last update : September 3, 2012
(a) Papers| Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
| 2012 -1 |
K.Hazu, T.Ohtomo, T.Nakayama, A.Tanaka, and S.F.Chichibu | Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN | Applied Physics Letters | 101, pp.072107 1-4 |
APL (pdf) |
| Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
| 2011 -2 |
A.Fouda, K.Hazu, T.Nakayama, A.Tanaka, and S.F.Chichibu | Helicon-wave-excited- plasma sputtering epitaxy of Nb-doped TiO2 films on GaN | Physica Status Solidi (c) | 8 (2), pp.534-536 |
pss(c) (pdf) |
| 2011 -1 |
A.Fouda, K.Hazu, M.Haemori, T.Nakayama, A.Tanaka, and S.F.Chichibu | Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering | Journal of Vacuum Science & Technology B | 29 (1), pp.011017 1-6 |
JVSTB (pdf) |
| Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
| 2010 -2 |
Y.Sawai, K.Hazu, and S.F.Chichibu | Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method | Journal of Applied Physics | 108, 063541 1-8 |
JAP (pdf) |
| 2010 -1 |
K.Hazu, A.Fouda T.Nakayama, A.Tanaka, and S.F.Chichibu | Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-doped TiO2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method | Applied Physics Express | 3 (9), pp.091102 1-3 |
APEX (pdf) |
| Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
| 2009 -4 |
T.Yamada,T.Miyanaga, T.Azuhata, T.Koyama, S.F.Chichibu, and Y.Kitajima | Local structure study of Mg0.06Zn0.94O film by polarized XAFS | e-Journal of Surface Science and Nanotechnology | 7, pp.596-600 |
ejssnt (pdf) |
| 2009 -3 |
H.Amaike, K.Hazu, Y.Sawai, and S.F.Chichibu | Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films | Applied Physics Express | 2 (10), pp.105503 1-3 |
APEX (pdf) |
| 2009 -2 |
S.Masaki, H.Nakanishi,
M.Sugiyama, and S.F.Chichibu |
Ga-doped ZnO transparent conducting films
prepared by helicon-wave-excited plasma sputtering |
Physica Status Solidi (c) |
6, 1109-1111 |
pss(c) (pdf) |
| 2009 -1 |
S.Takahata, K.Saiki, T.Imao,
H.Nakanishi, M.Sugiyama, and S.F.Chichibu |
Fabrication of a n-type ZnO / p-type Cu-Al-O heterojunction diode
by sputtering deposition methods |
Physica Status Solidi (c) |
6, 1105-1108 |
pss(c) (pdf) |
| Year |
Authors |
Title |
Journal |
Vol.,
Page |
Link |
| 2008 -2 |
S.Masaki,
H.Nakanishi,
M.Sugiyama, and S.F.Chichibu |
Preparation
of Ga doped ZnO thin films by helicon-wave-excited plasma sputtering |
Physica Status Solidi (c) | 5
(9), pp.3135-3137 |
pss(c) (pdf) |
| 2008 -1 |
S.Takahata,
T.Imao, H.Nakanishi,
M.Sugiyama, and S.F.Chichibu |
Helicon-wave-excited
plasma sputtering deposition of CuAlO2
thin films |
Physica Status Solidi (c) | 5
(9), pp.3101-3103 |
pss(c) (pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2007 -1 |
T.Koyama, A.N.Fouda,
N.Shibata, and S.F.Chichibu |
Effects of the high-temperature-annealed
self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates |
Journal of Applied Physics | 102, pp.073505 1-4 |
JAP
(pdf) |
| Year |
Authors | Title | Journal | Vol., Page | Link |
| 2006 -2 |
M.Sugiyama, A.Murayama,
T.Imao, K.Saiki, H.Nakanishi, and S.F.Chichibu |
Helicon-wave-excited Plasma Sputtering
Deposition of Ga-doped ZnO Transparent Conducting Films |
Physica Status Solidi (a) | 203 (11), pp.2882-2886 |
pss(a) (pdf) |
| 2006 -1 |
S.F.Chichibu, T.Ohmori,
N.Shibata, and T.Koyama |
Dielectric SiO2 /ZrO2
distributed Bragg reflectors for ZnO microcavities
prepared by the reactive helicon-wave-excited-plasma sputtering method |
Applied Physics Letters | 88, pp.161914 1-3 |
APL (pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2005 |
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma |
Fabrication of p-CuGaS2/n-ZnO:Al
heterojunction light-emitting diode grown by metalorganic vapor phase
epitaxy and helicon-wave-excited-plasma sputtering methods |
Journal of Physics and Chemistry of Solids |
66, pp.1868-1871 |
JPCS (pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2004 -3 |
S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama,
and T.Onuma |
Greenish-white electroluminescence from p-type CuGaS2
heterojunction diodes using n-type
ZnO as an
electron injector |
Applied Physics Letters |
85, pp.4403-4405 |
APL (pdf) |
| 2004 -2 |
T.Koyama, T.Ohmori,
N.Shibata, T.Onuma, and S.F.Chichibu |
In situ monitoring of Zn* and Mg*
species during helicon-wave-excited-plasma sputtering epitaxy of ZnO
and Mg0.06Zn0.94O films |
Journal of Vacuum Science & Technology B | 22, pp.2220-2225 |
JVSTB
(pdf) |
| 2004 -1 |
T.Koyama,
and S.F.Chichibu |
Importance of lattice-matching and surface
arrangement for the helicon-wave-excited-plasma sputtering epitaxy of
ZnO |
Journal of Applied Physics | 95, pp.7856-7861 |
JAP
(pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2003 |
T.Koyama, T.Onuma, and S.F.Chichibu |
In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO | Applied Physics Letters | 83, pp.2973-2975 |
APL
(pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 2002 |
S.F.Chichibu, T.Yoshida, T.Onuma, and H.Nakanishi | Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates | Journal of Applied Physics | 91, pp.874-877 |
JAP
(pdf) |
| Year | Authors | Title | Journal | Vol., Page | Link |
| 1998 | K.Yamaya, Y.Yamaki, H.Nakanishi, and S.F.Chichibu | Use of a helicon-wave
excited plasma for aluminum-doped ZnO thin-film sputtering |
Applied Physics Letters | 72, pp.235-237 |
APL
(pdf) |
21. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:
"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO2 / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).
