MOVPE and bulk crystals of Cu(Al,Ga)(S,Se)2 widegap chalcopyrite semiconductors

last update : February 10, 2012

(a) Papers
 Year   Authors   Title   Journal   Vol., Page   Link
2012
-1
B.Gil, D.Felbacq, and S.F.Chichibu
Exciton binding energies in chalcopyrite semiconductors
Physical Review B
85,
pp.075205 1-5
PRB
(pdf)







2007
-1
秩父重英
カルコパイライト半導体のエピタキシャル成長
応用物理学会 多元系機能材料研究会 20周年記念誌「20年の歩み」
依頼原稿
pp.66-69 (2007年9月21日)







2005
-1
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
Journal of Physics and Chemistry of Solids
66,
pp.1868-1871
JPCS
(pdf)







2004
-1
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma
Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector
Applied Physics Letters
85,
pp.4403-4405
APL
(pdf)







2003
-2
SF.Chichibu, Y.Harada, M.Sugiyama, and H.Nakanishi
Metalorganic vapor phase epitaxy of Cu(AlxGa1-x)(SySe1-y)2chalcopyrite semiconductors and their band offsets
Journal of Physics and Chemistry of Solids
64,
pp.1481-1489
JPCS
(pdf)

2003
-1
M.Sugiyama, R.Nakai, H.Nakanishi, and SF.Chichibu
Interface Fermi level pinning in a Cu/p-CuGaS2 Schottly diode
Journal of Physics and Chemistry of Solids
64,
pp.1787-1790
JPCS
(pdf)







2002
-3
M.Sugiyama, R.Nakai, H.Nakanishi, and SF.Chichibu
Fermi level pinning at the metal / p-type CuGaS2 interfaces
Journal of Applied Physics
92,
pp.7317-7315
JAP
(pdf)

2002
-2
Y.Harada, 
H.Nakanishi, and
S.F.Chichibu
Bandgap energy bowing and residual strain in CuAl(SxSe1-x)2 chalcopyrite 
semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy.
Journal of Applied Physics 91,
pp.5909-5914
JAP
(pdf)
2002
-1
S.F.Chichibu, S.Shirakata, and H.Nakanishi Metalorganic Vapor Phase Epitaxy of Cu(Al,Ga,In)(S,Se)2 Chalcopyrite Semiconductors Institute of Pure and Applied Physics Books 1,
pp91-97
IPAP
(pdf)






2001
-3
Yoshiyuki Harada, Hisayuki Nakanishi, and Shigefusa F. Chichibu Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy Jounal of Crystal Growth 336,
pp.473-480
JCG
(pdf)
2001
-2
Yoshiyuki Harada, Hisayuki Nakanishi,
Shigefusa F. Chichibu
Structural studies of Cu–III–VI2 chalcopyrite semiconductor heteroepitaxial
films grown by low-pressure metalorganic vapor phase epitaxy
Journal of Applied Physics 89,
pp5406-5413
JAP
(pdf)
2001
-1
Mutsumi Sugiyama, Hisayuki Nakanishi, Shigefusa F. Chichibu Experimental Determination of Valence Band Discontinuities at
Cu(Al,Ga)(S,Se)2/GaAs(001) Heterointerfaces Using Ultraviolet
Photoemission Spectroscopy
Japanese Journal of
Applied Physics
40
pp.L428 - L430
JJAP
(pdf)






2000
-3
Ravhi S.Kumar, A.Sekar, N.Victor Jaya, S.Natarajan and S.Chichibu Structural studies of CuAlSe2 and CuAlS2 chalcopyrites at high pressures Journal of Alloys and Compounds 312,
pp.4-8
JAC
(pdf)
2000
-2
S.Shirakata, S.Chichibu, H.Miyake, and K.Sugiyama Optical properties of CuGaSe2 and CuAlSe2 layers
epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates
 Journal of Applied Physics 87,
pp.7294-7302
JAP
(pdf)
2000
-1
S.Shirakata and S.Chichibu Photoluminescence of CuGaS2 epitaxial layers grown by metalorganic vapor phase epitaxy Journal of Applied Physics 87,
pp.3793-3799
JAP
(pdf)






