Year |
Authors |
Title |
Journal |
Vol., Page |
Link |
2012
-1
|
B.Gil, D.Felbacq, and S.F.Chichibu
|
Exciton binding energies in chalcopyrite semiconductors
|
Physical Review B
|
85,
pp.075205 1-5
|
PRB
(pdf)
|
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2007
-1
|
秩父重英
|
カルコパイライト半導体のエピタキシャル成長
|
応用物理学会 多元系機能材料研究会
20周年記念誌「20年の歩み」
依頼原稿
|
pp.66-69 (2007年9月21日)
|
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2005
-1
|
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma
|
Fabrication of p-CuGaS2/n-ZnO:Al
heterojunction light-emitting diode grown by metalorganic vapor phase
epitaxy and helicon-wave-excited-plasma sputtering methods
|
Journal of Physics and Chemistry of Solids
|
66,
pp.1868-1871
|
JPCS
(pdf)
|
|
|
|
|
|
|
2004
-1
|
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma
|
Greenish-white electroluminescence from
p-type CuGaS2 heterojunction diodes using n-type ZnO as an
electron injector
|
Applied Physics Letters
|
85,
pp.4403-4405
|
APL
(pdf)
|
|
|
|
|
|
|
2003
-2
|
SF.Chichibu, Y.Harada, M.Sugiyama, and
H.Nakanishi
|
Metalorganic vapor phase epitaxy of Cu(AlxGa1-x)(SySe1-y)2chalcopyrite
semiconductors and their band offsets
|
Journal of Physics and Chemistry of Solids
|
64,
pp.1481-1489
|
JPCS
(pdf)
|
2003
-1
|
M.Sugiyama, R.Nakai, H.Nakanishi, and
SF.Chichibu
|
Interface Fermi level pinning in a
Cu/p-CuGaS2 Schottly diode
|
Journal of Physics and Chemistry of Solids
|
64,
pp.1787-1790
|
JPCS
(pdf)
|
|
|
|
|
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|
2002
-3
|
M.Sugiyama, R.Nakai, H.Nakanishi, and
SF.Chichibu
|
Fermi level pinning at the metal / p-type
CuGaS2 interfaces
|
Journal of Applied Physics
|
92,
pp.7317-7315
|
JAP
(pdf)
|
2002
-2 |
Y.Harada,
H.Nakanishi, and
S.F.Chichibu |
Bandgap energy bowing and residual strain in CuAl(SxSe1-x)2
chalcopyrite
semiconductor epilayers grown by low-pressure metalorganic
vapor phase epitaxy. |
Journal of Applied Physics |
91,
pp.5909-5914 |
JAP
(pdf) |
2002
-1 |
S.F.Chichibu, S.Shirakata, and H.Nakanishi |
Metalorganic Vapor Phase Epitaxy of Cu(Al,Ga,In)(S,Se)2
Chalcopyrite Semiconductors |
Institute of Pure and Applied Physics Books |
1,
pp91-97 |
IPAP
(pdf) |
|
|
|
|
|
|
2001
-3 |
Yoshiyuki Harada, Hisayuki Nakanishi, and Shigefusa F.
