last update : September 24, 2013
(a) PapersYear |
Authors |
Title |
Journal |
Vol.,
page |
Link |
2012 -3 |
S. -H. Jang and S. F. Chichibu | Structural, elastic, and polarization paremeters and band structures of wurtzite ZnO and MgO | Journal of Applied Physics | 112, 073503 1-6 |
JAP (pdf) |
2012 -2 |
A.Takagi, A.Nakamura, A.Yoshikaie, S.Yoshioka, S.Adachi, S.F.Chichibu, and T.Sota | Signatures of Γ1-Γ5 mixed-mode polaritons in polarized reflectance spectra of ZnO | Journal of Physics: Condensed Matter | 24, 415801 1-8 |
JPCM (pdf) |
2012 -1 |
K.Hazu, S.F.Chichibu, S.Adachi, and T.Sota | Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique | Journal of Applied Physics | 111, 093522 1-6 |
JAP (pdf) |
Year |
Authors |
Title |
Journal |
Vol.,
page |
Link |
2010 -3 |
H.Yuji, K.Nakahara, K.Tamura, S.Akasaka, Y.Nishimoto, D.Takamizu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki | Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0 ≤ x ≤ 0.12) Films on Zn-Polar ZnO Substrates | Japanese Journal of Applied Physics | 49, 071104 1-5 |
JJAP (pdf) |
2010 -2 |
Y.Sawai, K.Hazu, and S.F.Chichibu | Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method | Journal of Applied Physics | 108, 063541 1-8 |
JAP (pdf) |
2010 -1 |
K.Nakahara, S.Akasaka, H.Yuji, K.Tamura, T.Fujii, Y.Nishimoto, D.Takamizu, A.Sasaki, T.Tanabe, H.Takasu, H.Amaike, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki | p-MgZnO/n-ZnO Ultraviolet Light-emitting Diodes on ZnO Substrates | Applied Physics Letters | 97 (1), 013501 1-3 |
APL (pdf) |
Year |
Authors |
Title |
Journal |
Vol.,
page |
Link |
2009 -4 |
T.Yamada,T.Miyanaga, T.Azuhata, T.Koyama, S.F.Chichibu, and Y.Kitajima | Local structure study of Mg0.06Zn0.94O film by polarized XAFS | e-Journal of Surface Science and Nanotechnology | 7, pp.596-600 |
ejssnt (pdf) |
2009 -3 |
H.Amaike, K.Hazu, Y.Sawai, and S.F. Chichibu | Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films | Applied Physics Expres | 2 (10), pp.105503 1-3 |
APEX (pdf) |
2009 -2 |
S.Masaki, H.Nakanishi,
M.Sugiyama, and S.F.Chichibu |
Ga-doped ZnO transparent conducting films
prepared by helicon-wave-excited plasma sputtering |
Physica Status Solidi (c) |
6, 1109-1111 |
pss(c) (pdf) |
2009 -1 |
S.Takahata, K.Saiki, T.Imao,
H.Nakanishi, M.Sugiyama, and S.F.Chichibu |
Fabrication of a n-type ZnO / p-type Cu-Al-O heterojunction diode
by sputtering deposition methods |
Physica Status Solidi (c) |
6, 1105-1108 |
pss(c) (pdf) |
Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
2008 -3 |
Y.Nishimoto, K.Nakahara,
D.Takamizu, A.Sasaki, K.Tamura, S.Akasaka, H.Yuji, T.Fujii, T.Tanabe,
H.Takasu, A.Tsukazaki, A.Ohtomo, T.Onuma, S.F.Chichibu, and M.Kawasaki |
Plasma-assisted molecular beam epitaxy of
high optical quality MgZnO films on Zn-polar ZnO substrates |
Applied Physics Express |
1 (9), pp.091202 1-3 |
APEX (pdf) |
2008 -2 |
S.Masaki, H.Nakanishi,
M.Sugiyama, and S.F.Chichibu |
Preparation of Ga doped ZnO thin films by
helicon-wave-excited plasma sputtering |
Physica Status Solidi (c) | 5 (9), pp.3135-3137 |
pss(c) (pdf) |
2008 -1 |
D.Takamizu, Y.Nishimoto,
S.Akasaka, H.Yuji, K.Tamura, K.Nakahara, T.Onuma, T.Tanabe, H.Takasu,
M.Kawasaki, and S.F.Chichibu |
Direct correlation between the internal
quantum efficiency and photoluminescence lifetime in undoped ZnO
epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular
beam epitaxy |
Journal of Applied Physics | 103, pp.063502 1-4 |
JAP (pdf) |
Year |
Authors
|
Title
|
Journal
|
Vol., Page
|
Link
|
2007 -2 |
T.Koyama, A.N.Fouda, N.Shibata, and S.F.Chichibu | Effects of the high-temperature-annealed
