II-VI compound semiconductors
 (ZnO and ZnSe)

last update : September 24, 2013

(a) Papers
 
Year
Authors
Title
Journal
Vol., page
Link
2012
-3
S. -H. Jang and S. F. Chichibu Structural, elastic, and polarization paremeters and band structures of wurtzite ZnO and MgO Journal of Applied Physics 112,
073503 1-6
JAP
(pdf)
2012
-2
A.Takagi, A.Nakamura, A.Yoshikaie, S.Yoshioka, S.Adachi, S.F.Chichibu, and T.Sota Signatures of Γ15 mixed-mode polaritons in polarized reflectance spectra of ZnO Journal of Physics: Condensed Matter 24,
415801 1-8
JPCM
(pdf)
2012
-1
K.Hazu, S.F.Chichibu, S.Adachi, and T.Sota Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique Journal of Applied Physics 111,
093522 1-6
JAP
(pdf)
Year
Authors
Title
Journal
Vol., page
Link
2010
-3
H.Yuji, K.Nakahara, K.Tamura, S.Akasaka, Y.Nishimoto, D.Takamizu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0 ≤ x ≤ 0.12) Films on Zn-Polar ZnO Substrates Japanese Journal of Applied Physics 49,
071104 1-5
JJAP
(pdf)
2010
-2
Y.Sawai, K.Hazu, and S.F.Chichibu Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method Journal of Applied Physics 108,
063541 1-8
JAP
(pdf)
2010
-1
K.Nakahara, S.Akasaka, H.Yuji, K.Tamura, T.Fujii, Y.Nishimoto, D.Takamizu, A.Sasaki, T.Tanabe, H.Takasu, H.Amaike, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki p-MgZnO/n-ZnO Ultraviolet Light-emitting Diodes on ZnO Substrates Applied Physics Letters 97 (1),
013501 1-3
APL
(pdf)
Year
Authors
Title
Journal
Vol., page
Link
2009
-4
T.Yamada,T.Miyanaga, T.Azuhata, T.Koyama, S.F.Chichibu, and Y.Kitajima Local structure study of Mg0.06Zn0.94O film by polarized XAFS e-Journal of Surface Science and Nanotechnology 7,
pp.596-600
ejssnt
(pdf)
2009
-3
H.Amaike, K.Hazu, Y.Sawai, and S.F. Chichibu Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films Applied Physics Expres 2 (10),
pp.105503 1-3
APEX
(pdf)
2009
-2
S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu
Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering
Physica Status Solidi (c)
6,
1109-1111
pss(c)
(pdf)
2009
-1
S.Takahata, K.Saiki, T.Imao, H.Nakanishi, M.Sugiyama, and S.F.Chichibu
Fabrication of a n-type ZnO / p-type Cu-Al-O heterojunction diode by sputtering deposition methods
Physica Status Solidi (c)
6,
1105-1108
pss(c)
(pdf)
Year
Authors
Title
Journal
Vol., Page
Link
2008
-3
Y.Nishimoto, K.Nakahara, D.Takamizu, A.Sasaki, K.Tamura, S.Akasaka, H.Yuji, T.Fujii, T.Tanabe, H.Takasu, A.Tsukazaki, A.Ohtomo, T.Onuma, S.F.Chichibu, and M.Kawasaki
Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates
Applied Physics Express
1 (9),
pp.091202 1-3
APEX
(pdf)

2008
-2
S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu
Preparation of Ga doped ZnO thin films by helicon-wave-excited plasma sputtering
Physica Status Solidi (c) 5 (9),
pp.3135-3137
pss(c)
(pdf)
2008
-1
D.Takamizu, Y.Nishimoto, S.Akasaka, H.Yuji, K.Tamura, K.Nakahara, T.Onuma, T.Tanabe, H.Takasu, M.Kawasaki, and S.F.Chichibu
Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy
Journal of Applied Physics 103,
pp.063502 1-4
JAP
(pdf)

Year
Authors
Title
Journal
Vol., Page
Link
2007
-2
T.Koyama, A.N.Fouda, N.Shibata, and S.F.Chichibu Effects of the high-temperature-annealed self-buffer layer on the improved
properties of ZnO epilayers grown by helicon-wave-excited-plasma
sputtering epitaxy on a-plane sapphire substrates
Journal of Applied Physics 102,
pp.073505 1-4
JAP
(pdf)

2007
-1
M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, and S.F.Chichibu
Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