Chichibu |
Green to ultraviolet photoluminescence from CuAlxGa1-xS2
chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure
metalorganic vapor phase epitaxy |
Jounal of Crystal Growth |
336,
pp.473-480 |
JCG
(pdf) |
2001
-2 |
Yoshiyuki Harada, Hisayuki Nakanishi,
Shigefusa F. Chichibu |
Structural studies of Cu–III–VI2 chalcopyrite
semiconductor heteroepitaxial
films grown by low-pressure metalorganic vapor phase epitaxy |
Journal of Applied Physics |
89,
pp5406-5413 |
JAP
(pdf) |
2001
-1 |
Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu |
Experimental Determination of Valence Band Discontinuities
at
Cu(Al,Ga)(S,Se)2/GaAs(001) Heterointerfaces Using
Ultraviolet
Photoemission Spectroscopy |
Japanese Journal of
Applied Physics |
40,
pp.L428 - L430 |
JJAP
(pdf) |
|
|
|
|
|
|
2000
-3 |
Ravhi S.Kumar, A.Sekar, N.Victor Jaya, S.Natarajan and
S.Chichibu |
Structural studies of CuAlSe2 and CuAlS2
chalcopyrites at high pressures |
Journal of Alloys and Compounds |
312,
pp.4-8 |
JAC
(pdf) |
2000
-2 |
S.Shirakata, S.Chichibu, H.Miyake, and K.Sugiyama |
Optical properties of CuGaSe2 and CuAlSe2
layers
epitaxially grown on Cu(In0.04Ga0.96)Se2
substrates |
Journal of Applied Physics |
87,
pp.7294-7302 |
JAP
(pdf) |
2000
-1 |
S.Shirakata and S.Chichibu |
Photoluminescence of CuGaS2 epitaxial layers
grown by metalorganic vapor phase epitaxy |
Journal of Applied Physics |
87,
pp.3793-3799 |
JAP
(pdf) |
|
|
|
|
|
|
1997
-4 |
S.Shirakata, S.Chichibu, and S.Isomura |
Room-Temperature Photoreflectance of CuAlxGa1-xSe2
Alloys |
Japanese Journal of
Applied Physics |
36,
pp.7160-7161 |
JAP
(pdf) |
1997
-3 |
S.Shirakata, S.Chichibu, and S.Isomura |
Crystal Growth and Optical Properties of CuAl(SxSe1-x)2
Alloys |
Japanese Journal of
Applied Physics |
36,
pp.6645-6649 |
JJAP
(pdf) |
1997
-2 |
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, H.Miyake,
and K.Sugiyama |
Improved quality of CuGaSe2 and CuAlSe2
epilayers
grown on CuGa0.96In0.04Se2
substrates |
Applied Physics Letters |
71,
pp.533-535 |
APL
(pdf) |
1997
-1 |
S.Chichibu, S.Shirakata, S.Isomura, and H.Nakanishi |
Visible and Ultraviolet Photoluminescence from Cu-III-VI2
Chalcopyrite
Semiconductors Grown by Metalorganic Vapor Phase Epitaxy |
Japanese Journal of Applied Physics |
36,
pp.1703-1714 |
JJAP
(pdf) |
|
|
|
|
|
|
1996
-10 |
S.Chichibu |
Excitonic emissions from CuAlS2 and CuAlSe2 |
OYO BUTSURI [in Japanese] |
65,
pp.74-77 |
|
1996
-9 |
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, Y.Harada,
S.Matsumoto, H.Higuchi, and T.Kariya |
Preparation and
characterization of CuAlxGa1-xSe2
alloy epilayers grown by low-pressure metalorganic vapor phase epitaxy |
Journal of Applied Physics |
80,
pp.3338-3345 |
JAP
(pdf) |
1996
-8 |
M.Takahashi, A.Takahashi, R.Takei, N.Manba, H.Nakanishi,
T.Irie, and S.Chichibu |
Growth of ZnInGaS4 Single Crystals by Vertical
Bridgman Method |
Crystal Research and Technology |
31,
pp.S73-76 |
|
1996
-7 |
S.Chichibu, M.Takahashi, N.Manba, A.Takahashi, R.Takei,
H.Nakanishi, and T.Irie |
