Paper List

発表論文及び国際学会Proceedingリスト

目次

◆ 窒化物半導体 (Al,Ga,In)N に関する報告

◆ II -VI族化合物半導体 (ZnO, ZnSe) に関する報告

◆ ヘリコン波励起プラズマスパッタ法に関する報告

◆ ワイドバンドギャップ銅カルコパイライト型化合物半導体 Cu(Al,Ga)(S,Se)₂に関する報告

◆ 次世代高効率太陽電池材料CIGS系 (CuInGaSe₂) 半導体に関する報告

◆ III -V族化合物半導体 (GaAs, InP) に関する報告

◆ その他の材料 (Si, SiC, β-FeSi₂, 金属酸化物等) に関する報告

主要論文のcitation数データ (ISI Web of Knowledge V5.14)　　(総引用回数 10912) (個人h-index 48、第1機関としてのh-index 39)

(1) 秩父研究室が1stAuthorの論文


Rank	Times Cited	Title, Journal
1.	929	S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura: "Spontaneous emission of localized excitons in InGaN single and multi-quantum well structures", Applied Physics Letters 69 (27), pp.4188-4190 (1996).
2.	344	S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura: "Luminescences from localized states in InGaN epilayers", Applied Physics Letters 70 (21), pp.2822-2824 (1997).
3.	307	S.Chichibu, K.Wada, and S.Nakamura: "Spatially-resolved cathodoluminescence spectra of InGaN quantum wells", Applied Physics Letters 71 (16), pp.2346-2348 (1997).
4.	287	S.F.Chichibu, A.C.Abare, M.S.Minsky, S.Keller, S.B.Fleischer, J.E.Bowers, E.Hu, U.K. Mishra, L.A.Coldren, S.P.DenBaars, and T.Sota: "Effective bandgap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures", Applied Physics Letters 73 (14), pp.2006-2008 (1998).
5.	281	S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, and T.Sota: "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors", Nature Materials 5 (10), pp.810-816 (2006).
6.	196	S.Chichibu, T.Sota, K.Wada, and S.Nakamura: "Exciton localization in InGaN quantum well devices", Journal of Vacuum Science and Technology B 16 (4), pp.2204-2214 (1998).
7.	142	T.Koida, SF.Chichibu, A.Uedono, A.Tsukazaki, M.Kawasaki, T.Sota, Y.Segawa, and H.Koinuma: "Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO", Applied Physics Letters 82 (4), pp.532-534 (2003).
8.	138	S.Chichibu, T.Azuhata, T.Sota, and S.Nakamura: "Excitonic emissions from hexagonal GaN epitaxial layers", Journal of Applied Physics 79 (5), pp.2784-2786 (1996).
9.	137	S.F.Chichibu, H.Marchand, M.S.Minski, S.Keller, P.T.Fini, J.P.Ibbetson, S.B.Fleischer, J.S.Speck, J.E.Bowers, E.Hu, U.K.Mishra, S.P.DenBaars, T.Deguchi, T.Sota, and S.Nakamura: "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied Physics Letters 74 (10), pp.1460-1462 (1999).
10.	110	S.Chichibu, A.Abare, M.Mack, M.Minsky, T.Deguchi, D.Cohen, P.Kozodoy, S.Fleischer, S.Keller, J.Speck, J.E.Bowers, E.Hu, U.K.Mishra, L.A.Coldren, S.P.DenBaars, K.Wada, T.Sota, and S.Nakamura: "Optical properties of InGaN quantum wells", Materials Science and Engineering B 59, pp.298-306 (1999).

(2)共同研究先が1stAuthorの論文


Rank	Times Cited	Title, Journal
1.	1308	A.Tsukazaki, A.Ohtomo, T.Onuma, M.Ohtani, T.Makino, M.Sumiya, K.Ohtani, S.F.Chichibu, S.Fuke, Y.Segawa, H.Ohno, H.Koinuma, and M.Kawasaki: "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO", Nature Materials 4 (1), pp.42-46 (2005).
2.	284	A.Tsukazaki, M.Kubota, A.Ohtomo, T.Onuma, K.Ohtani, H.Ohno, S.F.Chichibu, and M.Kawasaki: "Blue light-emitting diode based on ZnO", Japanese Journal of Applied Physics 44, Part 2, pp.L643-L645 (2005).
3.	212	A.Shikanai, T.Azuhata, T.Sota, S.Chichibu, A.Kuramata, K.Horino, and S.Nakamura: "Biaxial strain dependence of exciton resonance energies in wurtzite GaN", Journal of Applied Physics 81 (1), pp.417-424 (1997).
4.	143	H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, and S. Yoshida: "Growth and Characterization of cubic GaN", Journal of Crystal Growth 178 (1-2), pp.113-133 (1997).
5.	114	K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu: "Continuous-Wave Operation of m-plane InGaN Multiple Quantum Well Laser Diodes", Japanese Journal of Applied Physics 46, Part 2 (9), pp. L187-L189 (2007).
6.	112	J. S. Speck and S. F. Chichibu: "Nonpolar and Semipolar Group III Nitride-Based Materials", MRS Bulletin 34 (5), pp.304-309 (2009).
7.	111	T.Deguchi, K.Sekiguchi, A.Nakamura, T.Sota, R.Matsuo, S.Chichibu, and S.Nakamura: "Quatum-confined Stark effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure", Japanese Journal of Applied Physics 38, Part 2 (8B), pp. L914-L916 (1999).

(3) 参考(著書)


Rank	Times Cited	Book Title
1.	351	S. Nakamura and S. F. Chichibu: "Introduction to Nitride Semiconductor Blue Lasers and Light emitting Diodes", (Taylor and Francis, London and New York, 2000) ISBN 0-7484-0836-3.

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Last update 10/31/2014