last update : August 29, 2014

182. S. F. Chichibu, K. Furusawa, K. Hazu, Y. Ishikawa, T. Onuma, T. Ohtomo, Y. Yamazaki, K. Kojima, H. Ikeda, and K. Fujito:
"Epitaxial growth of thick m-plane Al_1-xIn_xN epilayers exhibiting a dominant ultraviolet to green near-band-edge luminescence peak on a low defect density m-plane GaN substrate",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. WeGI21 (Invited-oral).

181. S. F. Chichibu, Y. Ishikawa, T. Ohtomo, K. Furusawa, A. Uedono, H. Miyake, K. Hiramatsu, S. Mita, J. Xie, R. Collazo, and Z. Sitar:
"Spatio-time-resolved cathodoluminescence studies on AlN and high AlN mole fraction Al_xGa_1-xN alloys",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Basic Physics and Characterization, No. WeBI13 (Invited-oral).

180. H. Sumiyoshi, Y. Kangawa, S. F. Chichibu, M. Knetzger, E. Meissner, Y. Iwasaki, and K. Kakimoto:
"Cathodoluminescence studies of AlN/AlN(0001) grown by solid source solution growth method ",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. TuGP57 (poster).

179. M. Saito, Q. Bao, D. Tomida, K. Furusawa, Y. Kagamitani, R. Kayano, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu:
"High Quality Bulk GaN Crystal Growth by Acidic Ammonothermal Method",
International Workshop on Nitride Semiconductors 2014 (IWN2014), Wrockaw, Poland, Aug. 24-29 (2014), Session Growth, No. MoG04 (oral).

178. S. F. Chichibu, Y. Ishikawa, and K. Furusawa:
"Spatio-time-resolved cathodoluminescence studies on wide bandgap wurtzite AlN and GaN",
International Conference on Metamaterials and Nanophysics (METANANO2014) , Varadero, Cuba, Apr.22-May.1 (2014), No. Thu 24.04.2014 10:00 (Invited-oral).

177. S. F. Chichibu, H. Miyake, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hiramatsu, and A. Uedono:
"Effects of Si-doping on the near-band- edge emission dynamics of Al_0.6Ga_0.4N epilayers grown on AlN templates by metalorganic vapor phase epitaxy",
The IUMRS International Conference in Asia 2013 (IUMRS-ICA-2013), Indian Isntitute of Science, Bangalore, India, Dec. 16-20 (2013), No. Invited Talk (4) (Invited-oral).

176. S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, and K. Furusawa:
"Spatio-time-resolved cathodoluminescence studies on group-III-nitride semiconductors",
The 2nd International Conference on Advanced Electromaterials (ICAE2013), ICC Jeju, Jeju, Korea, Nov. 12-15 (2013), Symposium 4: Advanced LED and Lighting Technology, No. LT-3356 (Invited-oral).

175. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Local carrier dynamics in and around the sub-surface stacking faults in GaN studied using spatio-time-resolved cathodoluminescence equipped with a front-excitation configuration femtosecond pulsed photoelectron gun",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.16-20 (2013), Symposium J, No.18p-M6-12 (oral).

174. S. F. Chichibu and A. Uedono:
"Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep.17 (2013), Symposium H: Smart Materials Design for Ultimate Functional Materials: Functional Core Concept, No.17p-M4-5 (Invited-oral).

173. D. Tomida, Q. Bao, M. Saito, Y. Kagamitani, K. Hazu, K. Qiao, T. Ishiguro, S. F. Chichibu, and C. Yokoyama:
"Effect of mineralizer species on the crystal growth of gallium nitride by the acidic ammonothermal method",
2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia, Doshisha University, Kyoto, Japan, Sep. 16-20 (2013), Symposium J, No.17a-M6-3 (Invited-oral).

172. T. Miyanaga, T. Azuhata, K. Nakajima, H. Nagoya, K. Hazu, and S. F. Chichibu:
"Polarized XAFS study of Al K-edge for m-plane AlGaN films",
Light and Particle Beams in Materials Science 2013 (LPBMS2013), Ibaraki, Japan, Aug.29-31 (2013), No.P023 (Poster).

171. M. Saito, Q. Bao, D. Tomida, K. Hazu, K. Furusawa, Y. Kagamitani, K. Qiao, T. Ishiguro, C. Yokoyama, and S. F. Chichibu:
"Effect of mineralizer species on the crystal growth of GaN in supercritical acidic ammonia",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.28 (2013), No.A6.09 (oral).

170. S. F. Chichibu, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, and T. Nakayama:
"Transport and emission properties of Nb-doped n++-type (001) anatase-TiO₂ / Mg-doped p-type (0001) GaN heteroepitaxial structures",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.BP2.15 (poster).

169. K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Local emission dynamics in and around the sub-surface basal-plane stacking faults in GaN studied by the spatio-time-resolved cathodoluminescence method using a front-excitation photoelectron gun",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.AP2.36 (poster).

168. S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Furusawa, K. Hazu, S. Mita, J. Xie, R. Collazo, and Z. Sitar:
"Spatio-time-resolved cathodoluminescence studies on AlN epitaxial films grown on low dislocation density bulk AlN substrates prepared by the physical vapor transport method",
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC, USA, Aug.27 (2013), No.C4.02 (oral).

167, S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Hazu, K. Furusawa, K. Hiramatsu, and A. Uedono:
"Effects of Si-doping on the recombination dynamics of excitons in AlGaN alloys studied by time-resolved cathodoluminescence",
European Materials Research Society, 2013 Spring Meeting, Session L: Group III nitrides, Congress Center, Strasbourg, France, May 29 (2013), No. L-91 (Invited-oral).

166, K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu:
"Spatio-time-resolved cathodoluminescence studies on local exciton dynamics of a freestanding GaN substrate grown by hydride vapor phase epitaxy",
The 40th International Symposium on Compound Semiconductors (ISCS 2013), Kobe, Japan, May 19-23 (2013), No. TuA1-4 (oral).

165, K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu:
"Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan, Oct.14-19 (2012), No. MoP-GR-54 (poster).

164, C. Yokoyama, Q. Bao, H. Sawayama, T. Hashimoto, F. Sato, K. Hazu, Y. Kagamitani, T. Ishinabe, M. Saito, R. Kayano, D. Tomida, K. Qiao, S. F. Chichibu, and T. Ishiguro:
"Powder synthesis and ammonothermal crystal growth of GaN using Ga metal as a starting material",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session GR1 (Bulk I), No. GR1-4 (oral).

163, K. Shimada, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada, and T. Sota:
"Electronic structure and spontaneous polarization in Sc_xAl_yGa_1-x-yN alloys lattice-matched to GaN: A first-principles study",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), No. TuP-PR-41 (poster).

162, K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO₂ / (0001) GaN heteroepitaxial structures",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session OD4 (UV-LED II / Physics), No. OD4-3 (oral).

161, S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono:
"Impacts of point defects on the photoluminescence lifetime of Si-doped Al_0.6Ga_0.4N epilayers grown on an AlN template",
International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan Oct.14-19 (2012), Session PR6 (Defects), No. PR6-2 (oral).

160, S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono:
"Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy",
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), Joint international meeting: 222nd Meeting of ECS, The Electrochemical Society and 2012 Fall Meeting of The Electrochemical Society of Japan, Session J3: Materials for Solid State Lighting, Hawaii Convention Center and the Hilton Hawaiian Village, Honolulu, Hawaii, USA, Oct. 7-12 (2012), No.J3-3956 (Invited-oral).

159, S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono:
"Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy",
The 39th International Symposium on Compound Semiconductors (ISCS 2012), Santa Barbara, CA, USA, Aug.27-30 (2012), No. We-2B.2 (oral).

158, S. F. Chichibu and A. Uedono:
"Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Th-1i (Invited-oral).