self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates |
Journal of Applied Physics | 102, pp.073505 1-4 |
JAP
(pdf) |
2007 -1 |
M.Kubota, T.Onuma, A.Tsukazaki,
A.Ohtomo, M.Kawasaki, T.Sota, and S.F.Chichibu |
Recombination
dynamics of excitons in Mg0.11Zn0.89O
alloy films grown using the high-temperature-annealed self-buffer layer
by laser-assisted molecular-beam epitaxy |
Applied Physics Letters |
90, pp.141903 1-3 |
APL (pdf) |
Year |
Authors | Title | Journal | Vol., Page | Link |
2006 -2 |
M.Sugiyama, A.Murayama,
T.Imao, K.Saiki, H.Nakanishi, and S.F.Chichibu: |
Helicon-wave-excited Plasma Sputtering
Deposition of Ga-doped ZnO Transparent Conducting Films |
Physica Status Solidi (a) |
203 (11), pp.2882-2886 |
pss(a) (pdf) |
2006 -1 |
S.F.Chichibu, T.Onuma,
M.Kubota, A.Uedono, T.Sota, A.Tsukazaki, A.Ohtomo, and M.Kawasaki: |
Improvements in quantum efficiency of
excitonic emissions in ZnO epilayers by the elimination of point defects |
Journal of Applied Physics |
99, pp.093505 1-6 |
JAP (pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
2005 -6 |
S.F.Chichibu, T.Ohmori,
N.Shibata, T.Koyama, and T.Onuma: |
Fabrication of p-CuGaS2/n-ZnO:Al
heterojunction light-emitting diode grown by metalorganic vapor phase
epitaxy and helicon-wave-excited-plasma sputtering methods |
Journal of Physics and Chemistry of Solids | 66, pp.1868-1871 |
JPCS (pdf) |
2005 -5 |
A.Tsukazaki, M.Kubota,
A.Ohtomo, T.Onuma, K.Ohtani, H.Ohno, S.F.Chichibu, and M.Kawasaki: |
Blue Light-Emitting Diode Based on ZnO |
Japanese Journal of Applied Physics | 44, pp.L643-L645 |
JJAP (pdf) |
2005 -4 |
K.Hazu, S.Adachi, T.Sota, and
S.F.Chichibu: |
Measurements of exciton-polariton dynamics
in ZnO by using nonlinear spectroscopic techniques |
Journal of Luminescence | 112, pp.7-10 |
JL (pdf) |
2005 -3 |
S.F.Chichibu, A.Uedono,
A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell,
C.W.Litton, T.Sota, and M.Kawasaki: |
Exciton-polariton spectra and limiting
factors for the room-temperature photoluminescence efficiency in ZnO |
Semiconductor Science and Technology | 20, pp.S67-S77 |
SST (pdf) |
2005 -2 |
S.Adachi, K.Hazu, T.Sota,
S.Chichibu, G.Cantwell, D.C.Reynolds, and C.W.Litton: |
Biexcitons and their dephasing processes in
ZnO |
Physica Status Solidi (c) | 2(2), pp.890-895 |
pss(c)
(pdf) |
2005 -1 |
A.Tsukazaki, A.Ohtomo,
T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke,
Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki |
Repeated temperature modulation epitaxy for
p-type doping and
light-emitting diode based on ZnO |
Nature Materials | 4, pp.42-46 |
nature
materials (pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
2004 -11 |
T.Onuma, S.F.Chichibu,
A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, and H.Koinuma |
Reduced
defect densities in the ZnO epilayer grown on Si substrates by
laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer |
Applied Physics Letters | 85, pp.5586-5588 |
APL
(pdf) |
2004 -10 |
T.Koida, A.Uedono,
A.Tsukazaki, T.Sota, M.Kawasaki, and S.F.Chichibu |
Direct
comparison of photoluminescence lifetime and defect densities in ZnO
epilayers studied by time-resolved photoluminescence and slow positron
annihilation techniques |
Physica Status Solidi (a) | 201, pp.2841-2845 |
pss(a)
(pdf) |
2004 -9 |
S.F.Chichibu, T.Ohmori,
N.Shibata, T.Koyama, and T.Onuma |
Greenish-white electroluminescence from p-type CuGaS2
heterojunction diodes using n-type
ZnO as an electron
injector |
Applied Physics Letters | 85, pp.4403-4405 |
APL
(pdf) |
2004 -8 |
T.Koyama, T.Ohmori,
N.Shibata, T.Onuma, and S.F.Chichibu |
In situ monitoring of Zn* and Mg*
species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