X-Ray Photoelectron Spectroscopy Analysis of
CdS/CdInGaS4 Heterointerface |
Crystal Research and Technology |
31,
pp.S309-312 |
|
1996
-6 |
T.Wakiyama, S.Matsumoto, and S.Chichibu |
Crystal Growth of AgGaS2 by the Vertical
Bridgman Method |
Crystal Research and Technology |
31,
pp.S53-56 |
|
1996
-5 |
S.Shirakata, S.Chichibu, and S.Isomura |
Photoluminescence of Heteroepitaxial CuGaS2 Layers |
Crystal Research and Technology |
31,
pp.S717-720 |
|
1996
-4 |
S.Chichibu, S.Shirakata, K.Haga, and H.Nakanishi |
Low-Pressure Metalorganic Chemical Vapor
Depiition of CuAlS2 Epilayers |
Crystal Research and Technology |
31,
pp.S281-284 |
|
1996
-3 |
T.Azuhata, T.Terasako, K.Yoshida, T.Sota, K.Suzuki, and
S.Chichibu |
Lattice dynamics of CuAlS2 and CuAlSe2 |
Physica B |
219/220,
pp.496-498 |
PB
(pdf) |
1996
-2 |
A.Yamada, Y.Makita, S.Niki, A.Obara, P.Fons, H.Shibata,
M.Kawai, S.Chichibu, and H.Nakanishi |
Band-edge photoluminescence of
CuGaSe2 films grown by molecular beam epitaxy |
Journal of Applied Physics |
79,
pp.4318-4322 |
JAP
(pdf) |
1996
-1 |
S.Shirakata and S.Chichibu |
Photoreflectance of Cu-based I-III-VI2
heteroepitaxial layers grown by metalorganic chemical vapor deposition |
Journal of Applied Physics |
79,
pp.2043-2054 |
JAP
(pdf) |
|
|
|
|
|
|
1995
-4 |
S.Chichibu, S.Shirakata, M.Uchida, Y.Harada, T.Wakiyama,
S.Matsumoto, H.Higuchi, and S.Isomura |
Heteroepitaxial Growth of
CuGaS2 Layers by Low-Pressure Metalorganic Chemical
Vapor Deposition |
Japanese Journal of Applied Physics |
34,
pp.3991-3997 |
JJAP
(pdf) |
1995
-3 |
S.Chichibu, H.Nakanishi, and S.Shirakata |
Ultraviolet photoluminescence from CuAlS2
heteroepitaxial layers grown by low-pressure
metalorganic chemical vapor deposition |
Applied Physics Letters |
66,
pp.3513-3515 |
APL
(pdf) |
1995
-2 |
S.Chichibu, S.Shirakata, S.Isomura, Y.Harada, M.Uchida,
S.Matsumoto, and H.Higuchi |
Photoluminescence studies in CuAlSe2 epilayers
grown
by low-pressure metalorganic chemical vapor deposition |
Journal of Applied Physics |
77,
pp.1225-1232 |
JAP
(pdf) |
1995
-1 |
S.Chichibu and A.Kamata |
Raman spectra of CuAlSe2 heteroepitaxial layers |
Journal of Applied Physics |
77,
pp.5470-5472 |
JAP
(pdf) |
|
|
|
|
|
|
1994
-4 |
S.Chichibu, Y.Harada, M.Uchida, T.Wakiyama, S.Matsumoto,
S.Shirakata, S.Isomura, and H.Higuchi |
Heteroepitaxy and
characterization of CuGaSe2 layers grown by
low-pressure metalorganic chemical vapor deposition |
Journal of Applied Physics |
76,
pp.3009-3015 |
JAP
(pdf) |
1994
-3 |
S.Chichibu, S.Shirakata, A.Ogawa, R.Sudo, M.Uchida, Y.Harada,
T.Wakiyama, M.Shishikura, S.Matsumoto, and S.Isomura |
Growth of Cu(AlxGa1-x)SSe penternary
alloy crystals by iodine chemical vapor transport method |
Journal of Crystal Growth |
140,
pp.388-397 |
JCG
(abst) |
1994
-2 |
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura |
Zn-related Donor-Acceptor Emission in CuAlSe2
Epitaxial Layers |
Japanese Journal of Applied Physics |
33,
pp.L345-L347 |
JJAP
(pdf) |
1994
-1 |
S.Chichibu, R.Sudo, N.Yoshida, Y.Harada, M.Uchida,