157, K. Hazu, Y. Ishikawa, M. Tashiro, H. Namita, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu:
"Time-resolved photoluminescence studies on HVPE freestanding GaN substrates exhibiting record-long positron diffusion length",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Mo-51p (poster).

156, C. Yokoyama, Q. Bao, S. F. Chichibu, T. Ishiguro, and K. Qiao:
"Powder synthesis of GaN using Ga metal as a starting material",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Mo-17p (poster).

155, K. Qiao, Q. Bao, S. F. Chichibu, T. Ishiguro, and C. Yokoyama:
"Ammonothermal crystal growth of GaN using an NH₄Br mineralizer",
The Fourth International Symposium on Growth of III-Nitrides (ISGN-4), St. Petersburg, Russia, Jul.16-19 (2012), No. Mo-13p (poster).

154, K. Hazu, A. N. Fouda, M. Haemori, T. Nakayama, A. Tanaka, and S. F. Chichibu:
"Crystal phase-selective epitaxy of rutile and anatase Nb-doped TiO₂ films on a GaN template by the helicon-wave-excited-plasma sputtering epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. B9.4 (oral).

153, S. F. Chichibu, T. Onuma, K. Hazu, T. Sota, and A. Uedono:
"Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. E3.4 (oral).

152, H. Matsumoto, K. Suzaki, K. Fujito, S. Nagao, M. Shigeiwa, Y. Ishikawa, K. Hazu, and S. F. Chichibu:
"Annealing effects of thick-GaN crystals",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. PA1.11 (poster).

151, S. F. Chichibu, K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, and T. Ishiguro:
"Ammonothermal growth of low oxygen concentration GaN using a dry acidic mineralizer and fabrication of an Al_0.2Ga_0.8N/GaN heterostructure",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. A3.2 (oral).

150, Y. Ishikawa, K. Hazu, H. Matsumoto, K. Suzaki, K. Fujito, S. Nagao, M. Shigeiwa, and S. F. Chichibu:
"Spatio-time-resolved cathodoluminescence study on a freestanding GaN substrate grown by halide vapor phase epitaxy",
The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, Jul.10-15 (2011), No. A2.5 (oral).

149, Y. Kagamitani, Q. Bao, S. F. Chichibu, K. Sugiyama, T. Fukuda, T. Ishiguro, and C. Yokoyama:
"GaN Growth by the Ammonothermal Method Using an Acidic Mineralizer",
The 5th Asian Conference on Crystal Growth and Crystal Technology (CGCT-5) - International Conference on Materials for Advanced Technologies (ICMAT-2011), International Convention and Exhibition Centre, Singapore, Jun.26 - Jul.1 (2011), No. EE5-9 (oral).

148, S. F. Chichibu, K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, and T. Ishiguro:
"Optical properties of GaN films and an AlGaN/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using gas-phase synthesized NH₄Cl mineralizer",
5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), Ise-Shima National Park, Toba, Mie, Japan, May 22-26 (2011) No. We-B4 (oral).

147. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys",
European Materials Research Society 2011 Spring Meeting (E-MRS2011), Nice, France, May9-13 (2011), No.F53 (Invited-oral).

146. K. Hazu, Y. Kagamitani, T. Onuma, D. Ehrentraut, T. Fukuda, T. Ishiguro, and S. F. Chichibu:
"Time-resolved photoluminescence of a two-dimensional electron gas in an Al_0.2Ga_0.8N/GaN heterostructure fabricated on GaN substrates grown by the ammonothermal method using acidic mineralizers",
European Materials Research Society 2011 Spring Meeting (E-MRS2011), Nice, France, May9-13 (2011), No.F24 (Oral).

145. A. Uedono, S. Ishibashi, S. F. Chichibu, and K. Akimoto:
"Point defects in GaN and related group-III nitrides studied by means of positron annihilation",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2011, OPTO, Gallium Nitride Materials and Devices VI, San Francisco, USA, Jan.22-27, (2011), No.7939-31 (Invited-oral); Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices VI, Edited by J.-I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, and E. Yoon, Vol. 7939, pp. 79390I 1-10 DOI: 10.1117/12.871611 (2011).

144. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Identification of extremely radiative nature of AlN by timeresolved photoluminescence and time-resolved cathodoluminescence measurements",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2011, OPTO, Gallium Nitride Materials and Devices VI, San Francisco, USA, Jan.22-27, (2011), No.7937-34 (Invited-oral).

143. S. F. Chichibu, K. Hazu, T. Onuma, T. Sota, and A. Uedono:
"Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.C4.2 (oral).

142. M. Kagaya, P. Corfdir, J. -D. Ganièl, B. Deveaud-Plédran, N. Garndjean, and S. F. Chichibu:
"Spatio-Time-Resolved Cathodoluminescence Studies on the m-plane In_0.05Ga_0.95N Epilayer Grown on a Freestanding GaN Substrate by Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.A2.9 (oral).

141. K. Hazu, Y. Kagamitani, T. Onuma, T. Ishiguro, T. Fukuda, and S. F. Chichibu:
"Optical Properties of GaN Crystals Grown by Ammonothermal Method Using Acidic Mineralizers and Homoepitaxial Films Grown by Metalorganic Vapor Phase Epitaxy",
International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep.19-24 (2010), No.B1.10 (oral).

140. A. Nagahira, D. Probert, T. Fukuda, S. F. Chichibu, Y. Kagamitani, and A. Abe:
"A new approach to technology roadmapping of disruptive innovation",
The R&D Management Conference - Information, imagination and intelligence in R&D management -, Manchester, UK, June 30-Jul. 2 (2010). (oral).

139. K. Hazu, M. Kagaya, T. Hoshi, T. Onuma, and S. F. Chichibu:
"Identification of cathodoluminescence peaks in m-plane Al_xGa_1-xN epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy",
The Third International Symposium on Growth of III-Nitrides (ISGN-3), Montpellier, France, Jul. 4-7 (2010), No.TU2-5 (oral).

138. S. F. Chichibu, Y. Kagamitani, K. Hazu, T. Onuma, T. Ishiguro, and T. Fukuda:
"Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy",
The Third International Symposium on Growth of III-Nitrides (ISGN-3), Montpellier, France, Jul. 4-7 (2010), No.MO2-4 (oral).

137. S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura:
"Impacts of point defects on the luminescence properties of (Al,Ga)N",
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2010, OPTO, Gallium Nitride Materials and Devices V, San Francisco, USA, Jan.25-28, (2010), No.7620-7 (Invited-oral).

136. 尾沼猛儀, 羽豆耕治, 宗田孝之, 上殿明良, 秩父重英
「AlNエピタキシャル薄膜における励起子発光機構」
電子情報通信学会 レーザ・量子エレクトロニクス研究会/電子デバイス研究会/電子部品・材料研究会2009年11月19-20日 No.(7)

135. T. Onuma, T. Yamada, H. Yamane, and S. F. Chichibu:
"Capability of the bulk GaN single crystals spontaneously nucleated by the Na-flux method as an homoepitaxial substrate",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.B4 (oral).

134. K. Hazu, T. Hoshi, M. Kagaya, T. Onuma, and S. F. Chichibu:
"Polarization properties of m-plane Al_xGa_1-xN films suffering from in-plane anisotropic stress",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.Z6 (oral).

133. T. Onuma, K. Hazu, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, and S. F. Chichibu:
"Time-resolved photoluminescence study of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.JJ3 (oral).

132. S. F. Chichibu, K. Hazu, T. Hoshi, M. Kagaya, and T. Onuma:
"Spatially-resolved cathodoluminescence study on m-plane Al_xGa_1-xN films grown on m-plane free-standing GaN substrates",
The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct.18-23 (2009), No.ThP41 (poster).

131. Y. Kagamitani, S. F. Chichibu, T. Onuma, K. Hazu, T. Fukuda, and T. Ishiguro:
"High purity GaN growth by the ammonothermal method using an acidic mineralizer",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.12.2 (oral).

