-106,(1999).
38. H. Marchand, J. P. Ibbetson, P. T. Fini, S. Chichibu, S. J. Rosner, S. Keller, S. P. DenBaars. J. S. Speck, and U. K. Mishra:
"Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition",
The 25th International Symposium on Compound Semiconductors, Nara, Japan, Oct.12-16, 1998 (poster). Proceedings of the 25th International Symposium on Compound Semiconductors, edited by H.Hirayama (IOP Publishing Co., Toyko, 1999); Institute of Physics Conference Series No.162, Chapter 12 pp.681-686
37. T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura:
"Quantum-Confined Stark Effect in an AlGaN/GaN Single Quantum Well Structure",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9, 1999, No. Tu_P081 (poster).
36. H. Okumura, T. Koizumi, Y. Ishida, H. Yaguchi, S. Yoshida, and S. Chichibu:
"Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9, 1999, No. Tu_P048 (poster).
35. S. F. Chichibu, T. Deguchi, T. Sota, S. P. DenBaars, and S. Nakamura:
"Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9,1999, No. Tu_14 (oral).
34. S. Keller, S. B. Fleischer, S. F. Chichibu, J. E. Bowers, U. K. Mishra, and S. P. DenBaars:
"Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9,1999, No. Mo_04 (oral).
33. S. F. Chichibu, T. Deguchi, T. Sota, S. P. DenBaars, and S. Nakamura:
"Behavior of quantum well excitons under internal fields of GaN/AlGaN and InGaN/GaN/AlGaN quantum well structures",
41th Electronic Materials Conference (EMC-41), Session R (Wide-band-gap III-V Materials (GaN, AlN, AlGaN): Growth, Processing, Characterization, Theory, and Devices), Santa Barbara, USA, Jun.30-Jul.2, 1999 (oral).
32. S. Keller, S. F. Chichibu, M. Minski, E. Hu, U. Mishra, and S. DenBaars:
"Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells",
The 9th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), La Jolla, California, USA, May 30-Jun.4, 1998 (oral).
31. S. Chichibu, T. Sota, K. Wada, S. P. DenBaars, and S. Nakamura:
"Spectroscopic studies in InGaN quantum wells",
Materials Research Society, 1998 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.30-Dec.4, 1998, No. G2.7 (Invited).
30. Marchand, J. P. Ibbetson, P. T. Fini, S. Chichibu, S. J. Rosner, S. Keller, S. P. DenBaars. J. S. Speck, and U. K. Mishra:
"Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition",
The 25th International Symposium on Compound Semiconductors, Nara, Japan, Oct.12-16, 1998 (poster).
29. S. Chichibu, L. Sugiura, J. Nishio, A. Setoguchi, H. Nakanishi, and K. Itaya:
"Effective Bandgap Separation in InGaN Epilayers Grown by Metalorganic Chemical Vapor Deposition",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P45 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo, 1998) pp.616-619.
28. S. Chichibu, H. Marchand, S. Keller, P. Fini, J. Ibbetson, M. Minsky, S. Fleischer, J. Speck, J. Bowers, E. Hu, U. Mishra, S. DenBaars, T. Deguchi, T. Sota, and S. Nakamura:
"Exciton Localization in InGaN Quantum Wells Grown on Lateral Epitaxially Overgrown (LEO) GaN",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P42 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo,1998) pp.604-607.
27. S. Chichibu, D. Cohen, M. Mack, A. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. Bowers, U. Mishra, L. Coldren, D. Clarke, and S. DenBaars:
"Improved Properties of InGaN Multiple Quantum Well Purplish-Blue Laser Diodes by Si-Doping in the InGaN Barriers",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-03 (oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo, 1998) pp.381-384.
26. S. Chichibu, A. Abare, M. Mack, M. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, S. Fleischer, S. Keller, J. Speck, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, K. Wada, T. Sota, and S. Nakamura:
"Optical properties of InGaN quantum wells"
European Materials Research Society, 1998 Spring Meeting, Session L: III-V Nitrides, Strasbourg, France, Jun.16-19, 1998, No. L-IV.1 (Invited-oral).
25. S. Chichibu, T. Deguchi, T. Sota, K. Wada, and S. Nakamura:
"Exciton localization in InGaN quantum well devices",
25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25), Salt Lake City, Utah, USA, Jan.18-22, 1998, SESSION: III-NITRIDES No.Mo1030 (Invited-oral & poster).
24. S. Chichibu, T. Deguchi, T. Sota, K. Wada, and S. Nakamura:
"LOCALIZED EXCITONS IN InGaN",
Materials Research Society, 1997 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.1-5, 1997, No. D12.1 (Invited-oral). Materials Research Society Symposium Proceedings Series Vol.482,p.613-624.
23. T. Deguchi, A. Shikanai, T. Sota, S. Chichibu, and S. Nakamura:
"Gain Spectroscopy of Continuous Wave InGaN Multi-Quantum Well Laser Diodes with Different Degree of Compositional Fluctuation",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, S-8(oral).
22. M. Arita, S. Chichibu, H. Nakanishi, T. Deguchi, T. Azuhata, T. Sota, and S. Nakamura:
"Exciton-Phonon Interaction in Wurtzite GaN Epilayers",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Th1-6(oral).
21. H. Hamaguchi, G. Feuillet, H. Okumura, Y. Ishida, S. Chichibu, H. Nakanishi, and S. Yoshida:
"Surface Reconstructions of Cubic GaN on 3C-SiC and GaAs",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-55(poster).
20. M. Sugiyama, S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, H. Amano, and I. Akasaki:
"Photoreflectance and Photoluminescence Spectra of Tensile-Strained Wurtzite GaN Epilayers",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-33(poster).