and Mg0.06Zn0.94O films |
Journal of Vacuum Science & Technology B | 22, pp.2220-2225 |
JVSTB
(pdf) |
2004 -7 |
K.Hazu,
T.Sota, S.Adachi, SF.Chichibu, G.Cantwell, D.C.Reynolds and C.W.Litton |
Phonon scattering of excitons and
biexcitons in ZnO |
Journal of Applied Physics | 96, pp.1270-1272 |
JAP
(pdf) |
2004 -6 |
T.Koyama
and SF.Chichibu |
Importance of lattice-matching and surface
arrangement for the helicon-wave-excited-plasma sputtering epitaxy of
ZnO |
Journal of Applied Physics | 95, pp.7856-7861 |
JAP
(pdf) |
2004 -5 |
K.Hazu,
K.Torii, T.Sota, S.Adachi, SF.Chichibu, G.Cantwell,
D.C.Reynolds and C.W.Litton |
Impact of the k-linear term on nonlinear
optical response of the C-exciton manifold in ZnO |
Journal of Applied Physics | 95, pp.5498-5501 |
JAP
(pdf) |
2004
-4 |
S.F.Chichibu
and T.Sota |
Excitonic optical spectra of ZnO, a
group-II oxide semiconductor |
OYO
BUTSURI [in Japanese] |
73, pp.624-628 |
|
2004
-3 |
S.Adachi,
K.Hazu, T.Sota, S.F.Chichibu, G.Cantwell, D.B.Eason, D.C.Reynolds, and
C.W.Litton |
Biexciton formation and exciton-exciton
correlation effects in bulk ZnO |
Semiconductor Science Technology | 19, pp.S276-S278 |
SST (abst) |
2004 -2 |
T.Koida, S.F.Chichibu, A.Uedono, T.Sota, A.Tsukazaki, and M.Kawasaki | Radiative and nonradiative excitonic transitions in nonpolar (11-20) and polar(000-1) and (0001) ZnO epilayers | Applied Physics Letters | 84, pp.1079-1081 |
APL
(pdf) |
2004 -1 |
Y.-Z.Yoo, T.Sekiguchi, T.Chikyow, M.Kawasaki, T.Onuma, S.F.Chichibu, H.K.Song, and H.Koinuma |
V-defect of ZnO thin films grown on Si as an ultraviolet optical path | Applied Physics Letters | 84, pp.502-504 |
APL
(pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
2003 -8 |
Y.-Z.Yoo, T.Chikyow, M.Kawasaki, T.Onuma, SF.Chichibu, and H.Koinuma |
Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111) | Japanese Journal of Applied Physics | 42, pp.7029-7032 |
JJAP
(pdf) |
2003 -7 |
T.Koyama, T.Onuma, and SF.Chichibu |
In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO | Applied Physics Letters | 83, pp.2973-2975 |
APL
(pdf) |
2003 -6 |
A.Tsukazaki,
A.Ohtomo, S.Yoshida, M.Kawasaki, C.H.Chia, T.Makino, Y.Segawa, T.Koida, S.F.Chichibu, and H.Koinuma |
Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer | Applied Physics Letters | 83, pp.2784-2786 |
APL
(pdf) |
2003 -5 |
K.Hazu, T.Sota,
K.Suzuki, S.Adachi, SF.Chichibu, G.Cantwell,
D.B.Eason,
D.C.Reynolds, and C.W.Litton |
Strong biexcitonic effects and exciton-exciton correlations in ZnO | Physical Review B | 62, 033205 |
PRB
(pdf) |
2003 -4 |
T.Azuhata,
M.Takesada, T.Yagi, A.Shikanai, SF.Chichibu,
K.Torii, A.Nakamura,
T.Sota, G.Cantwell, D.B.Eason, and C.W.Litton |
Brillouin scattering study of ZnO | Journal of Applied Physics | 94, pp.968-972 |
JAP
(pdf) |
2003 -3 |
A.Uedono,
T.Koida, A.Tsukazaki, M.Kawasakia, Z.Q.Chen,
SF.Chichibu, and H.Koinuma |
Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam | Journal of Applied Physics | 93, pp.2481-2485 |
JAP
(pdf) |
2003 -2 |
T.Koida, S.F.Chichibu, A.Uedono, A.Tsukazaki, M.Kawasaki, T.Sota, Y.Segawa, and H.Koinuma | Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO | Applied Physics Letter | 82, pp.532-534 |
APL
(pdf) |
2003 -1 |
SF.Chichibu, T.Sota,
G.Cantwell, D.B.Eason, and C.W.Litton |
Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal | Journal of Applied Physics | 93, pp.756-758 |
JAP
(pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
2002 -4 |
S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki | Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy | Japanese Journal of Applied Physics | 41, pp.L935-L937 |