130. T. Onuma, K. Hazu, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, and S. F. Chichibu:
"Time-resolved photoluminescence studies of excitons in AlN epilayers grown by metalorganic vapor phase epitaxy",
The 36th International Symposium on Compound Semiconductors (ISCS 2009), Santa Barbara, CA, USA, Aug.30-Sep.2 (2009), No.19.7 (oral).

129. T. Onuma, H. Yamaguchi, L. Zhao, M. Kubota, K. Okamoto, H. Ohta, and S. F. Chichibu:
"Optical Properties of m-plane (In,Ga)N Films Grown by Metalorganic Vapor Phase Epitaxy",
International Symposium of post-silicon materials and devices research alliance project, Osaka, Japan, Sep. 5-6 (2009), No.P-03 (poster).

128. K. Hazu, T. Hoshi, M. Kagaya, T. Onuma, K. Fujito, H. Namita, and S. F. Chichibu:
"Polarization properties of m-plane Al_xGa_1-xN films suffering from in-plane anisotropic stress",
9th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Lecce, Italy, Apr. 16-20 (2009), No. MoA1-1 (oral).

127. S. F. Chichibu:
"Growth issues and optical properties of nonpolar (Al,In,Ga)N films and quantum wells",
The 3rd Japan-Germany Joint Workshop on Nanoelectronics 2009, Kyoto, Japan, Jan.21-23 (2009), Session 1-1 (Invited-oral).

126. K. Hazu, T. Hoshi, K. Oshita, M. Kagaya, K. Fujito, H. Namita, T. Onuma, and S. F. Chichibu:
"Polarized and spatially-resolved cathodoluminescence studies of m-plane Al_xGa_1-xN films grown on low defect density free-standing GaN substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. We5-B1: Opto 1: Materials and physics (Invited-oral).

125. S. F. Chichibu, H. Yamaguchi, Lu Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta:
"Optical properties of nearly stacking-fault-free m-plane GaN and InGaN films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Plenary Mo-III3 (oral).

124. S. F. Chichibu, T. Onuma, T. Hashimoto, K. Fujito, F. Wu, J. S. Speck, and S. Nakamura:
"Impacts of dislocation bending and growth polar direction on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Mo1-P13: Substrates for nitride epitaxy (poster).

123. T. Onuma, K. Okamoto, H. Ohta, and S. F. Chichibu:
"Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers lased at 400 nm and 426 nm",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. We6-A5: Opto 2: Technology and devices (oral).

122. T. Hoshi, K. Oshita, M. Kagaya, K. Fujito, H. Namita, K. Hazu, T. Onuma, and S. F. Chichibu:
"Ammonia source molecular beam epitaxy of m-plane Al_xGa_1-xN films exhibiting negligible deep emission bands on low defect density free-standing GaN substrates",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland,
Oct.6-10 (2008), No. We2b-6: Challenging materials issues: AlN and high Al content alloys (oral).

121. T. Ishiguro, Y. Toda, S. Adachi, and S. F. Chichibu:
"Study on dephasing dynamics of exciton fine structures in GaN",
International Workshop on Nitride Semiconductors 2008 (IWN2008), Montreux, Switzerland, Oct.6-10 (2008), No. Th5-E4 : Opto 1: Materials and physics (oral).

120. S.F.Chichibu, T.Onuma, T.Hashimoto, K.Fujito, F.Wu, J.S.Speck, and S.Nakamura:
 "Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth"
The Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Izu, Japan, Jul. 6-9 (2008), No.Tu-55 (oral+poster).

119. S.F.Chichibu, H.Yamaguchi, L.Zhao, M.Kubota, T.Onuma, K.Okamoto, and H.Ohta:
"Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates"
The Second International Symposium on Growth of III-Nitrides (ISGN-2), Shuzenji, Izu, Japan, Jul. 6-9 (2008), No.Tu-9 (oral+poster).

118. T.Onuma, K.Okamoto, H.Ohta, and S.F.Chichibu:
"Optical gain in low dislocation density nonpolar m-plane InGaN/GaN MQW LD wafers"
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2007), No.BB2 (oral).

117. S.F.Chichibu, H.Yamaguchi, L.Zhao, M.Kubota, T.Onuma, K.Okamoto, and H.Ohta:
 "Optical properties of nearly stacking-fault-free m-plane (In,Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates"
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2008), No.AA1 (oral).

116. S.F.Chichibu, T.Onuma, T.Hashimoto, K.Fujito, F.Wu, J.S.Speck, and S.Nakamura:
 "Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth"
50th Electronic Materials Conference (EMC-50), University of California, Santa Barbara, California, USA, Jun.25-27 (2008), No.H4 (oral).

115. S.F.Chichibu, T.Onuma, and A.Uedono:
"Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N"
The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, Japan, May 21-24 (2008), No. A-23PM1-I-1-BB-1K (Keynote-oral).

114. T.Onuma, K.Kosaka, K.Asai, S.Sumiya, T.Shibata, M.Tanaka, T.Sota, A.Uedono, and S.F.Chichibu:
  "Exciton fine structures in AlN epilayers grown by metalorganic vapor phase epitaxy",
  7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.L1 (Invited-oral).

113. T.Onuma, H.Amaike, M.Kubota, K.Okamoto, H.Ohta, J.Ichihara,H.Takasu, and S.F.Chichibu:
 "Built-in and external bias-induced quantum-confined Stark effects in a nonpolar m-plane In_0.15Ga_0.85N/GaN multiple quantum well light-emitting diode",
7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, USA, Apr. 27-May 2 (2008), No.G1 (Invited-oral).

112. K.Okamoto, T.Tanaka, M.Kubota, S.F.Chichibu, and H.Ohta:
"Present status of LEDs and LDs based on m-plane Gallium Nitride",
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 8. GaN optical devices No. ThA II-1 (Invited-oral).

111. S.F.Chichibu, T.Koyama, M.Sugawara, T.Hoshi, J.F.Kaeding, R.Sharma, S.Nakamura, and A.Uedono:
"Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by NH3 source molecular beam epitaxy",
The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18 (2007), CATEGORY 7. GaN and related semiconductors No. WeA I-3 (oral).

110. S.F.Chichibu:
"Origin of defect-insensitive emission probability in (Al,In,Ga)N alloy films containing In",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.GG1 (Invited-oral).

109. J.Han, S.Chichibu, and H.Tang:
"III-Nitride Nanowires and Networks: Growth, Heterostructures, Epitaxial Alignment, and Applications",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.FF1 (Invited-oral).

108. K.Okamoto, H.Ohta, S.F.Chichibu, T.Tanaka, T.Tanabe, and H.Takasu:
"Progress of nonpolar m-plane InGaN/GaN laser diodes",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.CC1 (Invited-oral).

107. S.F.Chichibu, M.Kubota, H.Yamaguchi, L.Zhao, K.Okamoto, and H.Ohta:
"Homoepitaxial growth of nearly stacking-fault-free m-plane (In,Ga)N films by metalorganic vapor phase using low defect density free-standing substrates",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.W1 (oral).

106. T.Onuma, H.Amaike, M.Kubota, K.Okamoto, H.Ohta, J.Ichihara, H.Takasu, and S.F.Chichibu:
"Quantum-confined Stark effects in nonpolar m-plane InxGa1-xN/GaN multiple quantum well light-emitting diodes fabricated on low defect density free-standing substrates",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.U1 (oral).

105. T.Koyama, M.Sugawara, T.Hoshi, J.F.Kaeding, R.Sharma, S.Nakamura, A.Uedono, and S. F. Chichibu:
"Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by NH3 source molecular beam epitaxy",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), (poster).

