2015/11/08-13 ISGN-6 (The 6th International Symposium on Growth of III-Nitrides) @ Act City Hamamatsu
ISGN-6に参加しました
| 講演番号 | 発表者 | タイトル |
|---|---|---|
| No.Tu-A28 | M. Saito (oral+poster) | High Quality Bulk GaN Crystal Grown by Acidic Ammonothermal Method |
| No.Tu-B19 | K. Kojima (oral+poster) | Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate |
| No.I-We-B2 | K. Kojima (Upgraded Invited-oral) | Low resistivity m-plane freestanding GaN substrate with very low point defect concentration grown by hydride vapor phase epitaxy on an ammonothermal GaN seed crystal |
| No.We-A43 | S. F. Chichibu (oral+poster) | Metalorganic vapor phase epitaxy and time-resolved luminescence studies of pseudomorphic m-plane Al1-xInxN epitaxial films on a low defect density m-plane GaN substrate |
| No.We-B43 | K. Shimada (oral+poster) | First-principles calculations of structural, elastic, and piezoelectric properties in wurtzite InxAl1-xN |
会場にて記念撮影
関係者の皆様ありがとうございました。