JJAP
(pdf) |
2002 -3 |
S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki | Photoreflectance and
photoluminescence
of exciton-polaritons
in a ZnO epilayer grown on the a-face sapphire by radical-source molecular-beam-epitaxy |
Physica Status Solidi (a) |
192, pp.171-176 |
pss(a)
(pdf) |
2002 -2 |
S.F.Chichibu,
A.Tsukazaki, M.Kawasaki,
K.Tamura,
Y.Segawa, T.Sota, and H.Koinuma |
Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 substrate grown by laser molecular-beam-epitaxy | Applied Physics Letters | 80, pp.2860-2862 |
APL
(pdf) |
2002 -1 |
S.F.Chichibu, T.Yoshida, T.Onuma, and H.Nakanishi | Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates | Journal of Applied Physics | 91, pp.874-877 |
JAP
(pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
2001 | Y.-Z.Yoo, Y.Osaka,
T.Fukumura, Z.Jin,
M.Kawasaki,
H.Koinuma, T.Chikyow, P.Ahmet, A.Setoguchi, and S.F.Chichibu |
High temperature
growth of ZnS films on
bare Si
and transformation of ZnS to ZnO by thermal oxidation |
Applied Physics Letters | 78, pp.616-618 |
APL
(pdf) |
Year | Authors | Title | Journal | Vol., Page | Link |
1998 | K.Yamaya, Y.Yamaki, H.Nakanishi, and S.Chichibu | Use of a helicon-wave
excited plasma for aluminum-doped ZnO thin-film sputtering |
Applied Physics Letters | 72, pp.235-237 |
APL
(pdf) |
Year |
Authors | Title | Journal | Vol., Page | Link |
1997 | A.Kamata, H.Yoshida, S.Chichibu, and H.Nakanishi | Growth and Doping
Characteristics of ZnSeTe Epilayers by MOCVD |
Journal of Crystal Growth | 170, pp.518-522 |
JCG
(pdf) |
30. S. F. Chichibu and A. Uedono:
"Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.17 (2013), Symposium H: Smart Materials Design for Ultimate Functional Materials: Functional Core Concept, No.17p-M4-5 (Invited-oral).
29. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:
"Local structure study of Mg0.06Zn0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).
28. K. Hazu, T. Sota, S. Adachi, and S. F. Chichibu:
"Valence band ordering in ZnO identified using the four-wave-mixing technique",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.P14 (poster).
27. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:
"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).
26. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:
"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).
25. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizsu, A. Sasaki, T. Tanabe, A. Kamisawa
H. Amaike, T. Onuma, S. F. Chichibu, M. Nakano, T. Fukumura, A. Tsukazaki, A. Ohtomo, and M. Kawasaki:
"Molecular beam epitaxy of ZnO based heterostructures for advanced optoelectronic devices",
The 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, Sep. 21-24 (2008) (Invited-oral).
24. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),
No.AP24 (poster).
23. K. Hazu, T. Sota, S. Adach, and S. F. Chichibu:
"Dephasing dynamics of excitons and biexcitons in ZnO",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),
No.DP6 (poster).
22. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).
21. D.Takamizu, Y.Nishimoto, S.Akasaka, H.Yuji, K.Tamura, K. Nakahara, T.Tanabe, H.Takasu, M.Kawasaki, T.Onuma, and S.F.Chichibu:
"Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.M1 (Invited-oral).
20. K.Nakahara, H.Yuji, K.Tamura, S.Akasaka, A.Sasaki, Y.Nishimoto, D.Takamizu, T.Fujii, T.Tanabe, H.Takasu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki:
"Homoepitaxial MgZnO grown by molecular beam epitaxy toward ultraviolet light-emitting diodes"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008,
Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-17 (Invited-oral).