104. T.Onuma, T.Koyama, K.Kosaka, K.Asai, S.Sumiya, T.Shibata, M.Tanaka, T.Sota, A.Uedono, and S.F.Chichibu:
"Observation of well-resolved bound, free, and higher order excitons in AlN epilayers grown by metalorganic vapor phase epitaxy",
The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, Nevada, USA, Sep.16-21 (2007), No.I4 (oral).

103. Q.Sun, S.-Y.Kwon, Z.Ren, J.Han, T.Onuma, and S.F.Chichibu:
"Microstructural Evolution in the Initial Growth Stage of m-Plane GaN on m-Plane SiC with a High-Temperature Grown AlN Buffer",
49th Electronic Materials Conference (EMC-49), University of Notre Dame, Indiana, USA, Jun.20-22 (2007), No.FF3 (oral).

102. S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck,
U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, and T.Sota:
"Raditive and nonradiative processes in (Al,In,Ga)N alloy films",
14th Semiconducting and Insulating Materials Conference (SIMC-XIV), Fayetteville, Arkansas, USA, May.15-20, (2007), No.W1222042 (Invited-oral).

101. J.Han, Z.Ren, T.Henry, Q.Sun, S.-Y.Kwon, Y.K.Song, A.V.Nurmikko, T.Onuma, S.F.Chichibu, and H.Tang:
"III-Nitride Nanowires: Growth, Heterostructures, Epitaxial Alignment, and Applications",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.We1330 (Invited-oral&poster).

100. T.Onuma, A.Chakraborty, M.McLaurin, B.A.Haskell, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, S.Nakamura, U.K.Mishra, T.Sota, and S.F.Chichibu:
"Impacts of morphological features of GaN templates on the In-incorporation efficiency in nonpolar m-plane In_xGa_1-xN / GaN multiple quantum wells",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Tu1115 (oral&poster).

99. S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, and T.Sota:
"Defect-insensitive emission probability universally seen in In-containing group-III nitride alloys",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Tu1030 (Invited-oral&poster).

98. T.Koyama, M.Sugawara, T.Hoshi, P.Cantu, J.F.Kaeding, R.Sharma, T.Onuma, S.Keller, U.K.Mishra, S.P.DenBaars, S.Nakamura, T.Sota, A.Uedono, and S.F.Chichibu:
"Relation between the near-band-edge emission intensity and structural defects in AlN epilayers",
34th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-34), Salt Lake City, Utah, USA, Jan.14-18, (2007) No.Mo1125 (oral&poster).

97. S.F.Chichibu, T.Koyama, T.Onuma, H.Masui, A.Chakraborty, B.A.Haskell, S.Keller, T.Sota, U.K.Mishra, J.S.Speck, S.Nakamura, and S.P.DenBaars:
"Recombination dynamics and in-plane polarization of the emission in an m-plane In_xGa_1-xN/GaN blue light-emitting-diode fabricated on the free-standing GaN substrate",
International Workshop on Nitride Semiconductors 2006 (IWN2006), Kyoto, Japan, Oct.22-27 (2006), No.WeOD3-2 (oral).

96. T.Ishiguro, Y.Toda, S.Adachi, K.Hazu, T.Sota, and S.F.Chichibu:
"Coherent manipulation of A and B excitons in GaN",
International Workshop on Nitride Semiconductors 2006 (IWN2006), Kyoto, Japan, Oct.22-27 (2006), No.TuP2-10 (poster).

95. S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, and T.Sota:
"Point defects and their influence on the luminescence efficiency in AlInGaN materials",
The IUMRS International Conference in Asia 2006 (IUMRS-ICA-2006), Hotel Shilla, Jeju, Korea, Sep. 10-14, (2006) No. 2-I-1 (Invited-oral).

94. S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, and T.Sota:
"Defect-insensitive emission probability in group-III nitride alloys containing In",
International Symposium on Compound Semiconductors 2006 (ISCS 2006), Vancouver, Canada, Aug.13-17 (2006) No. T7 (Invited-oral).

93. M.Kubota, A.Uedono, Y.Ishihara, T.Onuma, A.Usui, and S.F.Chichibu:
"Thermally stable semi-insulating properties of Fe-doped GaN grown by hydride vapor phase epitaxy characterized by photoluminescence and positron annihilation techniques",
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), Miyazaki, Japan, May 22-25, (2006), No.Fr-B1.5 (oral).

92. T.Onuma, H.Yamaguchi, T.Suzuki, T.Nozaka, and S.F.Chichibu:
"Cross-sectional spatially-resolved cathodoluminescence study of cubic GaN grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates",
The 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-13), Miyazaki, Japan, May 22-25, (2006), No.We-A1.1 (oral).

91. M.Sugawara, T.Koyama, J.F.Kaeding, R.Sharma, Y.Uchinuma, T.Araya, T.Onuma, S.Nakamura, and S.F.Chichibu: "Observation of a 208 nm emission at room temperature from AlN epilayers grown at high temperature by NH₃-source molecular-beam epitaxy on GaN templates using low-temperature interlayers",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.D3.03 (oral).

90. T.Onuma, S.Keller, S.P.DenBaars, J.S.Speck, S.Nakamura, U.K.Mishra, T.Sota, and S.F.Chichibu:
"Recombination dynamics of a 268 nm emission peak in strained Al_0.53In_0.11Ga_0.36N multiple quantum wells grown on AlGaN templates on (0001) Al₂O₃",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.P1.33 (poster).

89. T.Koyama, T.Onuma, H.Masui, A.Chakraborty, B.A.Haskell, U.K.Mishra, J.S.Speck, S.Nakamura, S.P.DenBaars, T.Sota, and S.F.Chichibu:
"Prospective emission efficiency and in-plane light polarization of nonpolar (1-100) In_xGa_1-xN / GaN blue  light-emitting-diodes fabricated on free-standing GaN substrates",
The 6th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2006), Montpellier, France, May.15-19, (2006), No.B1.05 (oral).

88. S.F.Chichibu, A.Uedono, T.Onuma, A.Chakraborty, B.A.Haskell, P.T.Fini, S.Keller, T.Sota, S.P.DenBaars, U.K.Mishra, J.S.Speck, and S.Nakamura:
"Relation between the point defect density and quantum efficiency in (Al,In,Ga)N studied by time-resolved photoluminescence and slow positron annihilation techniques: defect-resistant emission of localized excitons in InGaN",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Tu-OP2-4 (oral).

87. T.Onuma, A.Chakraborty, B.A.Haskell, S.Keller, T.Sota, U.K.Mishra, S.P.DenBaars, J.S.Speck, S.Nakamura, and S.F.Chichibu:
"Exciton dynamics in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Tu-P-103 (poster).

86. T.Koyama, M.Sugawara, Y.Uchinuma, J.F.Keading,　R.Sharma, T.Onuma, S.Nakamura, and S.FChichibu:
"Strain-relaxation in NH₃-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates",
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, Aug.28-Sept.2 (2005), No. Mo-P-033 (poster).

85. T.Onuma, A.Chakraborty, B.A.Haskell, S.Keller, T.Sota, S.P.DenBaars, J.S.Speck, S.Nakamura, U.K.Mishra, and S.F.Chichibu: "Recombination dynamics in nonpolar (11-20) In_xGa_1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. LL3 (oral).

84. T.Hashimoto, K.Fujito, F.Wu, B.A.Haskell, T.Onuma, S.F.Chichibu, J.S.Speck, and S.Nakamura:
"Characterization of GaN films grown on free-standing GaN seeds by ammonothermal growth",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. CC1 (oral).

83. J.Su, M.Gherasimova, G.Cui, J.Han, C.Broadbridge, A.Lehman, T.Onuma, S.F.Chichibu, Y.He, and A.V.Nurmikko:
"Epitaxially aligned GaN nanowires and nanobridges by MOCVD",
47th Electronic Materials Conference (EMC-47), Santa Barbara, California, USA, Jun.22-24 (2005), No. Q7 (oral).