1997
-4
S.Shirakata, S.Chichibu, and S.Isomura Room-Temperature Photoreflectance of CuAlxGa1-xSe2 Alloys Japanese Journal of
Applied Physics
36,
pp.7160-7161
JAP
(pdf)
1997
-3
S.Shirakata, S.Chichibu, and S.Isomura Crystal Growth and Optical Properties of CuAl(SxSe1-x)2 Alloys Japanese Journal of
Applied Physics
36,
pp.6645-6649
JJAP
(pdf)
1997
-2
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, H.Miyake, and K.Sugiyama Improved quality of CuGaSe2 and CuAlSe2 epilayers
grown on CuGa0.96In0.04Se2 substrates
Applied Physics Letters 71,
pp.533-535
APL
(pdf)
1997
-1
S.Chichibu, S.Shirakata, S.Isomura, and H.Nakanishi Visible and Ultraviolet Photoluminescence from Cu-III-VI2 Chalcopyrite
Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics 36,
pp.1703-1714
JJAP
(pdf)






1996
-10
S.Chichibu Excitonic emissions from CuAlS2 and CuAlSe2 OYO BUTSURI [in Japanese] 65,
pp.74-77

1996
-9
S.Chichibu, H.Nakanishi, S.Shirakata, S.Isomura, Y.Harada, S.Matsumoto, H.Higuchi, and T.Kariya Preparation and
characterization of CuAlxGa1-xSe2 alloy epilayers grown by low-pressure metalorganic vapor phase epitaxy
Journal of Applied Physics 80,
pp.3338-3345
JAP
(pdf)
1996
-8
M.Takahashi, A.Takahashi, R.Takei, N.Manba, H.Nakanishi, T.Irie, and S.Chichibu Growth of ZnInGaS4 Single Crystals by Vertical
Bridgman Method
Crystal Research and Technology 31,
pp.S73-76

1996
-7
S.Chichibu, M.Takahashi, N.Manba, A.Takahashi, R.Takei, H.Nakanishi, and T.Irie X-Ray Photoelectron Spectroscopy Analysis of
CdS/CdInGaS4 Heterointerface
Crystal Research and Technology  31,
pp.S309-312

1996
-6
T.Wakiyama, S.Matsumoto, and S.Chichibu Crystal Growth of AgGaS2 by the Vertical Bridgman Method Crystal Research and Technology  31,
pp.S53-56

1996
-5
S.Shirakata, S.Chichibu, and S.Isomura Photoluminescence of Heteroepitaxial CuGaS2 Layers Crystal Research and Technology  31,
pp.S717-720

1996
-4
S.Chichibu, S.Shirakata, K.Haga, and H.Nakanishi Low-Pressure Metalorganic Chemical Vapor
Depiition of CuAlS2 Epilayers
Crystal Research and Technology 31,
pp.S281-284

1996
-3
T.Azuhata, T.Terasako, K.Yoshida, T.Sota, K.Suzuki, and S.Chichibu Lattice dynamics of CuAlS2 and CuAlSe2 Physica B 219/220,
pp.496-498
PB
(pdf)
1996
-2
A.Yamada, Y.Makita, S.Niki, A.Obara, P.Fons, H.Shibata, M.Kawai, S.Chichibu, and H.Nakanishi Band-edge photoluminescence of
CuGaSe2 films grown by molecular beam epitaxy
Journal of Applied Physics 79,
pp.4318-4322
JAP
(pdf)
1996
-1
S.Shirakata and S.Chichibu Photoreflectance of Cu-based I-III-VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition Journal of Applied Physics 79,
pp.2043-2054
JAP
(pdf)