S.Matsumoto, and H.Higuchi |
Low-Pressure Metalorganic Chemical Vapor
Deposition of a CuGaSe2/CuAlSe2
Heterostructure |
Japanese Journal of Applied Physics |
33,
pp.L286-L289 |
JJAP
(pdf) |
|
|
|
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|
1993
-10 |
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura |
Photoreflectance Characterization of CuAlSe2
Heteroepitaxial Layer Grown
by Metalorganic Chemical Vapor Deposition |
Japanese Journal of Applied Physics Supplment |
32-3,
pp.494-496 |
JJAP
(pdf) |
1993
-9 |
A.Ogawa, R.Sudo, A.Gupta, S.Shirakata, S.Chichibu,
S.Matsumoto, and S.Isomura |
Preparation and Characterization of
Cu(Al,Ga)(S,Se)2 Penternary Alloys |
Japanese Journal of Applied Physics Supplment |
32-3,
pp.588-589 |
JJAP
(pdf) |
1993
-8 |
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada,
S.Matsumoto,
H.Higuchi, and S.Isomura |
2.51eV Donor-Acceptor Pair
Photoluminescence from Zn-doped CuAlSe2 Epilayer
Grown by Low-Pressure Metalorganic Chemical Vapor Deposition |
Japanese Journal of Applied Physics Supplment |
32-3,
pp.531-533 |
JJAP
(pdf) |
1993
-7 |
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada,
S.Matsumoto,
H.Higuchi, and S.Isomura |
Low-Pressure Metalorganic
Chemical Vapor Deposition of CuAlSe2 Epitaxial Films |
Japanese Journal of Applied Physics Supplment |
32-3,
pp.139-141 |
JJAP
(pdf) |
1993
-6 |
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi |
Excitonic photoluminescence in a CuAlSe2
chalcopyrite
semiconductor grown by low-pressure metalorganic chemical
vapor
deposition |
Journal of Applied Physics |
74,
pp.6446-6445 |
JAP
(pdf) |
1993
-5 |
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi |
2.51 eV photoluminescence from Zn-doped CuAlSe2
epilayers grown by low-pressure metalorganic chemical vapor deposition |
Applied Physics Letters |
62,
pp.3306-3308 |
APL
(pdf) |
1993
-4 |
S.Chichibu, S.Shirakata, A.Iwai, S.Matsumoto, H.Higuchi and
S.Isomura |
CuAlSe2 chalcopyrite epitaxial layers grown by
low-pressure metalorganic chemical vapor deposition |
Journal of Crystal Growth |
131,
pp.551-559 |
JCG
(abst) |
1993
-3 |
S.Shirakata, S.Chichibu, R.Sudo, A.Ogawa, S.Matsumoto and
S.Isomura |
Photoreflectance and Photoluminescence Studies of
CuAlxGa1-xSe2 Alloys |
Japanese Journal of Applied Physics |
32,
L1304-L1307 |
JJAP
(pdf) |
1993
-2 |
S.Chichibu, A.Iwai, S.Matsumoto and H.Higuchi |
LP-MOCVD growth of CuAlSe2 epitaxial layers |
Journal of Crystal Growth |
126,
pp.635-642 |
JCG
(abst) |
1993
-1 |
S.Shirakata, S.Chichibu, S.Matsumoto and S.Isomura |
Photoreflectance Study of CuAlSe2
Heteroepitaxial Layers |
Japanese Journal of
Applied Physics |
32,
L167-L169 |
JJAP
(pdf) |
|
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1991
-1 |
S.Chichibu, M.Shishikura, J.Ino and S.Matsumoto |
Electrical and optical properties of CuAlSe2
grown by iodine chemical vapor transport |
Journal of Applied Physics |
70,
pp.1648-1655 |
JAP
(pdf) |
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