82. Y.Uchinuma, M.Sugawara, T.Koyama, J.F.Keading, R.Sharma, T.Onuma, S.Nakamura, and S.F.Chichibu:
"Atomically-flat AlN epitaxial layers grown on MOVPE GaN templates by NH₃-source molecular-beam epitaxy"
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), Bozeman, Montana, USA, Jan.23-27, SESSION: Wide Bandgap Semiconductors (2005) No.We1505 (oral&poster).

81. T.Onuma, A.Chakraborty, B.A.Haskell, S.Keller, T.Sota, U.K.Mishra, S.P.DenBaars, J.S.Speck, S.Nakamura, and S.F.Chichibu: "Emission mechanisms in nonpolar (11-20) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth"
32nd Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-32), Bozeman, Montana, USA, Jan.23-27, SESSION: Wide Bandgap Semiconductors (2005) No.We1455 (oral&poster).

80. S.F.Chichibu, A.Uedono, T.Onuma, T.Koida, M.Sugiyama, B.A.Haskell, M.Sumiya, H.Okumura, T.Sota, J.S.Speck, S.P.DenBaars, and S.Nakamura:
"Direct comparison of defect density and photoluminescence lifetime in polar and nonpolar wurtzite and zincblende GaN studied by time-resolved photoluminescence and slow positron annihilation techniques"
International Workshop on Nitride Semiconductors 2004 (IWN2004), Pittsburg, USA, Jul.19-23, (2004), No.A10.3 (Oral).

79. T.Koida, S.F.Chichibu, T.Sota, M.D.Craven, B.A.Haskell, J.S.Speck, S.P.DenBaars, and S.Nakamura:
"Reduction of bound-state and nonradiative defect densities in nonpolar (11-20) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique"
International Workshop on Nitride Semiconductors 2004 (IWN2004), Pittsburg, USA, Jul.19-23, (2004), No.A10.5 (Oral).

78. T.Nosaka, M.Sugiyama, T.Suzuki, T.Koida, K.Nakajima, T.Aoyama, M.Sumiya, T.Chikyow, A.Uedono, and S.F.Chichibu:
"Reduction of point defect in cubic GaN epilayers on (001) GaAs substrates using Al_xGa_1-xN/GaN superlattice underlayers"
The 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-12), Lahaina, Maui, Hawai, May 30-June 4, (2004), Wide Gap Nitrides No.31 (poster).

77. T.Koida, S.F.Chichibu, Y.Uchinuma, J.Kikuchi, K.R.Wang, M. Terazaki, T. Onuma, J. F. Keading, R. Sharma, and S. Nakamura:
"Reduction of surface crevice density in GaN homoepitaxial layers grown by NH₃-source molecular beam epitaxy"
31th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-31), Kailua-Kona, Hawaii, USA, Jan.18-22, SESSION: NITRIDE GROWTH AND INTERFACES (2004) No.We0920 (oral&poster).

76. SF.Chichibu, T.Onuma, T.Koida, T.Kitamura, K.Nakajima, P.Ahmet, T.Aoyama, T.Chikyow, Y.Ishida, T.Sota, S.P.DenBaars, S.Nakamura, and H.Okumura:
"Recombination dynamics of localized excitons in cubic In_xGa_1-xN / GaN multiple quantum wells on 3C-SiC (001) substrates grown by rf-MBE"
combined with
SF.Chichibu, T.Onuma, T.Sota, S.Yamaguchi, S.Kamiyama, H.Amano, and I.Akasaki:
"Recombination dynamics of localized excitons in Al_1-xIn_xN epitaxial films grown by metalorganic vapor phase epitaxy",
International Conference on Materials for Advanced Technologies (ICMAT-2003), Singapore, Dec. 7-12, (2003), No. H-4-1-I (Invited-oral).

75. T.Shibata, M.Tanaka, K.Asai, S.Sumiya, M.Sakai, H.Katsukawa, O.Oda, H.Miake, K.Hiramatsu, H.Ishikawa, T.Egawa, T.Jimbo, and S.Chichibu:
"High-Quality AlN Epitaxial Films Grown using MOVPE and Their Applications",
Materials Research Society, 2003 Fall Meeting, Session Y: GaN and Related Alloys, Boston, MA, USA, Dec.1-5, (2003), No.Y3.6 (Invited-oral).

74. T.Nagata, P.Ahmet, T.Onuma, T.Koida, S.F.Chichibu, and T.Chikyow:
"Position Controlled GaN Nano-Structures Fabricated by Low Energy Focused Ion Beam System",
Materials Research Society, 2003 Fall Meeting, Session R: Radiation Effects and Ion Beam Processing of Materials, Boston, MA, USA, Dec.1-5, (2003) No.R9.39 (poster).

73. S.P.Lepkowski, T.Suski, H.Teisseyre, P.Perlin, T.Kitamura, Y.Ishida, H.Okumura, T.Onuma, T.Koida, and SF.Chichibu:
"Nonlinear elastic properties of cubic InGaN",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Th-B9.2 (oral).

72. T.Onuma, SF.Chichibu, Y.Uchinuma, T.Sota, S.Yamaguchi, S.Kamiyama, H.Amano, and I.Akasaki:
"Bandgap bowing and emission mechanisms in AI_1-xIn_xN epitaxial films grown by metalorganic vapor phase epitaxy",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.We-A6.6 (oral).

71. T.Onuma, T.Koida, P.Cantu, J.F.Keading, S.Keller, T.Sota, S.P.DenBaars, U.K.Mishra, S.Nakamura, and S.F.Chichibu:
"Emission mechanisms in AI_xGa_1-xN films grown on sapphire (0001) substrates by low-pressure metalorganic vapor phase epitaxy",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Tu-P2.039 (poster).

70. A.Uedono, SF.Chichibu, M.Sumiya, R.Suzuki, T.Ohdaira, T.Mikado, and T.Mukai:
"Vacancy-type defects in GaN grown along different polar directions by MOVPE probed using monoenergetic positron beams",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.089 (poster).

69. T.Onuma, SF.Chichibu, T.Kitamura, K.Nakajima, P.Ahmet, T.Aoyama, T.
Chikyow, Y.Ishida, T.Sota, S.P.DenBaars, S.Nakamura, and H.Okumura:
"Recombination dynamics of localized excitons in cubic InxGa1-xN/GaN quantum wells grown on 3C-SiC (001) substrates by rf-MBE",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.067 (poster).

68. T.Onuma, Y.Uchinuma, E.-K.Suh, H.J.Lee, T.Sota, and SF.Chichibu:
 "Carrier dynamics in InGaN/GaN quantum wells with composition-graded walls"
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.066 (poster).

67. S.Adachi, K.Hazu, T.Sota, S.F.Chichibu, S.Muto, K.Suzuki, and T.Mukai:
"Exciton-exciton correlation effects on FWM in GaN",
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Mo-P1.053 (poster).

66. M.Sugiyama, T.Nosaka, K.Nakajima, P.Ahmet, T.Aoyama, T.Chikyow, and SF.Chichibu:
"Effects of deposition parameters of low-temperature GaN buffer layer on the structural and optical properties of cubic GaN epilayers on GaAs (001) substrates grown by MOVPE"
The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 25-30 (2003), No.Tu-P2.016 (poster).

65. S.F.Chichibu, A.Uedono, T.Onuma, T.Sota, P.Cantu, T.M.Katona, J.F.Keading, S.Keller, U.K.Mishra, S.Nakamura, and S.P.DenBaars:
"Recombination Dynamics in Strain-free Al_xGa_1-xN Alloys Studied by Time-Resolved Photoluminescence and Slow Positron Annihilation Techniques",
Materials Research Society, 2003 Fall Meeting, Session Y: GaN and Related Alloys, Boston, MA, USA, Dec.1-5, (2003), No.Y6.9 (oral).

