Electrical characterization of liquid-encapsulated Czochralski GaAs bulk single crystals

III-V compound semiconductors
(MOVPE growth, characterization, processing of GaAs and InP)

last update : May 8, 2005

(a) Papers

Year	Authors	Title	Journal	Vol., Page	Link
1993 -3	S.Chichibu, A.Iwai, Y.Nakahara, S.Matsumoto, H.Higuchi, L.Wei and S.Tanigawa	Monoenergetic positron beam study of Si-doped GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine	Journal of Applied Physics	73, pp.3880-3885	JAP (pdf)
1993 -2	N.Yoshida, S.Chichibu, T.Akane, M.Totsuka, H.Uji, S.Matsumoto and H.Higuchi	Surface passivation of GaAs using ArF excimer laser in a H₂S gas ambient	Applied Physics Letters	63, pp.3035-3037	APL (pdf)
1993 -1	J.Ogata, A.Iwai, S.Chichibu, and S.Matsumoto	EL2 Out-Diffusion in Thermally Annealed Liquid-Encapsulated Czochralski GaAs	Japanese Journal of Applied Physics	32, pp.5059-5061	JJAP (pdf)
1992	S.Chichibu, A.Iwai, S.Matsumoto and H.Higuchi	Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane	Applied Physics Letters	60, pp.489-491	APL (pdf)
1990	S.Chichibu, M.Kushibe, K.Eguchi, M.Funemizu and Y.Ohba	High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition	Journal of Applied Physics	68, pp.859-861	JAP (pdf)
1989	S.Chichibu, N.Ohkubo and S.Matsumoto	Role of Electron Traps on the Thermal Conversion and Its Suppression for Liquid-Encapsulated Czochralski GaAs Single Crystals	Japanese Journal of Applied Physics	28, pp.1750-1755	JJAP (pdf)
1988 -2	N.Ohkubo, S.Chichibu and S.Matsumoto	Effect of carbon concentration on the thermal conversion of liquid-encapsulated Czochralski semi-insulating GaAs	Applied Physics Letters	53, pp.1054-1055	APL (pdf)
1988 -1	S.Chichibu, N.Ohkubo and S.Matsumoto	Effects of controlled As pessure annealing on deep levels of liquid encapsulated Czochralski GaAs single cryatals	Journal of Applied Physics	64, pp.3987-3993	JAP (pdf)
1987	S.Chichibu, S.Matsumoto and T.Obokata	Effect of carbon concentration on the electrical properties of liquid-encapsulated Czochralski semi-insulating GaAs	Journal of Applied Physics	62, pp.4316-4318	JAP (pdf)

(b) International Conferences

4. M.Totsuka, N.Yoshida, S.Chichibu, T.Akane, H.Uji, H.Higuchi, and S.Matsumoto: "Dry Sulfur Passivation of GaAs Surface Using ArF Excimer Laser with H2S", Extended Abstracts of 1993 International Conference on Solid State Devices and Materials, Tsukuba, Japan, 1993,p.739.

3. S.Chichibu, A.Iwai, S.Matsumoto, H.Higuchi, L.Wei and S.Tanigawa: "Monoenergetic Positron Beam Study of Heavily Si-Doped GaAs Grown by MOCVD Using Tertiarybutylarsine", 5th International Conference on Shallow Impurities in Semiconductors, Physics and Control of Impurities. Kobe, Japan August 5-8 1992: Materials Science Forum 117-118,pp.315-320(1993).

2. S.Chichibu, N.Ohkubo and S.Matsumoto: "EL2 Deep Level Distribution Under Controlled
As Pressure Annealing of LEC GaAs", 5th Conference on Semi-Insulating III-V Materials. Malmo, Sweden, June 1-3 1988. (Adam Hilger,Bristol and Philadelphia, 1988), Chap.1, p.25.

1. S.Chichibu and S.Matsumoto: "The Effect of As Pressure Controlled Annealing on Deep
Levels of LEC GaAs Crystals", 172nd Meeting of The Electrochemical Society,Inc.
Honoruru,Hawaii Oct 18-23 1987: Journal of Electrochemical Society 134,p.576C(1987).