1995
-4
S.Chichibu, S.Shirakata, M.Uchida, Y.Harada, T.Wakiyama, S.Matsumoto, H.Higuchi, and S.Isomura Heteroepitaxial Growth of
CuGaS2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
Japanese Journal of Applied Physics 34,
pp.3991-3997
JJAP
(pdf)
1995
-3
S.Chichibu, H.Nakanishi, and S.Shirakata Ultraviolet photoluminescence from CuAlS2 heteroepitaxial layers grown by low-pressure
metalorganic chemical vapor deposition
Applied Physics Letters 66,
pp.3513-3515
APL
(pdf)
1995
-2
S.Chichibu, S.Shirakata, S.Isomura, Y.Harada, M.Uchida, S.Matsumoto, and H.Higuchi Photoluminescence studies in CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition Journal of Applied Physics 77,
pp.1225-1232
JAP
(pdf)
1995
-1
S.Chichibu and A.Kamata Raman spectra of CuAlSe2 heteroepitaxial layers Journal of Applied Physics 77,
pp.5470-5472
JAP
(pdf)






1994
-4
S.Chichibu, Y.Harada, M.Uchida, T.Wakiyama, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi Heteroepitaxy and
characterization of CuGaSe2 layers grown by low-pressure metalorganic chemical vapor deposition
Journal of Applied Physics 76,
pp.3009-3015
JAP
(pdf)
1994
-3
S.Chichibu, S.Shirakata, A.Ogawa, R.Sudo, M.Uchida, Y.Harada, T.Wakiyama, M.Shishikura, S.Matsumoto, and S.Isomura Growth of Cu(AlxGa1-x)SSe penternary alloy crystals by iodine chemical vapor transport method Journal of Crystal Growth 140,
pp.388-397
JCG
(abst)
1994
-2
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura Zn-related Donor-Acceptor Emission in CuAlSe2 Epitaxial Layers Japanese Journal of Applied Physics 33,
pp.L345-L347
JJAP
(pdf)
1994
-1
S.Chichibu, R.Sudo, N.Yoshida, Y.Harada, M.Uchida, S.Matsumoto, and H.Higuchi Low-Pressure Metalorganic Chemical Vapor
Deposition of a CuGaSe2/CuAlSe2 Heterostructure
Japanese Journal of Applied Physics 33,
pp.L286-L289
JJAP
(pdf)






1993
-10
S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura Photoreflectance Characterization of CuAlSe2 Heteroepitaxial Layer Grown
by Metalorganic Chemical Vapor Deposition
Japanese Journal of Applied Physics Supplment  32-3,
pp.494-496
JJAP
(pdf)
1993
-9
A.Ogawa, R.Sudo, A.Gupta, S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura Preparation and Characterization of
Cu(Al,Ga)(S,Se)2 Penternary Alloys
Japanese Journal of Applied Physics Supplment  32-3,
pp.588-589
JJAP
(pdf)
1993
-8
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi, and S.Isomura 2.51eV Donor-Acceptor Pair
Photoluminescence from Zn-doped CuAlSe2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Japanese Journal of Applied Physics Supplment  32-3,
pp.531-533
JJAP
(pdf)
1993
-7
S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi, and S.Isomura Low-Pressure Metalorganic
Chemical Vapor Deposition of CuAlSe2 Epitaxial Films
Japanese Journal of Applied Physics Supplment  32-3,
pp.139-141
JJAP
(pdf)
1993
-6
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi Excitonic photoluminescence in a CuAlSe2 chalcopyrite
semiconductor grown by low-pressure metalorganic chemical vapor deposition
Journal of Applied Physics 74,
pp.6446-6445
JAP
(pdf)
1993
-5
S.Chichibu, S.Matsumoto, S.Shirakata, S.Isomura, and H.Higuchi 2.51 eV photoluminescence from Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition Applied Physics Letters  62,
pp.3306-3308
APL
(pdf)
1993
-4
S.Chichibu, S.Shirakata, A.Iwai, S.Matsumoto, H.Higuchi and S.Isomura CuAlSe2 chalcopyrite epitaxial layers grown by
low-pressure metalorganic chemical vapor deposition
Journal of Crystal Growth 131,
pp.551-559
JCG
(abst)
1993
-3
S.Shirakata, S.Chichibu, R.Sudo, A.Ogawa, S.Matsumoto and S.Isomura Photoreflectance and Photoluminescence Studies of
CuAlxGa1-xSe2 Alloys
Japanese Journal of Applied Physics 32,
L1304-L1307
JJAP
(pdf)
1993
-2
S.Chichibu, A.Iwai, S.Matsumoto and H.Higuchi LP-MOCVD growth of CuAlSe2 epitaxial layers Journal of Crystal Growth 126,
pp.635-642
JCG
(abst)
1993
-1
S.Shirakata, S.Chichibu, S.Matsumoto and S.Isomura Photoreflectance Study of CuAlSe2 Heteroepitaxial Layers Japanese Journal of
Applied Physics 
32,
L167-L169
JJAP
(pdf)