64. SF.Chichibu, T.Onuma, T.Kitamura, Y.Ishida, T.Sota, S.P.DenBaars, S.Nakamura, and H.Okumura:
"Recombination dynamics of localized excitons in cubic In_xGa_1-xN/GaN multiple quantum wells grown by rf-MBE on 3C-SiC substrate",
30th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-30), Salt Lake City, Utah, USA, Jan.19-23, SESSION: III-NITRIDES (2003) No.Mo1415 (oral&poster).

63. T.Suski, H.Teisseyre, S.P.Lepkowski, P.Perlin, T.Kitamura, Y.Ishida, H.Okumura, and S.F.Chichibu:
"Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells",
International Workshop on Nitride Semiconductors 2002 (IWN2002), Aachen, Germany, Jul.22-25, (2002), No.P3-354(poster).
Physica Status Solidi (b) 234 (3), pp.759-763 (2002).

62. T.Suski, H.Teisseyre, S.P.Lepkowski, P.Perlin, H.Mariette, T.Kitamura, Y.Ishida, H.Okumura, and SF.Chichibu:
"Light Emission Versus Energy Gap in Group-III Nitrides. Hydrostatic Pressure Studies",
10th International Conference on High Pressure in Semiconductor Physics, Surrey, August, 5-8, (2002). (Invited-Oral);
Physica Status Solidi (b) 235 (2), pp.225-231 (2003).

61. S.F.Chichibu, T.Onuma, T.Kitamura, T.Sota, S.P.DenBaars, S.Nakamura, and H.Okumura:
"Recombination dynamics of localized excitons in cubic phase In_xGa_1-xN/GaN multiple quantum
 wells on 3C-SiC/Si (001)",
International Workshop on Nitride Semiconductors 2002 (IWN2002), Aachen, Germany, Jul.22-25, (2002), No.A06-046(oral).

60. T.Suski, P.Perlin, S.P.Lepkowski, H.Teisseyre, I.Gorczyca, P.Prystawko, M.Leszczynski, N.Grandjean, J.Massies, T.Kitamura, Y.Ishida, S.F.Chichibu, and H.Okumura:
"Piezoelectric Field and its influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA, USA, Nov.26-Nov.30, (2001) No. (Oral);
Materials Research Society Symposium Proceedings Series Vol.693, pp.487-499 (2002).

59. T.Onuma, S.F.Chichibu, T.Sota, K.Asai, S.Sumiya, T.Shibata, and M. Tanaka:
"Exciton Spectra of AlN Epitaxial Films",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA,
USA, Nov.26-Nov.30, (2001) No.I8.6 (Oral);
Materials Research Society Symposium Proceedings Series Vol.693, pp.515-520 (2002).

58. S.F.Chichibu, M.Sugiyama, T.Onuma, T.Kuroda, A.Tackeuchi, T.Sota, T.Kitamura, H.Nakanishi, Y.Ishida, H.Okumura, S.Keller, S.P.DenBaars, U.K.Mishra, and S.Nakamura:
"Similarities in the Optical Properties of hexagonal and cubic InGaN Quantum Wells",
Materials Research Society, 2001 Fall Meeting, Session I: GaN and Related Alloys, Boston, MA, USA, Nov.26-Nov.30, (2001) No.I7.5 (Oral);
Materials Research Society Symposium Proceedings Series Vol.693, pp.481-486 (2002).

57. S.F.Chichibu, M.Sugiyama, T.Azuhata, T.Kuroda, A.Tackeuchi, T.Sota, T.Kitamura,
Y.Ishida, H.Okumura, H.Nakanishi, T.Mukai, S.P.DenBaars, S.Nakamura,
"OPTICAL AND STRUCTURAL STUDIES IN WURTZITE AND ZINCBLENDE InGaN QUANTUM WELL STRUCTURES",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, USA,
Jul.16-20 (2001), No. A13.5 (oral).

56. T.Kitamura, Y.Suzuki, Y.Ishida1, X.-Q.Shen, H.Nakanishi, S.F.Chichibu, M.Shimizu, and H.Okumura,
"Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver,  Colorado, USA, Jul.16-20 (2001), No. P4.31 (poster).
Physica Status Solidi (2001) (submitted).

55. T.Kitamura, Y.Ishida, X.-Q.Shen, H.Nakanishi, S.F.Chichibu, M.Shimizu, and  H.Okumura,
"Achievement of two-dimensional electron gas at cubic GaN/AlN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy",
The 4th International Conference on Nitride Semiconductors (ICNS-4), Denver, Colorado, USA, Jul.16-20 (2001), No. A2.2 (oral). Physica Status Solidi (2001) (submitted).

54. S.F.Chichibu, T.Azuhata, H.Okumura, A.Tackeuchi, T.Sota and T.Mukai:
"Localized exciton dynamics in InGaN quantum well structures",
8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8),
Sapporo, Hokkaido, Japan, Jun. 10-15 (2001), No. Fr2-2 (Invited-oral).
Applied Surface Science (in press).

53. S.F.Chichibu, T.Azuhata, M.Sugiyama, T.Kitamura, Y.Ishida, H.Okumura, H.Nakanishi, T.Sota, T.Mukai, and S.Nakamura:
"Optical and structural studies in InGaN quantum well structure laser diodes",
28th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-28), Orlando, Florida, USA, Jan. 7-11 (2001), No.Mo0905 (Invited).

52. M.Sumiya, K.Mizuno, M.Furuwasa, M.Yoshimoto, S.Chichibu, and S.Nakamura:
"STRUCTURAL ANALYSIS IN REAL SPACE OF INxGAxN SINGLE QUANTUM WELLS BY COAXIAL IMPACT IONIZATION SCATTERING SPECTROSCOPY",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G11.43  (Poster)

51. A.Setoguchi,  K.Yoshimura, M.Sumiya, A.Uedono, and S.F.Chichibu :
"IMPACT OF THE GROWTH POLAR DIRECTION ON THE EMISSION MECHANISMS OF GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G11.6 (Poster); Materials Research Society Symposium Proceedings Series Vol.639, pp.G.11.6.1-6 (2001).

50. S.F.Chichibu, T.Sota, and S.Nakamura:
"ROLE OF LOCALIZED QUANTUM WELL EXCITONS IN InGaN QUANTUM WELL STRUCTURE CORRELATED WITH MICROSTRUCTURAL ANALYSIS",
Materials Research Society, 2000 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.27-Dec.1, (2000) No.G9.3 (Oral); Materials Research Society Symposium Proceedings Series Vol.639, pp.G.9.3.1-6 (2001).

49. Y.Ito, T.Mita, N.Yamamoto, S.F.Chichibu, and S.P.DenBaars:
"Cathodoluminescence characterization of defects in GaN using a transmission electron microscope"
Proceedings of 6th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (Fukuoka, Japan) p.10 (2000).

48. T.Kitamura, S.H.Cho, Y.Ishida, T.Ide, X.Q.Shen, H.Nakanishi, S.F.Chichibu, and H.Okumura:
"Growth and characterization of cubic InGaN/GaN multiquantum wells on 3C-SiC by RF MBE"
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, WA-1-6 (oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp. 93-96 (2000).

47. M.Sumiya, S.F.Chichibu, K.Mizuno, M.Furusawa, M.Yoshimoto, and S.Nakamura:
"Correlation between Electroluminescence and Disordering of Indium in In_xGa_1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TA-2-6(oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp.575-578 (2000).

46. K.Torii, S.F.Chichibu, T.Deguchi, H.Nakanishi, T.Sota, and S.Nakamura:
"Photoreflectance spectra of excitonic polaritons in wurtzite GaN",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TA-1-4 (oral). Institute of Pure and Applied Physics Conference Series Vol.1, pp.548-551 (2000).