Applied Physics Letters

90
,
pp.141903 1-3

APL
(pdf)
 Year
 Authors   Title   Journal   Vol., Page  Link
2006
-2
M.Sugiyama, A.Murayama, T.Imao, K.Saiki, H.Nakanishi, and S.F.Chichibu:
Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films
Physica Status Solidi (a)
203 (11),
pp.2882-2886
pss(a)
(pdf)
2006
-1
S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukazaki, A.Ohtomo, and M.Kawasaki:
Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
Journal of Applied Physics
99,
pp.093505 1-6
JAP
(pdf)
Year Authors Title Journal Vol., Page Link
2005
-6
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma:
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
Journal of Physics and Chemistry of Solids 66,
pp.1868-1871
JPCS
(pdf)
2005
-5
A.Tsukazaki, M.Kubota, A.Ohtomo, T.Onuma, K.Ohtani, H.Ohno, S.F.Chichibu, and M.Kawasaki:
Blue Light-Emitting Diode Based on ZnO
Japanese Journal of Applied Physics 44,
pp.L643-L645
JJAP
(pdf)
2005
-4
K.Hazu, S.Adachi, T.Sota, and S.F.Chichibu:
Measurements of exciton-polariton dynamics in ZnO by using nonlinear spectroscopic techniques
Journal of Luminescence 112,
pp.7-10
JL
(pdf)
2005
-3
S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, and M.Kawasaki:
Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO
Semiconductor Science and Technology 20,
pp.S67-S77
SST
(pdf)
2005
-2
S.Adachi, K.Hazu, T.Sota, S.Chichibu, G.Cantwell, D.C.Reynolds, and C.W.Litton:
Biexcitons and their dephasing processes in ZnO
Physica Status Solidi (c) 2(2),
pp.890-895
pss(c)
(pdf)
2005
-1
A.Tsukazaki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Nature Materials 4,
pp.42-46
nature materials
(pdf)
Year Authors Title Journal Vol., Page Link
2004
-11
T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, and H.Koinuma
Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer
Applied Physics Letters 85,
pp.5586-5588
APL
(pdf)
2004
-10
T.Koida, A.Uedono, A.Tsukazaki, T.Sota, M.Kawasaki, and S.F.Chichibu
Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques
Physica Status Solidi (a) 201,
pp.2841-2845
pss(a)
(pdf)
2004
-9
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, and T.Onuma
Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector
Applied Physics Letters 85,
pp.4403-4405
APL
(pdf)
2004
-8
T.Koyama, T.Ohmori, N.Shibata, T.Onuma, and S.F.Chichibu
In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg0.06Zn0.94O films
Journal of Vacuum Science & Technology B 22,
pp.2220-2225
JVSTB
(pdf)
2004
-7
K.Hazu, T.Sota, S.Adachi, SF.Chichibu, G.Cantwell, D.C.Reynolds and C.W.Litton
Phonon scattering of excitons and biexcitons in ZnO
Journal of Applied Physics 96,
pp.1270-1272
JAP
(pdf)
2004
-6
T.Koyama and SF.Chichibu
Importance of lattice-matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO
Journal of Applied Physics 95,
pp.7856-7861
JAP
(pdf)
2004
-5
K.Hazu, K.Torii, T.Sota, S.Adachi, SF.Chichibu, G.Cantwell, D.C.Reynolds and C.W.Litton
Impact of the k-linear term on nonlinear optical response of the C-exciton manifold in ZnO
Journal of Applied Physics 95,
pp.5498-5501
JAP
(pdf)
2004
-4
S.F.Chichibu and T.Sota
Excitonic optical spectra of ZnO, a group-II oxide semiconductor
OYO BUTSURI
[in Japanese]
73,
pp.624-628