1991
-1
S.Chichibu, M.Shishikura, J.Ino and S.Matsumoto Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transport Journal of Applied Physics 70,
pp.1648-1655
JAP
(pdf)






(b) Conferences
21. S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma: "Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods", The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), Denver, CO, USA Sep.27-Oct.1, (2004), Session I: Growth of Multinary Compounds No.11:20 (oral).

20. M.Sugiyama, R.Nakai, H.Nakanishi, and SF.Chichibu: "Interface Fermi level pinning in a Cu/p-CuGaS2 Schottly diode", The 13th International Conference on Ternary and Multinary Compounds (ICTMC-13), Paris, France Oct.14-16, (2002) O4-1 (poster)

19. SF.Chichibu, Y.Harada, M.Sugiyama, and H.Nakanishi: "Metalorganic vapor phase epitaxy of Cu(AlxGa1-x)(SySe1-y)2 chalcopyrite semiconductors and their band offsets", The 13th International Conference on Ternary and Multinary Compounds (ICTMC-13), Paris, France Oct.14-16, (2002) O4-1 (Invited-oral)

18. S.Chichibu, S.Shirakata, M.Sugiyama, and H.Nakanishi: "Ultraviolet Excitonic Photoluminescence from CuAlS2 Heteroepitaxial Films Grown by Metalorganic Vapor Phase Epitaxy", The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P40 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes
(Ohmsha Ltd., Tokyo, 1998) pp.596-599.

17. A.Bauknecht, U.Blieske, J.Bruns, T.Kampschulte, M.Saad, S.Chichibu, and M.Ch.Lux-Steiner: "Importance of the Interface Control for the Growth of High Quality CuGaSe2 Heteroepitaxial Layers using MOVPE", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. A10.3(oral); Institute of Physics Conference Series No.152 Section B P.269-272.

16. S.Shirakata, S.Chichibu, H.Miyake, S.Isomura, H.Nakanishi, and K.Sugiyama: "Photoluminescence of CuGaSe2 and CuAlSe2 MOVPE Layers Grown on CuGa0.96In0.04Se2 Substrate", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. (poster) Institute of Physics Conference Series No.152 Section B: Thin Film Growth and Characterization PP.445-448

15. S.Chichibu, S.Shirakata, and H.Nakanishi: "Metalorganic vapor phase epitaxy of Cu-III-VI2 widegap chalcopyrite semiconductors", The 11th International Conference on Ternary and Multinary Compounds (ICTMC-11), Salford, United Kingdom Sep.8-12,1997. (Invited-oral) Institute of Physics Conference Series No.152 Section B: Thin Film Growth and Characterization PP.257-260.

14. T.Kampschulte, J.Albert, A.Bauknecht, U.Blieske, S.Chichibu, M.Saad, and M.Ch.Lux-Steiner: "Heteroepitaxial Growth of CuGaSe2 on GaAs", 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Berlin, Germany, Jun.8-11, 1997.