45. S.F.Chichibu, T.Azuhata, T.Sota, T.Mukai, and S.Nakamura:
"Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes",
International Workshop on Nitride Semiconductors 2000 (IWN2000), Nagoya, Japan, Sep.24-27, 2000, TM-2-5 (oral); Institute of Pure and Applied Physics Conference Series Vol.1, pp.528-531 (2000).

44. T.Kitamura, S.H.Cho, Y.Ishida, T.Ide, X.Q.Shen, H.Nakanishi, S.Chichibu, and H.Okumura:
"Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE",
Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, Sept.10-15 (2000).

43. S.F.Chichibu, T.Sota, K.Wada, O.Brandt, K.H.Ploog, S.P.DenBaars, and S.Nakamura:
"Impacts of internal electric field and localization of quantum well excitons in AlGaN/GaN/InGaN light emitting diodes",
International workshop on Physics of light-Matter Coupling in Nitrides, Saint-Nectaire, Clearmont-Ferrand, France, Oct.8-12, (2000) No.W-5 (Invited-oral).

42. S.F.Chichibu, A.Setoguchi, T.Azuhata, T.Deguchi, T.Sota, and S.Nakamura:
"Efficient emission against the internal piezoelectric field of InGaN/GaN/AlGaN single-quantum-well amber light-emitting diodes",
42th Electronic Materials Conference (EMC-42), Session C, Polarization and Piezoelectric Effects in Nitrides, Denver, Colorado, USA, Jun.21-Jun.23, 2000, No.C5 (oral).

41. S.F.Chichibu, A.Setoguchi, T.Azuhata, J.Mullhauser, M.Sugiyama, T.Mizutani, T.Deguchi, H.Nakanishi, T.Sota, O.Brandt, K.H.Ploog, T.Mukai, and S.Nakamura:
"Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction",
International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000), Berlin, Germany, Mar.6-10, 2000, No.ThC1 (oral).

40. S.Chichibu, T.Deguchi, A.Setoguchi, M.Sugiyama, H.Nakanishi, T.Sota, T. Mukai and S.Nakamura: "Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells", International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep.21-24, 1999, C-4-1, (oral) Extended Abstracts of SSDM'99 pp.198-199 (1999).

39. S.F.Chichibu, A.Shikanai, T.Deguchi, A.Setoguchi, R.Nakai, K.Wada, S.P. DenBaars, T.Sota, T.Mukai, and S.Nakamura:
"Comparison of optical properties in GaN and InGaN quantum well structures",
International Symposium on Photonics and Applications (ISPA'99), Design, Fabrication, and Characterization of Photonic Devices, Singapore, sponsered by SPIE, Nov.29-Dec.3, 1999, (oral) ; Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Vol. 3896, pp. 98-106,(1999).

38. H.Marchand, J.P.Ibbetson, P.T.Fini, S.Chichibu, S.J.Rosner, S.Keller, S.P.DenBaars. J.S.Speck, and U.K.Mishra:
"Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition",
The 25th International Symposium on Compound Semiconductors, Nara, Japan, Oct.12-16, 1998 (poster). Proceedings of the 25th International Symposium on Compound Semiconductors, edited by H.Hirayama (IOP Publishing Co., Toyko, 1999); Institute of Physics Conference Series No.162, Chapter 12 pp.681-686

37. T.Deguchi, K.Sekiguchi, A.Nakamura, T.Sota, R.Matsuo, S.Chichibu, and S.Nakamura:
"Quantum-Confined Stark Effect in an AlGaN/GaN Single Quantum Well Structure",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9, 1999, No. Tu_P081 (poster).

36. H.Okumura, T.Koizumi, Y.Ishida, H.Yaguchi, S.Yoshida, and S.Chichibu:
"Optical Characterization of Cubic AlGaN Epilayers by Cathodoluminescence and Spectroscopic Ellipsometry",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9, 1999, No. Tu_P048 (poster).

35. S.F.Chichibu, T.Deguchi, T.Sota, S.P.DenBaars, and S.Nakamura:
"Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9,1999, No. Tu_14 (oral).

34. S.Keller, S.B.Fleischer, S.F.Chichibu, J.E.Bowers, U.K.Mishra, and S.P.DenBaars:
"Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells",
The 3rd International Conference on Nitride Semiconductors (ICNS3), Montpellier, France, Jul.5-9,1999, No. Mo_04 (oral).

33. S.F.Chichibu, T.Deguchi, T.Sota, S.P.DenBaars, and S.Nakamura:
"Behavior of quantum well excitons under internal fields of GaN/AlGaN and InGaN/GaN/AlGaN quantum well structures",
41th Electronic Materials Conference (EMC-41), Session R (Wide-band-gap III-V Materials (GaN, AlN, AlGaN): Growth, Processing, Characterization, Theory, and Devices), Santa Barbara, USA, Jun.30-Jul.2, 1999 (oral).

32. S.Keller, S.F.Chichibu, M.Minski, E.Hu, U.Mishra, and S.DenBaars:
"Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells",
The 9th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), La Jolla, California, USA, May 30-Jun.4, 1998 (oral).

31.S.Chichibu, T.Sota, K.Wada, S.P.DenBaars, and S.Nakamura:
"Spectroscopic studies in InGaN quantum wells",
Materials Research Society, 1998 Fall Meeting, Session G: GaN and Related Alloys, Boston, MA, USA, Nov.30-Dec.4, 1998, No. G2.7 (Invited).

30. Marchand, J.P.Ibbetson, P.T.Fini, S.Chichibu, S.J.Rosner, S.Keller, S.P.DenBaars. J.S.Speck, and U.K.Mishra:
"Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition",
The 25th International Symposium on Compound Semiconductors, Nara, Japan, Oct.12-16, 1998 (poster).

29. S.Chichibu, L.Sugiura, J.Nishio, A.Setoguchi, H.Nakanishi, and K.Itaya:
"Effective Bandgap Separation in InGaN Epilayers Grown by Metalorganic Chemical Vapor Deposition",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P45 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo, 1998) pp.616-619.

28. S.Chichibu, H.Marchand, S.Keller, P.Fini, J.Ibbetson, M.Minsky, S.Fleischer, J.Speck, J.Bowers, E.Hu, U.Mishra, S.DenBaars, T,Deguchi, T.Sota, and S.Nakamura:
"Exciton Localization in InGaN Quantum Wells Grown on Lateral Epitaxially Overgrown (LEO) GaN",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-P42 (poster): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo,1998) pp.604-607.

27. S.Chichibu, D.Cohen, M.Mack, A.Abare, P.Kozodoy, M. Minsky, S.Fleischer, S.Keller, J.Bowers, U.Mishra, L.Coldren, D.Clarke, and S.DenBaars:
"Improved Properties of InGaN Multiple Quantum Well Purplish-Blue Laser Diodes by Si-Doping in the InGaN Barriers",
The 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Sep.29-Oct.2,1998, Th-03 (oral): Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd., Tokyo, 1998) pp.381-384.

26. S.Chichibu, A.Abare, M.Mack, M.Minsky, T.Deguchi, D.Cohen, P.Kozodoy, S.Fleischer, S.Keller, J.Speck, J.E.Bowers, E.Hu, U.K.Mishra, L.A.Coldren, S.P.DenBaars, K.Wada, T.Sota, and S.Nakamura:
"Optical properties of InGaN quantum wells"
European Materials Research Society, 1998 Spring Meeting, Session L: III-V Nitrides, Strasbourg, France, Jun.16-19, 1998, No. L-IV.1 (Invited-oral).

25. S.Chichibu, T.Deguchi, T.Sota, K.Wada, and S.Nakamura:
"Exciton localization in InGaN quantum well devices",
25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25), Salt Lake City, Utah, USA, Jan.18-22, 1998, SESSION: III-NITRIDES No.Mo1030 (Invited-oral&poster).