2004
-3
S.Adachi, K.Hazu, T.Sota, S.F.Chichibu, G.Cantwell, D.B.Eason, D.C.Reynolds, and C.W.Litton
Biexciton formation and exciton-exciton correlation effects in bulk ZnO
Semiconductor Science Technology 19,
pp.S276-S278
SST
(abst)
2004
-2
T.Koida, S.F.Chichibu, A.Uedono, T.Sota, A.Tsukazaki, and M.Kawasaki Radiative and nonradiative excitonic transitions in nonpolar (11-20) and polar(000-1) and (0001) ZnO epilayers Applied Physics Letters 84,
pp.1079-1081
APL
(pdf)
2004
-1
Y.-Z.Yoo, T.Sekiguchi,
T.Chikyow, M.Kawasaki,
T.Onuma, S.F.Chichibu,
H.K.Song, and H.Koinuma
V-defect of ZnO thin films grown on Si as an ultraviolet optical path Applied Physics Letters 84,
pp.502-504
APL
(pdf)
 Year    Authors  Title  Journal  Vol., Page  Link
2003
-8
Y.-Z.Yoo, T.Chikyow,
M.Kawasaki, T.Onuma,
SF.Chichibu, and H.Koinuma
Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111) Japanese Journal of Applied Physics 42,
pp.7029-7032
JJAP
(pdf)
2003
-7
T.Koyama, T.Onuma,
and SF.Chichibu
In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO Applied Physics Letters 83,
pp.2973-2975
APL
(pdf)
2003
-6
A.Tsukazaki, A.Ohtomo,
S.Yoshida, M.Kawasaki,
C.H.Chia, T.Makino,
Y.Segawa, T.Koida,
S.F.Chichibu,
and H.Koinuma
Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer Applied Physics Letters 83,
pp.2784-2786
APL
(pdf)
2003
-5
K.Hazu, T.Sota, K.Suzuki, S.Adachi, SF.Chichibu, G.Cantwell, D.B.Eason, D.C.Reynolds,
and C.W.Litton
Strong biexcitonic effects and exciton-exciton correlations in ZnO Physical Review B 62,
033205
PRB
(pdf)
2003
-4
T.Azuhata, M.Takesada, T.Yagi, A.Shikanai, SF.Chichibu, K.Torii, A.Nakamura, T.Sota, G.Cantwell, D.B.Eason,
and C.W.Litton
Brillouin scattering study of ZnO Journal of Applied Physics 94,
pp.968-972
JAP 
(pdf)
2003 
-3
A.Uedono, T.Koida, A.Tsukazaki, M.Kawasakia, Z.Q.Chen, SF.Chichibu,
and H.Koinuma
Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam Journal of Applied Physics 93,
pp.2481-2485
JAP
(pdf)
2003 
-2
T.Koida, S.F.Chichibu, A.Uedono, A.Tsukazaki, M.Kawasaki, T.Sota, Y.Segawa, and H.Koinuma Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO Applied Physics Letter 82,
pp.532-534
APL
(pdf)
2003 
-1
SF.Chichibu, T.Sota, G.Cantwell, D.B.Eason,
and C.W.Litton
Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal Journal of Applied Physics 93,
pp.756-758
JAP
(pdf)
 Year    Authors   Title  Journal  Vol., Page  Link
2002 
-4
S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy Japanese Journal of Applied Physics 41,
pp.L935-L937 
JJAP
(pdf)
2002 
-3
S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on 
the a-face sapphire by radical-source molecular-beam-epitaxy

Physica Status Solidi (a)
192,
pp.171-176
 pss(a)
(pdf)
2002 
-2
S.F.Chichibu, A.Tsukazaki, M.Kawasaki, K.Tamura, Y.Segawa, T.Sota,
and H.Koinuma
Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 substrate grown by laser molecular-beam-epitaxy Applied Physics Letters 80,
pp.2860-2862
APL
(pdf)
2002 
-1
S.F.Chichibu, T.Yoshida, T.Onuma, and H.Nakanishi  Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates Journal of Applied Physics 91,
pp.874-877
JAP
(pdf)
 Year    Authors   Title  Journal  Vol., Page  Link
2001 Y.-Z.Yoo, Y.Osaka, T.Fukumura, Z.Jin, M.Kawasaki, H.Koinuma, 
T.Chikyow, P.Ahmet, A.Setoguchi,
and S.F.Chichibu
High temperature growth of ZnS films on bare Si and transformation of ZnS to
ZnO by thermal oxidation
Applied Physics Letters 78,
pp.616-618
APL
(pdf)
 Year    Authors   Title  Journal  Vol., Page  Link
1998 K.Yamaya, Y.Yamaki, H.Nakanishi, and S.Chichibu Use of a helicon-wave excited plasma for
aluminum-doped ZnO thin-film sputtering
Applied Physics Letters 72,
pp.235-237
APL
(pdf)
 Year
  Authors   Title  Journal  Vol., Page  Link
1997 A.Kamata, H.Yoshida, S.Chichibu, and H.Nakanishi Growth and Doping Characteristics
of ZnSeTe Epilayers by MOCVD
Journal of Crystal Growth 170,
pp.518-522
JCG
(pdf)
(b) International Conferences
30. S. F. Chichibu and A. Uedono:
"Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.17 (2013), Symposium H: Smart Materials Design for Ultimate Functional Materials: Functional Core Concept, No.17p-M4-5 (Invited-oral).

29. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:
"Local structure study of Mg0.06Zn0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).

28. K. Hazu, T. Sota, S. Adachi, and S. F. Chichibu:
"Valence band ordering in ZnO identified using the four-wave-mixing technique",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.P14 (poster).

27. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:
"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).

26. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:
"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).

25. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizsu, A. Sasaki, T. Tanabe, A. Kamisawa
H. Amaike, T. Onuma, S. F. Chichibu, M. Nakano, T. Fukumura, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"Molecular beam epitaxy of ZnO based heterostructures for advanced optoelectronic devices",
The 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, Sep. 21-24 (2008)  (Invited-oral).

24. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),
No.AP24 (poster).