13. S.Chichibu, S.Shirakata, S.Isomura, and H.Nakanishi: "Visible and Ultraviolet Photoluminescence from Cu-III-VI2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy", International Conference on Solid State Devices and Materials, Yokohama, Japan, Aug.26-29, 1996, PD-7(6), Extended Abstract pp.733-735.

12. M.Takahashi, A.Takahashi, R.Takei, N.Manba, H.Nakanishi, T.Irie, and S.Chichibu: "Growth of ZnInGaS4 Single Crystals by Vertical Bridgman Method", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POII.42.

11. S.Chichibu, M.Takahashi, N.Manba, A.Takahashi, R.Takei, H.Nakanishi, and T.Irie: "X-Ray Photoelectron Spectroscopy Analysis of CdS/CdInGaS4 Heterointerface", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POI.82.

10. T.Wakiyama, S.Matsumoto, and S.Chichibu: "Crystal Growth of AgGaS2 by the Vertical Bridgman Method", The 10th International  Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany, Sep.18-22,1995. POI.43.

9. S.Shirakata, S.Chichibu, and S.Isomura: "Photoluminescence of Heteroepitaxial CuGaS2 Layers", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany Sep.18-22,1995. POI.13.

8. S.Chichibu, S.Shirakata, K.Haga, and H.Nakanishi: "Low-Pressure Metalorganic Chemical Vapor Depiition of CuAlS2 Epilayers", The 10th International Conference on Ternary and Multinary Compounds (ICTMC-10), Stuttgart, Germany Sep.18-22,1995. 4A.1.

7. T.Azuhata, T.Terasako, K.Yoshida, T.Sota, K.Suzuki, and S.Chichibu: "Lattice dynamics of CuAlS2 and CuAlSe2", Phonons '95, Jul.24-28,1995. No.P41Th.

6. A.Ogawa, R.Sudo, A.Gupta, S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura: "Preparation and Characterization of Cu(Al,Ga)(S,Se)2 Penternary Alloys", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993.?12aP44.p.315.

5. S.Shirakata, S.Chichibu, S.Matsumoto, and S.Isomura: "Photoreflectance Characterization of CuAlSe2 Heteroepitaxial Layer Grown by Metalorganic Chemical Vapor Deposition", The 9th International Conference on Ternary and Multinary Compounds(ICTMC-9) Yokohama, Japan Aug.8-12 1993.12pA2.p.348.

4. S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi and S.Isomura: "2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe2 Epilayer Grown by LP-MOCVD", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993. 10pP18. p.129.

3. S.Chichibu, S.Shirakata, R.Sudo, M.Uchida, Y.Harada, S.Matsumoto, H.Higuchi and S.Isomura: "LP-MOCVD of CuAlSe2 Epitaxial Films", The 9th International Conference on Ternary and Multinary Compounds (ICTMC-9) Yokohama, Japan Aug.8-12 1993. 10aA3. p.91.

2. S.Shirakata, S.Isomura, and S.Chichibu: "Photoreflectance Characterization of Lattice Strain in Wide-Gap Cu-III-VI2 Epitaxial Layers", International Symposium-R of The Materials Research Society of Japan, Makuhari, Japan, May 22-23,1996. RP37. Proceedings of MRS-J Symposium R; Novel Semiconductor Materials, edited by H.Oyanagi, (1996), pp.113-116. Transactions of the Materials Research Society of Japan, 20,pp.782-785(1996).

1. S.Chichibu, K.Yamaya, H.Nakanishi, S.Shirakata, and S.Isomura: "Metalorganic Vapor Phase Epitaxy of CuAlxGa1-xSe2 Alloys", International Symposium-R of The Materials Research Society of Japan, Makuhari, Japan, May 22-23,1996. RP10, Proceedings of MRS-J Symposium R; Novel Semiconductor Materials, edited by H.Oyanagi, (1996), pp.62-65; Transactions of the Materials Research Society
of Japan, 20,pp.727-730(1996).


  (c) Others

S.Chichibu : Powder Diffraction File Set.44 (for CuAlSe2) International Centre for Diffraction Data.