19. H.Yuji, K.Nakahara, K.Tamura, S.Akasaka, A.Sasaki, T.Tanabe, H.Takasu, T.Onuma, S.F.Chichibu, A.Tsukazaki, A.Ohtomo, and M.Kawasaki:
"MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy"
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2008,
Zinc Oxide Materials and Devices III Conference, Jan.20-23 (2008), No.6895-10 (oral).
18. S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:
"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).
17. M.Kubota, A.Tsukazaki, T.Onuma, A.Ohtomo, T.Sota, M.Kawasaki, and S.F.Chichibu:
16. S.F.Chichibu, N.Shibata, A.N.Fouda, T.Iijima, and T.Koyama:
"Effects of High-Temperature-Annealed self-Buffer layer (HITAB) insertion on the photoluminescence properties of Mg0.15Zn0.85O alloy films grown by laser-assisted molecular-beam epitaxy"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Poster I, No.P137 (poster).
"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).
15. S.F.Chichibu, N.Shibata, and T.Koyama:
"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).
14. A.Murayama, T.Imao, K.Saiki, H.Nakanishi, M.Sugiyama and S.F.Chichibu:
"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).
13. A.Tsukazaki, A.Ohtomo, M.Kawasaki, M.Kubota, T.Onuma, S.F.Chichibu, M.Sumiya, S.Fuke, T.Kita, K.Ohtani, Y.Ohno, H.Ohno, T.Makino, Y.Segawa and H.Koinuma:
"Advances in ZnO thin film growth by laser molecular-beam epitaxy"
MRS 2005 Fall Meeting, Nov 28- Dec 2 (2005), Boston, USA, Proc p. 727 (Invited-Oral).
12. S.F.Chichibu et al.:
"Defect studies of ZnO by time-resolved photoluminescence and positron annihilation spectroscopy"
The 2nd International Symposium on Point Defect and Nonstoichiometry (ISPN-2), Kaohsiung, Taiwan, Oct. 4-6, (2005) No. Th-B3-1 (Invited-oral).
11. N.Shibata, T.Ohmori, T.Koyama, T.Onuma, and S.F.Chichibu:
"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).
10. S.F.Chichibu, A.Tsukazaki, T.Onuma, A.Ohtomo, T.Sota, A.Uedono, and M.Kawasaki:
"Record long room-temperature spontaneous emission lifetime in ZnO epilayers grown by laser-assisted molecular beam epitaxy on ScAlMgO4 substrates using high-temperature-annealed self-buffer and proper defect management",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. O6 (oral).
9. A.Tsukazki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki:
"A homoepitaxial ZnO p-i-n light emitting diode"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 9, No.11:00 (oral).
8. T.Koyama, T.Ohmori, N.Shibata, T.Onuma, and S.F.Chichibu:
"Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).
7. S.F.Chichibu, T.Onuma, A.Tsukazaki, M.Kubota, A.Ohtomo, A.Uedono, Y.Segawa, T.Sota, and M.Kawasaki:
"Record long room-temperature photoluminescence lifetime in ZnO epilayers grown by laser-assisted MBE using appropriate defect management"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-29 (poster).
6. T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, and H.Koinuma:
"Reduction in the nonradiative defect density in ZnO films grown on Si substrates by the use of ZnS epitaxial buffer layers"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session 2, No.11:40 (oral)
5. A.Tsukazki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki:
"Electroluminescent ZnO p-i-n homostructural-junction"
11th International Workshop on Oxide Electronics (WOE11), Hakone, Japan, Oct, 3-5 (2004).
4. T.Koyama and S.F.Chichibu:
"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral&poster).
3. S.F.Chichibu, T.Sota, P.J.Fons, K.Iwata, A.Yamada, K.Matsubara, and S.Niki:
"Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam-epitaxy",
Fourth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2002), Cordoba, Spain, Mar.10-15, (2002), No.TuC6 (oral).
2. Y.Yamaki, K.Yamaya, H.Araya, H.Nakanishi, and S.Chichibu:
"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.
1. A.Kamata, H.Yoshida, S.Chichibu, and H.Nakanishi:
"Growth and Doping Characteristics of ZnSeTe Epilayers by MOCVD",
8th International Conference on Metal Organic Vapour Phase Epitaxy(ICMOVPE-8), Wales, England, Jun.9-13,1996. No. OOSP.7