19. T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, and S. Nakamura:
"Optical Absorption Coefficient in Wurtzite GaN",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-32(poster).
18. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Bright Emissions due to Recombination of Localized Excitons in InGaN Bulk and Quantum Well Devices",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu3-2(oral).
17. H. Okumura, H. Hamaguchi, T. Koizumi, K. Balakrishnan, Y. Ishida, M. Arita, S. Chichibu, H. Nakanishi, T. Nagamoto, and S. Yoshida:
"Growth of Cubic III-nitrides by Gas Source MBE Using Atomic Nitrogen Plasma : GaN, AlGaN and AlN",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu1-3(oral) .
16. K. Iwata, H. Asahi, K. Asami, A. Ishida, R. Kuroiwa, H. Tampo, S. Gonda, and S. Chichibu:
"Promising characteristics of GaN layers grown on amorphous silica substrates by gas source MBE",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu1-2(oral).
15. S. Chichibu, K. Wada, M. Arita, T. Sota, and S. Nakamura:
"Monochromated Cathodeluminescence Mapping of InGaN Single Quantum Wells",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P1-LN-11(late news-poster).
14. H. Okumura, K. Balakrishnan, H. Hamaguchi, T. Koizumi, S. Chichibu, H. Nakanishi, T. Nagamoto, and S. Yoshida:
"Analysis of MBE Growth Mode for GaN Epilayers by RHEED",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P1-50(poster).
13. S. Yoshida, H. Okumura, Y. Ishida, K. Balakrishnan, H. Hamaguchi, S. Chichibu, and H. Nakanishi:
"MBE GROWTH MONITORING OF CUBIC AND HEXAGONAL GaN BY SURFACE RECONSTRUCTION",
The 4th IUMRS International Conference in Asia, Makuhari, Japan, Sept.16-18, 1997.
12. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Localized Excitons in InGaN Quantum Wells",
16th Electronic Materials Symposium, Minou, Japan, Jul.9-11 (1997). Session H10, pp.219-222.
11. S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura:
"Biaxial Strain Effect on the Exciton Resonance Energies of h-GaN Heteroepitaxial Layers Grown by MOVPE",
15th Electronic Materials Symposium, Izu-Nagaoka, Japan, Jul.10-12 (1996). Session C20, pp.77-80.
10. H. Okumura, H. Hamaguchi, K. Ohta, G. Feuillet, K. Barakrishnan, Y. Ishida, S. Chichibu, H. Nakanishi, T. Nagamoto, and S. Yoshida:
"Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers",
International Conference on Silicon Carbide, III - Nitrides and Related Materials 1997.
9. T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, and S. Nakamura:
"GAIN SPECTRA IN CW InGaN/GaN LASER DIODES",
European Materials Research Society, 1997 Spring Meeting, Session L: ‡V-‡X Nitrides, Strasbourg, France, Jun.16-20, 1997, No. L-XIII-3 (Invited).
8. T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, N. Sarukura, H. Ohtake, T. Yamanaka, and S. Nakamura:
"NANOSECOND PUMP-AND-PROBE STUDY OF WURTZITE GaN"
European Materials Research Society, 1997 Spring Meeting, Session L: III-V Nitrides, Strasbourg, France, Jun.16-20, 1997, No. L-V-2 (Invited).
7. T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, M. Yamaguchi, T. Yagi, and S. Nakamura:
"VALENCE BAND PHYSICS IN WURTZITE GaN",
Materials Research Society, 1997 Spring Meeting, Session D: Gallium Nitride and Related Materials, San Francisco, CA, USA, Mar.31-Apr.3, 1997, No. D5.3 (Invited). Materials Research Society Symposium Proceedings Series
6. H. Okumura, K. Balakrishnan, G. Feuillet, Y. Ishida, S. Yoshida, K. Ohta, H. Hamaguchi, and S. Chichibu:
"STRUCTURAL AND OPTICAL CHARACTERIZATION OF HIGH-QUALITY CUBIC GaN EPILAYERS GROWN ON GaAs AND 3C-SiC SUBSTRATES BY GAS SOURCE MBE USING RHEED IN-SITU MONITORING",
Materials Research Society, 1996 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.2-6, 1996, No. N3.31. Materials Research Society Symposium Proceedings Series Vol.449,p.435-440.
5. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura
"RECOMBINATION OF LOCALIZED EXCITONS IN InGaN SINGLE- AND MULTI-QUANTUM WELL STRUCTURES",
Materials Research Society, 1996 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.2-6, 1996, No. N1.7. Materials Research Society Symposium Proceedings Series Vol.449,p.653-658.
4. S. Chichibu, H. Okumura, G. Feuillet, S. Nakamura, and S. Yoshida:
"Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films",
International Conference on Solid State Devices and Materials, Yokohama, Japan, Aug.26-29, 1996, C-2-3, Extended Abstract pp.227-229.
3. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Localized excitons in InGaN single- and multi-quantum well structures",
38th Electronic Materials Conference (EMC-38), Session W (Optical and Electrical Characterization of III-V nitrides), Late News W10, Santa Barbara, USA, Jun.26-28,1996.
2. S. Chichibu, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, and S. Nakamura:
"Exciton Structures in h-GaN Heteroepitaxial Layers Grown on Sapphire Substrates by MOCVD",
38th Electronic Materials Conference (EMC-38), Session W (Optical and Electrical Characterization of III-V nitrides), W2, Santa Barbara, USA, Jun.26-28,1996.
1. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura:
"Contribution of Excitons in the Photoluminescence Spectra of h-GaN Epitaxial Layers Grown on Sapphire Substrates by TF-MOCVD",
International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Mar. 5-7,1996. We-19: Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1996) pp.202-205.