23. K. Hazu, T. Sota, S. Adach, and S. F. Chichibu:
 "Dephasing dynamics of excitons and biexcitons in ZnO",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),
No.DP6 (poster).

22. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).

21. D.Takamizu, Y.Nishimoto, S.Akasaka, H.Yuji, K.Tamura, K. Nakahara, T.Tanabe, H.Takasu, M.Kawasaki, T.Onuma, and S.F.Chichibu:
"Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.M1 (Invited-oral).

20. K.Nakahara, H.Yuji, K.Tamura, S.Akasaka, A.Sasaki, Y.Nishimoto, D.Takamizu, T.Fujii, T.Tanabe, H.Takasu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki:
"Homoepitaxial MgZnO grown by molecular beam epitaxy toward ultraviolet light-emitting diodes"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008,
Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-17 (Invited-oral).

19. H.Yuji, K.Nakahara, K.Tamura, S.Akasaka, A.Sasaki, T.Tanabe, H.Takasu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki:
"MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008,
Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-10 (oral).

18. S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:
"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).

17. M.Kubota, A.Tsukazaki, T.Onuma, A.Ohtomo, T.Sota, M.Kawasaki, and S.F.Chichibu:
"Effects of High-Temperature-Annealed self-Buffer layer (HITAB) insertion on the photoluminescence properties of Mg0.15Zn0.85O alloy films grown by laser-assisted molecular-beam epitaxy"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Poster I, No.P137 (poster).

16. S.F.Chichibu, N.Shibata, A.N.Fouda, T.Iijima, and T.Koyama:
"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).

15. S.F.Chichibu, N.Shibata, and T.Koyama:
"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).

14. A.Murayama, T.Imao, K.Saiki, H.Nakanishi, M.Sugiyama and S.F.Chichibu:
"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).

13. A.Tsukazaki, A.Ohtomo, M.Kawasaki, M.Kubota, T.Onuma, S.F.Chichibu, M.Sumiya, S.Fuke, T.Kita, K.Ohtani, Y.Ohno, H.Ohno, T.Makino, Y.Segawa and H.Koinuma:
"Advances in ZnO thin film growth by laser molecular-beam epitaxy"
MRS 2005 Fall Meeting, Nov 28- Dec 2 (2005), Boston, USA, Proc p. 727 (Invited-Oral).

12. S.F.Chichibu et al.:
"Defect studies of ZnO by time-resolved photoluminescence and positron annihilation spectroscopy"
The 2nd International Symposium on Point Defect and Nonstoichiometry (ISPN-2), Kaohsiung, Taiwan, Oct. 4-6, (2005) No. Th-B3-1 (Invited-oral).

11. N.Shibata, T.Ohmori, T.Koyama, T.Onuma, and S.F.Chichibu:
"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).

10. S.F.Chichibu, A.Tsukazaki, T.Onuma, A.Ohtomo, T.Sota, A.Uedono, and M.Kawasaki:
"Record long room-temperature spontaneous emission lifetime in ZnO epilayers grown by laser-assisted molecular beam epitaxy on ScAlMgO4 substrates using high-temperature-annealed self-buffer and proper defect management",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. O6 (oral).

9. A.Tsukazki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki:
"A homoepitaxial ZnO p-i-n light emitting diode"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 9, No.11:00 (oral).

8. T.Koyama, T.Ohmori, N.Shibata, T.Onuma, and S.F.Chichibu:
"Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).

7. S.F.Chichibu, T.Onuma, A.Tsukazaki, M.Kubota, A.Ohtomo, A.Uedono, Y.Segawa, T.Sota, and M.Kawasaki:
"Record long room-temperature photoluminescence lifetime in ZnO epilayers grown by laser-assisted MBE using appropriate defect management"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-29 (poster).

6. T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, and H.Koinuma:
"Reduction in the nonradiative defect density in ZnO films grown on Si substrates by the use of ZnS epitaxial buffer layers"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 2, No.11:40 (oral)

5. A.Tsukazki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki:
"Electroluminescent ZnO p-i-n homostructural-junction"
11th International Workshop on Oxide Electronics (WOE11), Hakone, Japan, Oct, 3-5 (2004).

4. T.Koyama and S.F.Chichibu:
"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral&poster).

3. S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki:
"Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam-epitaxy",
Fourth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2002), Cordoba, Spain, Mar.10-15, (2002), No.TuC6 (oral).

2. Y.Yamaki, K.Yamaya, H.Araya, H.Nakanishi, and S.Chichibu:
"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.

1. A.Kamata, H.Yoshida, S.Chichibu, and H.Nakanishi:
"Growth and Doping Characteristics of ZnSeTe Epilayers by MOCVD",
8th International Conference on Metal Organic Vapour Phase Epitaxy(ICMOVPE-8), Wales, England, Jun.9-13,1996. No. OOSP.7