20, K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).
19, K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO2 films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).
18. T. Yamada, T. Miyanaga, T. Azuhata, T. Koyama, S. F. Chichibu, and Y. Kitajima:
"Local structure study of Mg0.06Zn0.94O film by polarized XAFS",
The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), Tokyo, Japan, Nov. 9-13 (2008), No.10p-p-45 (poster).
17. S. F. Chichibu, A. N. Fouda T. Nakayama, A. Tanaka, and K. Hazu:
"Helicon-Wave-Excited-Plasma Sputtering Epitaxy of Nb-doped TiO2 films on GaN",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.WeD2-7 (oral).
16. A. N. Fouda, K. Hazu, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Deposition of Anatase Nb-doped TiO2 Thin Films on Glass Substrates by Helicon-Wave-Excited-Plasma Sputtering method",
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, May 31-Jun. 4 (2010), No.MoP48 (poster).
15. Y. Sawai, H. Amaike, K. Hazu, and S. F. Chichibu:
"Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.8.5 (oral).
14. Y. Sawai, H. Amaike, T. Onuma, K. Hazu, and S. F. Chichibu:
"Longitudinal-transverse splitting of A-excitons in ZnO homoepitaxial films grown by HWPSE method",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-2 (oral).
13. H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, and S. F. Chichibu:
"Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates",
The 5th International Workshop on ZnO and Related Materials, Michigan, USA, Sep. 22-24, (2008),
No.AP24 (poster).
12. S. Masaki, N. Obara, H. Kimura, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Preparation of Ga-doped ZnO transparent conducting films by helicon-wave-excited plasma sputtering",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.7 (oral).
11. S. Takahata, T. Imao, K. Saiki, H. Nakanishi, M. Sugiyama, and S. F. Chichibu:
"Helicon-wave-excited plasma sputtering and RF sputtering depositions of CuAlO2 thin films",
The 16th International Conference on Ternary and Multinary Compounds (ICTMC-16), Berlin, Germany, Sep. 15-19, (2008), No.11 (oral).
10. S.Masaki, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:
"Preparation of ZnO:Ga thin films by helicon-wave-excited plasma sputtering method"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. ThB II-4 (oral).
9. S.Takahata, T.Imao, H.Nakanishi, M.Sugiyama, and S.F.Chichibu:
"Helicon-wave-excited plasma sputtering deposition of CuAlO2 thin films"
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. Oxide semiconductors No. MoC P39 (poster).
8. S.F.Chichibu, N.Shibata, A.N.Fouda, T.Iijima, and T.Koyama:
"Exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire using high-temperature-annealed self-buffer layers"
The 4th International Workshop on ZnO and Related Materials, Giessen, Germany, Oct.3-6, (2006), Session I, No.Growth.I,3 (oral).
7. S.F.Chichibu, N.Shibata, and T.Koyama:
"Observation of exciton-polariton emissions in ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-face of sapphire using high-temperature-annealed ZnO self-buffer layer"
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B2.04 (oral).
6. A.Murayama, T.Imao, K.Saiki, H.Nakanishi, M.Sugiyama and S.F.Chichibu:
"Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application"
The 15th International Conference on Ternary and Multinary Compounds (ICTMC-15), Kyoto, Japan Mar. 6-10, (2006); No. Fri-O-3B (oral).
5. N.Shibata, T.Ohmori, T.Koyama, T.Onuma, and S.F.Chichibu:
"Growth of atomically-flat ZnO and related alloy films by helicon-wave-excited-plasma sputtering epitaxy method",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. EE5 (oral).
4. S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama and T.Onuma:
"Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods"
The 14th International Conference on Ternary and Multinary Compounds (ICTMC-14), Denver, CO, USA Sep.27-Oct.1, (2004), Session I: Growth of Multinary Compounds No.11:20 (oral).
3. T.Koyama, T.Ohmori, N.Shibata, T.Onuma and S.F.Chichibu:
"Atomically flat ZnO and MgxZn1-xO epitaxial films prepared by helicon-wave-excited-plasma sputtering epitaxy"
The 3rd International Workshop on ZnO and Related Materials, Sendai, Japan, Oct.5-8, (2004), Session P1-50 (poster).
2. T.Koyama and S.F.Chichibu:
"Effects of lattice-mismatch and surface arrangement on the epilayer qualities of ZnO grown by helicon-wave-excited-plasma sputtering epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NOVEL MATERIALS AND CHARACTERIZATION TECHNIQUES (2004) No.Tu1905 (oral&poster).
1. Y.Yamaki, K.Yamaya, H.Araya, H.Nakanishi and S.F.Chichibu:
"Preparation of Aluminium-Doped ZnO Films by Helicon-Wave Excited Plasma Sputtering",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Tu-09 (Oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1998)pp.48-51.