24. S.Chichibu, T.Deguchi, T.Sota, K.Wada, and S.Nakamura:
"LOCALIZED EXCITONS IN InGaN",
Materials Research Society, 1997 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.1-5, 1997, No. D12.1 (Invited-oral). Materials Research Society Symposium Proceedings Series Vol.482,p.613-624.

23. T.Deguchi, A.Shikanai, T.Sota, S.Chichibu, and S.Nakamura:
"Gain Spectroscopy of Continuous Wave InGaN Multi-Quantum Well Laser Diodes with Different Degree of Compositional Fluctuation",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, S-8(oral).

22. M.Arita, S.Chichibu, H.Nakanishi, T.Deguchi, T.Azuhata, T.Sota, and S.Nakamura:
"Exciton-Phonon Interaction in Wurtzite GaN Epilayers",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Th1-6(oral).

21. H.Hamaguchi, G.Feuillet, H.Okumura, Y.Ishida, S.Chichibu, H.Nakanishi, and S.Yoshida:
"Surface Reconstructions of Cubic GaN on 3C-SiC and GaAs",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-55(poster).

20. M.Sugiyama, S.Chichibu, A.Shikanai, T.Azuhata, T.Sota, H.Amano, and I.Akasaki:
"Photoreflectance and Photoluminescence Spectra of Tensile-Strained Wurtzite GaN Epilayers",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-33(poster).

19. T.Deguchi, T.Azuhata, T.Sota, S.Chichibu, and S.Nakamura:
"Optical Absorption Coefficient in Wurtzite GaN",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P2-32(poster).

18. S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura:
"Bright Emissions due to Recombination of Localized Excitons in InGaN Bulk and Quantum Well Devices",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu3-2(oral).

17. H.Okumura, H.Hamaguchi, T.Koizumi, K.Balakrishnan, Y.Ishida, M.Arita, S.Chichibu, H.Nakanishi, T.Nagamoto, and S.Yoshida:
"Growth of Cubic III-nitrides by Gas Source MBE Using Atomic Nitrogen Plasma : GaN, AlGaN and AlN",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu1-3(oral) .

16. K.Iwata, H.Asahi, K.Asami, A.Ishida, R.Kuroiwa, H.Tampo, S.Gonda, and S.Chichibu:
"Promising characteristics of GaN layers grown on amorphous silica substrates by gas source MBE",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, Tu1-2(oral).

15. S.Chichibu, K.Wada, M.Arita, T.Sota, and S.Nakamura:
"Monochromated Cathodeluminescence Mapping of InGaN Single Quantum Wells",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P1-LN-11(late news-poster).

14. H.Okumura, K.Balakrishnan, H.Hamaguchi, T.Koizumi, S.Chichibu, H.Nakanishi, T.Nagamoto, and S.Yoshida:
"Analysis of MBE Growth Mode for GaN Epilayers by RHEED",
The 2nd International Conference on Nitride Semiconductors (ICNS'97), Tokushima, Japan, Oct.27-31, 1997, P1-50(poster).

13. S.Yoshida, H.Okumura, Y.Ishida, K.Balakrishnan, H.Hamaguchi, S.Chichibu, and H.Nakanishi:
"MBE GROWTH MONITORING OF CUBIC AND HEXAGONAL GaN BY SURFACE RECONSTRUCTION",
The 4th IUMRS International Conference in Asia, Makuhari, Japan, Sept.16-18, 1997.

12. S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura:
"Localized Excitons in InGaN Quantum Wells",
16th Electronic Materials Symposium, Minou, Japan, Jul.9-11 (1997). Session H10, pp.219-222.

11. S.Chichibu, A.Shikanai, T.Azuhata, T.Sota, A.Kuramata, K.Horino, and S.Nakamura:
"Biaxial Strain Effect on the Exciton Resonance Energies of h-GaN Heteroepitaxial Layers Grown by MOVPE",
15th Electronic Materials Symposium, Izu-Nagaoka, Japan, Jul.10-12 (1996). Session C20, pp.77-80.

10. H.Okumura, H.Hamaguchi, K.Ohta, G.Feuillet, K.Barakrishnan, Y.Ishida, S.Chichibu, H.Nakanishi, T.Nagamoto, and S.Yoshida:
"Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers",
International Conference on Silicon Carbide, III - Nitrides and Related Materials 1997.

9. T.Deguchi, T.Azuhata, T.Sota, S.Chichibu, and S.Nakamura:
"GAIN SPECTRA IN CW InGaN/GaN LASER DIODES",
European Materials Research Society, 1997 Spring Meeting, Session L: ‡V-‡X Nitrides, Strasbourg, France, Jun.16-20, 1997, No. L-XIII-3 (Invited).

8. T.Deguchi, T.Azuhata, T.Sota, S.Chichibu, N.Sarukura, H.Ohtake, T.Yamanaka, and S.Nakamura:
"NANOSECOND PUMP-AND-PROBE STUDY OF WURTZITE GaN"
European Materials Research Society, 1997 Spring Meeting, Session L: III-V Nitrides, Strasbourg, France, Jun.16-20, 1997, No. L-V-2 (Invited).

7. T.Azuhata, T.Sota, S.Chichibu, A.Kuramata, K.Horino, M.Yamaguchi, T.Yagi, and S.Nakamura:
"VALENCE BAND PHYSICS IN WURTZITE GaN",
Materials Research Society, 1997 Spring Meeting, Session D: Gallium Nitride and Related Materials, San Francisco, CA, USA, Mar.31-Apr.3, 1997, No. D5.3 (Invited). Materials Research Society Symposium Proceedings Series

6. H.Okumura, K.Balakrishnan, G.Feuillet, Y.Ishida, S.Yoshida, K.Ohta, H.Hamaguchi, and S.Chichibu:
"STRUCTURAL AND OPTICAL CHARACTERIZATION OF HIGH-QUALITY CUBIC GaN EPILAYERS GROWN ON GaAs AND 3C-SiC SUBSTRATES BY GAS SOURCE MBE USING RHEED IN-SITU MONITORING",
Materials Research Society, 1996 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.2-6, 1996, No. N3.31. Materials Research Society Symposium Proceedings Series
     Vol.449,p.435-440.

5. S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura:
"RECOMBINATION OF LOCALIZED EXCITONS IN InGaN SINGLE- AND MULTI-QUANTUM WELL STRUCTURES",
Materials Research Society, 1996 Fall Meeting, Session N: ‡V-‡X Nitrides, Boston, MA, USA, Dec.2-6, 1996, No. N1.7. Materials Research Society Symposium Proceedings Series Vol.449,p.653-658.

4. S.Chichibu, H.Okumura, G.Feuillet, S.Nakamura, and S.Yoshida:
"Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films",
International Conference on Solid State Devices and Materials, Yokohama, Japan, Aug.26-29, 1996, C-2-3, Extended Abstract pp.227-229.

3. S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura:
"Localized excitons in InGaN single- and multi-quantum well structures",
38th Electronic Materials Conference (EMC-38), Session W (Optical and Electrical Characterization of III-V nitrides), Late News W10, Santa Barbara, USA, Jun.26-28,1996.

2. S.Chichibu, A.Shikanai, T.Azuhata, T.Sota, A.Kuramata, K.Horino, and S.Nakamura:
"Exciton Structures in h-GaN Heteroepitaxial Layers Grown on Sapphire Substrates by MOCVD",
38th Electronic Materials Conference (EMC-38), Session W (Optical and Electrical Characterization of III-V nitrides), W2, Santa Barbara, USA, Jun.26-28,1996.

1. S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura:
"Contribution of Excitons in the Photoluminescence Spectra of h-GaN Epitaxial Layers Grown on Sapphire Substrates by TF-MOCVD",
International Symposium on Blue Laser and Light Emitting Diodes, Chiba, Japan, Mar. 5-7,1996. We-19: Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes (Ohmsha Ltd, Tokyo, 1996) pp.202-205.